SCHEMBL13027274

SCHEMBL13027274

COc1cccc(OC)c1C[Si](OC)(OC)OC

nearest known ligand 0.47

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
▸ CA1 P00915 4/20 0.44
▸ CA2 P00918 4/20 0.44
▸ CA7 P43166 3/20 0.44
▸ CA9 Q16790 3/20 0.44
▸ CA12 O43570 2/20 0.44
▸ CA14 Q9ULX7 2/20 0.44
▸ CA4 P22748 1/20 0.44
▸ SMN1; SMN2 Q16637 1/20 0.42
▸ ALDH1A1 P00352 3/20 0.40
▸ TP53 P04637 2/20 0.40
▸ KDM4E B2RXH2 2/20 0.40
▸ MAPK1 P28482 2/20 0.40
▸ LMNA P02545 1/20 0.40
▸ CYP3A4 P08684 1/20 0.40
▸ MAPT P10636 1/20 0.40
▸ HPGD P15428 1/20 0.40
▸ ALOX15 P16050 1/20 0.40
▸ ALOX12 P18054 1/20 0.40
▸ HSD17B10 Q99714 1/20 0.40
▸ MCHR1 Q99705 1/20 0.40

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL13027251 0.88 CA12 (0.38) CA1CA2CA7CA9CA12
SCHEMBL13027755 0.85 SMN1; SMN2 (0.39) CA1CA2CA7CA9CA12
SCHEMBL13027354 0.82 CA1 (0.39) CA1CA2CA7CA9CA12
SCHEMBL13027460 0.81 CA1 (0.42) CA1CA2CA7CA9CA12
SCHEMBL13027260 0.79 ACHE (0.34) CA2SMN1; SMN2ALDH1A1KDM4ELMNA
SCHEMBL13027275 0.79 ALDH1A1 (0.37) SMN1; SMN2ALDH1A1KDM4EMAPK1MAPT
SCHEMBL1972978 0.77 IDO1 (0.52) CA1CA2CA7CA9CA12
SCHEMBL13027276 0.77 ALDH1A1 (0.40) CA1CA2CA7CA9CA12
SCHEMBL13027285 0.77 ACHE (0.46) SMN1; SMN2ALDH1A1MAPK1CYP3A4MAPT
SCHEMBL13027218 0.76 IDO1 (0.39) CA1CA2CA7CA9CA12

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 2 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8697330-B2 Composition for forming a silicon-containing antireflection film, substrate having the silicon-containing antireflection film from the composition and patterning process using the same SHIN-ETSU CHEMICAL CO., LTD. (JP) 2014-04-15 — — US disclosed
US-20100285407-A1 Composition for forming a silicon-containing antireflection film, substrate having the silicon-containing antireflection film from the composition and patterning process using the same SHIN-ETSU CHEMICAL CO., LTD. (JP) 2010-11-11 — — US disclosed
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