SCHEMBL1304206

SCHEMBL1304206

CCC(CC)C(=O)CC(=O)O.[Cu]

nearest known ligand 0.42

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
USP2 O75604 1/20 0.42
TSHR P16473 1/20 0.42
LDHA P00338 1/20 0.40
SRR Q9GZT4 1/20 0.40
CA2 P00918 5/20 0.39
MAPK1 P28482 1/20 0.39
FFAR3 O14843 2/20 0.38
SLC1A3 P43003 1/20 0.38
SLC1A2 P43004 1/20 0.38
SLC1A1 P43005 1/20 0.38
CA1 P00915 4/20 0.35
HDAC1 Q13547 2/20 0.35
HDAC2 Q92769 2/20 0.35
CHRM1 P11229 1/20 0.35
AKR1A1 P14550 1/20 0.35
CHRM3 P20309 1/20 0.35
HTR2A P28223 1/20 0.35
HTR2C P28335 1/20 0.35
ADRA1A P35348 1/20 0.35
HRH1 P35367 1/20 0.35

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL2021291 0.97 USP2 (0.44) USP2TSHRLDHASRRCA2
Acetic Acid SCHEMBL8992551 0.92 TSHR (0.41) USP2TSHRLDHASRRCA2
SCHEMBL21378830 0.84 ALDH1A1 (0.42) USP2TSHRLDHASRRCA2
SCHEMBL287783 0.83 HDAC1 (0.52) USP2TSHRLDHASRRCA2
SCHEMBL14285857 0.83 USP2 (0.50) USP2TSHRCA2MAPK1SLC1A3
Potassium SCHEMBL31652342 0.83 USP2 (0.50) USP2TSHRCA2MAPK1SLC1A3
Malonic Acid SCHEMBL28607314 0.82 LDHA (0.45) USP2TSHRLDHASRRCA2
SCHEMBL28141545 0.81 SLC1A3 (0.41) USP2TSHRCA2SLC1A3SLC1A2
SCHEMBL21066713 0.81 USP2 (0.33) USP2TSHRCA2MAPK1SLC1A3
SCHEMBL28886256 0.78 CA2 (0.55) CA2MAPK1SLC1A2SLC1A1CA1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8053029-B2 Method for fabricating CuInS2 thin film by metal organic chemical vapor deposition, CuInS2 thin film fabricated by the same and method for fabricating In2S3 thin film therefrom SAMSUNG SDI CO., LTD. (KR) 2011-11-08 US claimed
US-20080012015-A1 METHOD FOR FABRICATING CuInS2 THIN FILM BY METAL ORGANIC CHEMICAL VAPOR DEPOSITION, CuInS2 THIN FILM FABRICATED BY THE SAME AND METHOD FOR FABRICATING In2S3 THIN FILM THEREFROM SAMSUNG ELECTRONICS CO., LTD. (KR) 2008-01-17 US claimed
US-8053029-B2 Method for fabricating CuInS2 thin film by metal organic chemical vapor deposition, CuInS2 thin film fabricated by the same and method for fabricating In2S3 thin film therefrom SAMSUNG SDI CO., LTD. (KR) 2011-11-08 US disclosed
US-20080012015-A1 METHOD FOR FABRICATING CuInS2 THIN FILM BY METAL ORGANIC CHEMICAL VAPOR DEPOSITION, CuInS2 THIN FILM FABRICATED BY THE SAME AND METHOD FOR FABRICATING In2S3 THIN FILM THEREFROM SAMSUNG ELECTRONICS CO., LTD. (KR) 2008-01-17 US disclosed