SCHEMBL1305047

SCHEMBL1305047

NC(=S)N(CCN1CCOCC1)C1CCCCC1

nearest known ligand 0.45

Predicted protein targets (top 15)

geneUniProtsupporting neighboursconfidence
ALDH1A1 P00352 7/20 0.42
DUSP3 P51452 2/20 0.42
KDM4E B2RXH2 1/20 0.42
PTPN11 Q06124 1/20 0.42
PYGL P06737 1/20 0.39
L3MBTL1 Q9Y468 1/20 0.39
CYP1A2 P05177 1/20 0.38
EPHX1 P07099 1/20 0.37
GAA P10253 1/20 0.37
HPGD P15428 1/20 0.36
SMN1; SMN2 Q16637 1/20 0.36
CA12 O43570 1/20 0.36
CA1 P00915 1/20 0.36
CA2 P00918 1/20 0.36
CA9 Q16790 1/20 0.36

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL6539146 0.72 PHGDH (0.36) ALDH1A1PYGLCYP1A2GAASMN1; SMN2
SCHEMBL15259538 0.69 PHGDH (0.40) ALDH1A1CYP1A2GAA
SCHEMBL21548998 0.69 SIGMAR1 (0.40) ALDH1A1KDM4EL3MBTL1SMN1; SMN2
SCHEMBL20879993 0.68 EPHX1 (0.43) ALDH1A1EPHX1GAASMN1; SMN2
SCHEMBL27837836 0.68 SIGMAR1 (0.42) PYGLL3MBTL1GAASMN1; SMN2CA2
SCHEMBL6074931 0.67 SIGMAR1 (0.41) ALDH1A1PYGLCYP1A2GAA
SCHEMBL28647785 0.67 ALDH1A1 (0.46) ALDH1A1
SCHEMBL16440026 0.66 HSD17B10 (0.42) ALDH1A1KDM4EL3MBTL1EPHX1GAA
SCHEMBL13045318 0.66 KEAP1 (0.51) ALDH1A1CYP1A2EPHX1GAASMN1; SMN2
SCHEMBL13046530 0.66 KEAP1 (0.51) ALDH1A1CYP1A2EPHX1GAASMN1; SMN2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 118 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-4210089-A1 METHOD FOR MANUFACTURING ORGANIC LAYER PATTERN, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE FUJIFILM Corporation (JP) 2023-07-12 EP disclosed
CN-115244470-A Removing liquid, kit and semiconductor device 富士胶片株式会社 2022-10-25 CN disclosed
US-20220082941-A1 LAMINATE, COMPOSITION, AND, LAMINATE FORMING KIT FUJIFILM CORPORATION (JP) 2022-03-17 US disclosed
WO-2022050313-A1 METHOD FOR MANUFACTURING ORGANIC LAYER PATTERN, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 富士フイルム株式会社 2022-03-10 WO disclosed
US-20220075265-A1 Laminate, composition, and, laminate forming kit FUJIFILM CORPORATION (JP) 2022-03-10 US disclosed
US-20220066323-A1 Laminate, composition, and laminate forming kit FUJIFILM CORPORATION (JP) 2022-03-03 US disclosed
CN-113574455-A Laminate, composition, and laminate-forming kit 富士胶片株式会社 2021-10-29 CN disclosed
EP-3064997-B1 LAMINATE AND USE OF A KIT FOR MANUFACTURING OF A LAMINATE FUJIFILM CORP (JP) 2021-04-28 EP disclosed
US-10833272-B2 Laminate and kit FUJIFILM CORPORATION (JP) 2020-11-10 US disclosed
WO-2020195995-A1 MULTILAYER BODY, COMPOSITION, AND KIT FOR FORMING MULTILAYER BODY 富士フイルム株式会社 2020-10-01 WO disclosed
US-20030031950-A1 A compound capable of generating an acid upon irradiation; a resin capable of decomposing by the action of an acid to increase the solubility; and a specified dissolution-inhibiting compound. FUJI PHOTO FILM CO., LTD 2003-02-13 US disclosed
US-6506535-B1 A positive working photoresist composition for use in the production of semiconductor integrated circuit devices, mask for the production of integrated circuits, printed wiring boards, liquid crystal panels FUJI PHOTO FILM CO., LTD. (JP) 2003-01-14 US disclosed
US-20030008241-A1 Positive-working resist composition FUJI PHOTO FILM CO., LTD. 2003-01-09 US disclosed
US-6479211-B1 FOR FAR ULTRAVIOLET EXPOSURE, WHICH CAN FORM A HIGHLY PRECISE PATTERN USING LIGHT IN THE FAR ULTRAVIOLET REGION INCLUDING AN EXCIMER LASER RAY, PARTICULARLY, IN THE REGION OF 250 NM OR LESS FUJI PHOTO FILM CO., LTD. (JP) 2002-11-12 US disclosed
US-20020064727-A1 Positive photoresist composition FUJI PHOTO FILM CO., LTD. 2002-05-30 US disclosed
US-20020048720-A1 Positive photoresist composition FUJIFILM CORPORATION (JP) 2002-04-25 US disclosed
US-20020009666-A1 Positive photoresist composition FUJIFILM CORPORATION (JP) 2002-01-24 US disclosed
US-20010041303-A1 Positive photoresist composition FUJIFILM CORPORATION (JP) 2001-11-15 US disclosed
EP-1096319-A1 Positive-working photoresist composition FUJI PHOTO FILM CO., LTD. (JP) 2001-05-02 EP disclosed
EP-1091248-A1 Postive-working resist composition FUJI PHOTO FILM CO., LTD. (JP) 2001-04-11 EP disclosed