SCHEMBL1317837

SCHEMBL1317837

CC(C)[SiH2]OCC(c1ccccc1)c1ccccc1

nearest known ligand 0.40

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
CA12 O43570 2/20 0.40
CA1 P00915 2/20 0.40
CA2 P00918 2/20 0.40
CA9 Q16790 2/20 0.40
TAAR1 Q96RJ0 5/20 0.39
HRH1 P35367 5/20 0.39
HTR2A P28223 4/20 0.39
TDP1 Q9NUW8 1/20 0.38
CHRM2 P08172 2/20 0.37
CHRM1 P11229 2/20 0.37
ADRA1A P35348 2/20 0.37
SLC6A3 Q01959 2/20 0.37
KCNH2 Q12809 2/20 0.37
CYP3A4 P08684 2/20 0.37
LMNA P02545 2/20 0.37
HTR1A P08908 1/20 0.37
ADRA2A P08913 1/20 0.37
ADORA3 P0DMS8 1/20 0.37
SMPD1 P17405 1/20 0.37
DRD1 P21728 1/20 0.37

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL1314756 0.82 LMNA (0.39) CA12CA1CA2CA9TAAR1
SCHEMBL2238107 0.78 CA12 (0.42) CA12CA1CA2CA9TAAR1
SCHEMBL4268026 0.75 CA12 (0.40) CA12CA1CA2CA9TAAR1
SCHEMBL28648302 0.75 LMNA (0.40) LMNAADRA2ASLC6A4CYP1A2CYP2D6
SCHEMBL705912 0.74 CA12 (0.42) CA12CA1CA2CA9TAAR1
SCHEMBL704842 0.74 CA12 (0.42) CA12CA1CA2CA9TAAR1
SCHEMBL3894510 0.74 HTR2A (0.46) CA12CA1CA2CA9TAAR1
SCHEMBL22551526 0.73 CA12 (0.31) CA12CA1CA2CA9
SCHEMBL1313616 0.73 HRH1 (0.39) CA12CA1CA2CA9TAAR1
SCHEMBL703382 0.72 CA12 (0.41) CA12CA1CA2CA9TAAR1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 15 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-109715680-B Process for preparing high cis-1, 4-polydienes with lanthanide-based catalyst compositions 株式会社普利司通 2021-10-19 CN disclosed
EP-2584005-B1 TYPICAL METAL CONTAINING POLYSILOXANE COMPOSITION, PROCESS FOR PRODUCTION OF SAME, AND USES THEREOF TOSOH CORP (JP) 2018-02-21 EP disclosed
US-8907038-B2 Typical metal containing polysiloxane composition, process for its production, and its uses TOSOH CORPORATION (JP) 2014-12-09 US disclosed
EP-2584005-A1 TYPICAL METAL CONTAINING POLYSILOXANE COMPOSITION, PROCESS FOR PRODUCTION OF SAME, AND USES THEREOF Tosoh Corporation (JP) 2013-04-24 EP disclosed
US-20130090447-A1 TYPICAL METAL CONTAINING POLYSILOXANE COMPOSITION, PROCESS FOR ITS PRODUCTION, AND ITS USES TOSOH CORPORATION (JP) 2013-04-11 US disclosed
US-8163950-B2 Processes for the production of tri-organo-monoalkoxysilanes and process for the production of tri-organo-monochlorosilanes SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-04-24 US disclosed
US-20110275849-A1 PROCESSES FOR THE PRODUCTION OF TRI-ORGANO-MONOALKOXYSILANES AND PROCESS FOR THE PRODUCTION OF TRI-ORGANO-MONOCHLOROSILANES BANNOU TADASHI 2011-11-10 US disclosed
US-8008521-B2 Processes for the production of tri-organo-monoalkoxysilanes and process for the production of tri-organo-monochlorosilanes HOKKO CHEMICAL INDUSTRY CO., LTD. (JP) 2011-08-30 US disclosed
US-20090082585-A1 PROCESSES FOR THE PRODUCTION OF TRI-ORGANO-MONOALKOXYSILANES AND PROCESS FOR THE PRODUCTION OF TRI-ORGANO-MONOCHLOROSILANES BANNOU TADASHI 2009-03-26 US disclosed
US-7459577-B2 Reacting a chlorosilane with grignard reagent SHIN-ETSU CHEMICAL CO., LTD. (JP) 2008-12-02 US disclosed
US-7413775-B2 Insulating film material containing an organic silane compound, its production method and semiconductor device TOSOH CORPORATION (JP) 2008-08-19 US disclosed
US-7160625-B2 Insulating film material containing an organic silane compound, its production method and semiconductor device TOSOH CORPORATION (JP) 2007-01-09 US disclosed
US-20060127683-A1 Insulating film material containing an organic silane compound, its production method and semiconductor device TOSOH CORPORATION 2006-06-15 US disclosed
US-20050070730-A1 Production processes for triorganomonoalkoxysilanes and triorganomonochlorosilanes SHIN-ETSU CHEMICAL CO., LTD. (JP) 2005-03-31 US disclosed
US-20030180550-A1 Insulating film material containing an organic silane compound, its production method and semiconductor device TOSOH CORPORATION 2003-09-25 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (3 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20110275849-A1 PROCESSES FOR THE PRODUCTION OF TRI-ORGANO-MONOALKOXYSILANES AND PROCESS FOR THE PRODUCTION OF TRI-ORGANO-MONOCHLOROSILANES MLX, HAX1, RPS4X CA12 433/4885CA1 213/4885CA2 598/4885
US-20090082585-A1 PROCESSES FOR THE PRODUCTION OF TRI-ORGANO-MONOALKOXYSILANES AND PROCESS FOR THE PRODUCTION OF TRI-ORGANO-MONOCHLOROSILANES MLX, HAX1, RPS4X CA12 433/4885CA1 213/4885CA2 598/4885
US-20050070730-A1 Production processes for triorganomonoalkoxysilanes and triorganomonochlorosilanes MLX, HAX1, GRIA3 CA12 343/4885CA1 137/4885CA2 397/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.