SCHEMBL13027276

SCHEMBL13027276

COc1cc(OC)c(C[Si](OC)(OC)OC)c(OC)c1

nearest known ligand 0.48

Predicted protein targets (top 18)

geneUniProtsupporting neighboursconfidence
▸ ALDH1A1 P00352 3/20 0.40
▸ CA12 O43570 1/20 0.40
▸ CA1 P00915 1/20 0.40
▸ CA2 P00918 1/20 0.40
▸ CA7 P43166 1/20 0.40
▸ CA9 Q16790 1/20 0.40
▸ CA14 Q9ULX7 1/20 0.40
▸ CYP1A2 P05177 3/20 0.38
▸ PTPN1 P18031 1/20 0.37
▸ CYP3A4 P08684 3/20 0.37
▸ APLNR P35414 1/20 0.36
▸ CYP1A1 P04798 1/20 0.35
▸ CYP1B1 Q16678 1/20 0.35
▸ USP2 O75604 1/20 0.35
▸ MAPK1 P28482 1/20 0.35
▸ SMN1; SMN2 Q16637 1/20 0.35
▸ ERN1 O75460 1/20 0.35
▸ DHFR P00374 1/20 0.35

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL13027266 0.89 NQO2 (0.36) ALDH1A1CA12CA1CA2CA7
SCHEMBL13027285 0.83 ACHE (0.46) ALDH1A1CYP3A4USP2MAPK1SMN1; SMN2
SCHEMBL13027356 0.82 CA1 (0.36) ALDH1A1CA12CA1CA2CA7
SCHEMBL13027456 0.82 CYP1A2 (0.41) ALDH1A1CA12CA1CA2CA7
SCHEMBL13027271 0.79 ALDH1A1 (0.40) ALDH1A1PTPN1CYP3A4CYP1A1CYP1B1
SCHEMBL13027291 0.77 CYP1A2 (0.57) CA9CYP1A2CYP3A4APLNRCYP1A1
SCHEMBL13027262 0.77 CYP1A2 (0.41) ALDH1A1CA12CA1CA2CA7
SCHEMBL13027274 0.77 CA1 (0.44) ALDH1A1CA12CA1CA2CA7
SCHEMBL15672343 0.76 CYP1A2 (0.37) ALDH1A1CA12CA1CA2CA7
SCHEMBL900593 0.76 ALDH1A1 (0.46) ALDH1A1CA12CA1CA2CA7

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 2 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8697330-B2 Composition for forming a silicon-containing antireflection film, substrate having the silicon-containing antireflection film from the composition and patterning process using the same SHIN-ETSU CHEMICAL CO., LTD. (JP) 2014-04-15 — — US disclosed
US-20100285407-A1 Composition for forming a silicon-containing antireflection film, substrate having the silicon-containing antireflection film from the composition and patterning process using the same SHIN-ETSU CHEMICAL CO., LTD. (JP) 2010-11-11 — — US disclosed
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