SCHEMBL132134

SCHEMBL132134

CCC(C)(C)C(=O)OC1CCCC1

nearest known ligand 0.47

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
EPHX1 P07099 2/20 0.47
CYP19A1 P11511 1/20 0.45
NAAA Q02083 2/20 0.44
FKBP1A P62942 4/20 0.39
HTT P42858 2/20 0.39
HMGCR P04035 1/20 0.38
CYP2C19 P33261 1/20 0.37
CCR2 P41597 1/20 0.36
CHRM3 P20309 4/20 0.36
NPC1 O15118 1/20 0.36
RAB9A P51151 1/20 0.36
SMN1; SMN2 Q16637 1/20 0.36
MLNR O43193 1/20 0.35
CHRM2 P08172 1/20 0.35
CHRM1 P11229 1/20 0.35
HTR2A P28223 1/20 0.35
HTR2C P28335 1/20 0.35
HRH1 P35367 1/20 0.35
OPRM1 P35372 1/20 0.35
DRD3 P35462 1/20 0.35

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL131561 0.98 EPHX1 (0.50) EPHX1CYP19A1NAAAFKBP1AHTT
SCHEMBL3434643 0.98 EPHX1 (0.50) EPHX1CYP19A1NAAAFKBP1AHTT
SCHEMBL108478 0.98 EPHX1 (0.50) EPHX1CYP19A1NAAAFKBP1AHTT
SCHEMBL20388945 0.98 EPHX1 (0.50) EPHX1CYP19A1NAAAFKBP1AHTT
SCHEMBL3435204 0.96 EPHX1 (0.43) EPHX1CYP19A1NAAAFKBP1AHTT
SCHEMBL3434648 0.92 EPHX1 (0.37) EPHX1CYP19A1NAAAFKBP1AHTT
SCHEMBL17752194 0.86 EPHX1 (0.44) EPHX1CYP19A1NAAAFKBP1AHTT
SCHEMBL18253418 0.86 EPHX1 (0.37) EPHX1CYP19A1NAAAHTTHMGCR
SCHEMBL18253353 0.86 EPHX1 (0.41) EPHX1CYP19A1NAAAFKBP1AHTT
SCHEMBL18253471 0.85 CYP2C19 (0.37) EPHX1CYP19A1NAAAFKBP1AHMGCR

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 80 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-11829069-B2 Photoresist compositions and methods ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) 2023-11-28 US disclosed
US-9952509-B2 Pattern forming method, actinic ray-sensitive or radiation-sensitive resin composition, method for manufacturing electronic device, and electronic device FUJIFILM CORPORATION (JP) 2018-04-24 US disclosed
US-20170369616-A1 RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-12-28 US disclosed
US-9810981-B2 Pattern formation method, etching method, electronic device manufacturing method, and electronic device FUJIFILM CORPORATION (JP) 2017-11-07 US disclosed
US-20170184973-A1 ORGANIC TREATMENT LIQUID FOR PATTERNING RESIST FILM, METHOD OF PRODUCING ORGANIC TREATMENT LIQUID FOR PATTERNING RESIST FILM, STORAGE CONTAINER OF ORGANIC TREATMENT LIQUID FOR PATTERNING RESIST FILM, PATTERN FORMING METHOD USING THE SAME, AND METHOD OF PRODUCING ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2017-06-29 US disclosed
US-20170146908-A1 PATTERN FORMING METHOD AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE USING SAME FUJIFILM CORPORATION (JP) 2017-05-25 US disclosed
US-20170115571-A1 PATTERN FORMING METHOD AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE USING SAME FUJIFILM CORPORATION (JP) 2017-04-27 US disclosed
US-20170097565-A1 ACTIVE LIGHT SENSITIVE OR RADIATION SENSITIVE RESIN COMPOSITION, ACTIVE LIGHT SENSITIVE OR RADIATION SENSITIVE FILM, PATTERN FORMING METHOD, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2017-04-06 US disclosed
US-20170090287-A1 OVERCOAT COMPOSITIONS AND METHODS FOR PHOTOLITHOGRAPHY DUPONT SPECIALTY MATERIALS KOREA LTD (KR) 2017-03-30 US disclosed
US-20170090283-A1 PHOTORESIST COMPOSITIONS AND METHODS DUPONT SPECIALTY MATERIALS KOREA LTD (KR) 2017-03-30 US disclosed
US-20090197200-A1 Resist top coat composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-08-06 US disclosed
US-7556908-B2 Chemically amplified positive resist composition, (meth)acrylate derivative and a process for producing the same SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2009-07-07 US disclosed
US-20080206668-A1 NEGATIVE RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2008-08-28 US disclosed
US-7354693-B2 Polymer, resist protective coating material, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2008-04-08 US disclosed
US-20070190453-A1 Resist cover film-forming material, process for forming resist pattern, semiconductor device and process for manufacturing the same FUJITSU LIMITED (JP) 2007-08-16 US disclosed
US-20070178407-A1 Polymer, resist protective coating material, and patterning process SHIN-ETSU CHEMICAL CO., LTD. 2007-08-02 US disclosed
US-20070172761-A1 Positive photosensitive composition and method of forming pattern using the same FUJIFILM CORPORATION (JP) 2007-07-26 US disclosed
US-7232642-B2 Chemically amplified positive resist composition, a haloester derivative and a process for producing the same SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2007-06-19 US disclosed
US-20070122736-A1 RESIST PROTECTIVE FILM MATERIAL AND PATTERN FORMATION METHOD SHIN-ETSU CHEMICAL CO., LTD. 2007-05-31 US disclosed
US-20070122741-A1 Resist protective coating material and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-05-31 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (3 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20170090287-A1 OVERCOAT COMPOSITIONS AND METHODS FOR PHOTOLITHOGRAPHY OGT, COLGALT1, PARG EPHX1 1270/4885CYP19A1 3257/4885NAAA 616/4885
US-20170184973-A1 ORGANIC TREATMENT LIQUID FOR PATTERNING RESIST FILM, METHOD OF PRODUCING ORGANIC TREATMENT LIQUID FOR PATTERNING RESIST FILM, STORAGE CONTAINER OF ORGANIC TREATMENT LIQUID FOR PATTERNING RESIST FILM, PATTERN FORMING METHOD USING THE SAME, AND METHOD OF PRODUCING ELECTRONIC DEVICE MYB, NCL, SMYD2 EPHX1 4059/4885CYP19A1 2523/4885NAAA 2296/4885
US-20170090283-A1 PHOTORESIST COMPOSITIONS AND METHODS PARG, PNN, PARN EPHX1 3934/4885CYP19A1 4252/4885NAAA 563/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.