SCHEMBL1320922

SCHEMBL1320922

O=S(=O)(NC12CC3CC(CC(C3)C1)C2)C(F)(F)F

nearest known ligand 0.46

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
ALDH1A1 P00352 1/20 0.46
LMNA P02545 1/20 0.46
EPHX2 P34913 4/20 0.39
EPHX1 P07099 2/20 0.39
CA2 P00918 3/20 0.38
CA12 O43570 2/20 0.38
CA7 P43166 2/20 0.38
CA9 Q16790 1/20 0.38
CA14 Q9ULX7 1/20 0.38
GRIN2D O15399 1/20 0.38
GRIN3B O60391 1/20 0.38
GRIN1 Q05586 1/20 0.38
GRIN2A Q12879 1/20 0.38
GRIN2B Q13224 1/20 0.38
GRIN2C Q14957 1/20 0.38
GRIN3A Q8TCU5 1/20 0.38
CA1 P00915 2/20 0.38
CA13 Q8N1Q1 1/20 0.38
MEN1 O00255 1/20 0.34
KMT2A Q03164 1/20 0.34

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL19042232 0.88 LMNA (0.44) ALDH1A1LMNAEPHX2EPHX1CA2
SCHEMBL15935667 0.83 ALDH1A1 (0.38) ALDH1A1LMNAEPHX2EPHX1CA2
SCHEMBL17410853 0.81 ALDH1A1 (0.41) ALDH1A1LMNAEPHX2EPHX1CA2
SCHEMBL19042233 0.81 ALDH1A1 (0.41) ALDH1A1LMNAEPHX2EPHX1CA2
SCHEMBL15116366 0.81 DPP4 (0.38) ALDH1A1EPHX2
SCHEMBL1319067 0.80 CA1 (0.32) ALDH1A1LMNACA2CA1
SCHEMBL19042242 0.80 CA2 (0.44) ALDH1A1LMNAEPHX2EPHX1CA2
SCHEMBL14606225 0.79 LMNA (0.46) ALDH1A1LMNAEPHX2EPHX1CA2
SCHEMBL19421335 0.78 LMNA (0.40) ALDH1A1LMNAEPHX2EPHX1CA2
SCHEMBL17264821 0.77 ALDH1A1 (0.40) ALDH1A1LMNAEPHX2EPHX1CA2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 12 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20230359119-A1 RESIST COMPOSITION AND PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-11-09 US disclosed
US-20170184962-A1 RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-06-29 US disclosed
US-20170184964-A1 RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-06-29 US disclosed
US-20170184963-A1 RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-06-29 US disclosed
US-8980527-B2 Pattern forming process and resist compostion SHIN-ETSU CHEMICAL CO., LTD. (JP) 2015-03-17 US disclosed
US-20130183621-A1 PATTERN FORMING PROCESS AND RESIST COMPOSTION SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-07-18 US disclosed
US-8057981-B2 Resist composition, resist protective coating composition, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2011-11-15 US disclosed
US-7759047-B2 Resist protective film composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2010-07-20 US disclosed
US-7670750-B2 Polymer, resist protective coating material, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2010-03-02 US disclosed
US-20090208867-A1 Resist Composition, Resist Protective Coating Composition, and Patterning Process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-08-20 US disclosed
US-20080085466-A1 Polymer, resist protective coating material, and patterning process SHIN-ETSU CHEMICAL CO., LTD. 2008-04-10 US disclosed
US-20070275326-A1 Resist protective film composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-11-29 US disclosed