SCHEMBL13004841

SCHEMBL13004841

Sc1ccc(C23CC4CC(CC(C4)C2)C3)c2ccccc12

nearest known ligand 0.42

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
ALDH1A1 P00352 4/20 0.35
LMNA P02545 2/20 0.35
GRIN2D O15399 1/20 0.34
GRIN3B O60391 1/20 0.34
GRIN1 Q05586 1/20 0.34
GRIN2A Q12879 1/20 0.34
GRIN2B Q13224 1/20 0.34
GRIN2C Q14957 1/20 0.34
GRIN3A Q8TCU5 1/20 0.34
MEN1 O00255 3/20 0.33
KMT2A Q03164 3/20 0.33
KDM4E B2RXH2 2/20 0.33
HTT P42858 1/20 0.33
HSD11B1 P28845 1/20 0.33
POLB P06746 1/20 0.33
GAA P10253 1/20 0.33
GFER P55789 1/20 0.33
RARB P10826 2/20 0.32
RARG P13631 2/20 0.32
HPGD P15428 2/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL13004831 0.84
SCHEMBL13004825 0.80 SLC6A4 (0.30)
SCHEMBL26006724 0.79 ALDH1A1 (0.35) ALDH1A1LMNAGRIN2DGRIN3BGRIN1
SCHEMBL13004762 0.79 MEN1 (0.47) ALDH1A1MEN1KMT2AKDM4EHTT
SCHEMBL25709690 0.79 ALDH1A1 (0.35) ALDH1A1LMNAGRIN2DGRIN3BGRIN1
SCHEMBL3043614 0.74 SLC6A3 (0.41) ALDH1A1LMNAGRIN2DGRIN3BGRIN1
Phosphine SCHEMBL28240146 0.73 SLC6A3 (0.41) ALDH1A1LMNAGRIN2DGRIN3BGRIN1
SCHEMBL13148555 0.72 ALDH1A1 (0.31) ALDH1A1LMNAGRIN2DGRIN3BGRIN1
SCHEMBL13148557 0.72 GRIN2D (0.33) ALDH1A1LMNAGRIN2DGRIN3BGRIN1
SCHEMBL22815277 0.72 MEN1 (0.49) ALDH1A1GRIN2DGRIN3BGRIN1GRIN2A

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 2 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20100316950-A1 COMPOSITION FOR FORMING BASE FILM FOR LITHOGRAPHY AND METHOD FOR FORMING MULTILAYER RESIST PATTERN MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2010-12-16 US disclosed
US-20100316950-A1 COMPOSITION FOR FORMING BASE FILM FOR LITHOGRAPHY AND METHOD FOR FORMING MULTILAYER RESIST PATTERN MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2010-12-16 US disclosed