SCHEMBL13130992

SCHEMBL13130992

Cc1ccc([S+](c2ccc(C)cc2)c2ccc(OC3CC(=O)OC3=O)cc2)cc1

nearest known ligand 0.38

Predicted protein targets (top 13)

geneUniProtsupporting neighboursconfidence
HPGD P15428 2/20 0.33
ALDH1A1 P00352 4/20 0.32
MAPT P10636 3/20 0.32
MEN1 O00255 2/20 0.32
KMT2A Q03164 2/20 0.32
THRB P10828 2/20 0.32
GLA P06280 1/20 0.32
RECQL P46063 1/20 0.32
LMNA P02545 1/20 0.31
MAOB P27338 2/20 0.30
SIRT2 Q8IXJ6 2/20 0.30
ALDH2 P05091 1/20 0.30
HTT P42858 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL13131098 0.93 ALDH1A1 (0.30) ALDH1A1
SCHEMBL4567673 0.91 HPGD (0.37) HPGDALDH1A1MAPTMEN1KMT2A
SCHEMBL13130988 0.87 DDB1 (0.34) HPGDALDH1A1MAPTMEN1KMT2A
SCHEMBL13131053 0.87 DDB1 (0.34) HPGDALDH1A1MAPTMEN1KMT2A
SCHEMBL13131004 0.75 HTT (0.33) MAOBHTT
SCHEMBL1930873 0.75 DDB1 (0.44) HPGDALDH1A1ALDH2
SCHEMBL12996639 0.74 HTT (0.41) MAPTMEN1KMT2ALMNAMAOB
SCHEMBL13163191 0.73 KDM4E (0.38) HPGDALDH1A1MAPTMEN1KMT2A
SCHEMBL13131104 0.71 CTRB1 (0.37) HPGDALDH1A1MAPTMEN1KMT2A
SCHEMBL13131091 0.68 POLB (0.38) HPGDALDH1A1MEN1KMT2A

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 2 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8895222-B2 Actinic ray-sensitive or radiation-sensitive resin composition and resist film and pattern forming method using the composition FUJIFILM CORPORATION (JP) 2014-11-25 US disclosed
US-20100248149-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION AND RESIST FILM AND PATTERN FORMING METHOD USING THE COMPOSITION FUJIFILM CORPORATION (JP) 2010-09-30 US disclosed