Predicted protein targets (top 6)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | AGXT | P21549 | 1/20 | 0.33 |
| ▸ | ALDH1A1 | P00352 | 1/20 | 0.31 |
| ▸ | LMNA | P02545 | 1/20 | 0.31 |
| ▸ | MAPT | P10636 | 1/20 | 0.31 |
| ▸ | PDCD1LG2 | Q9BQ51 | 1/20 | 0.30 |
| ▸ | CD274 | Q9NZQ7 | 1/20 | 0.30 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL13027476 | 0.87 | AOC3 (0.37) | ALDH1A1LMNAMAPT | |
| SCHEMBL15672402 | 0.87 | AGXT (0.30) | AGXTPDCD1LG2CD274 | |
| SCHEMBL13027423 | 0.86 | AOC3 (0.33) | AGXTALDH1A1LMNAMAPT | |
| SCHEMBL13027382 | 0.85 | PDCD1LG2 (0.31) | ALDH1A1PDCD1LG2CD274 | |
| SCHEMBL13027524 | 0.84 | — | — | |
| SCHEMBL13027241 | 0.84 | AGXT (0.34) | AGXTALDH1A1LMNAMAPT | |
| SCHEMBL13027413 | 0.81 | — | — | |
| SCHEMBL15672396 | 0.80 | MEN1 (0.46) | ALDH1A1LMNAMAPT | |
| SCHEMBL13027421 | 0.79 | SCN8A (0.36) | ALDH1A1LMNAMAPT | |
| SCHEMBL15672392 | 0.77 | ALDH1A1 (0.33) | ALDH1A1LMNAMAPT |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 2 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-8697330-B2 | Composition for forming a silicon-containing antireflection film, substrate having the silicon-containing antireflection film from the composition and patterning process using the same | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2014-04-15 | — | — | US | disclosed |
| US-20100285407-A1 | Composition for forming a silicon-containing antireflection film, substrate having the silicon-containing antireflection film from the composition and patterning process using the same | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2010-11-11 | — | — | US | disclosed |