Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | ALDH1A1 | P00352 | 4/20 | 0.37 |
| ▸ | NPSR1 | Q6W5P4 | 2/20 | 0.37 |
| ▸ | MEN1 | O00255 | 1/20 | 0.37 |
| ▸ | HTT | P42858 | 1/20 | 0.37 |
| ▸ | KMT2A | Q03164 | 1/20 | 0.37 |
| ▸ | EPHX2 | P34913 | 3/20 | 0.35 |
| ▸ | TSHR | P16473 | 2/20 | 0.33 |
| ▸ | CYP1A2 | P05177 | 1/20 | 0.32 |
| ▸ | CYP2C9 | P11712 | 1/20 | 0.32 |
| ▸ | CYP2C19 | P33261 | 1/20 | 0.32 |
| ▸ | CYP17A1 | P05093 | 3/20 | 0.32 |
| ▸ | CYP19A1 | P11511 | 3/20 | 0.32 |
| ▸ | KDM4E | B2RXH2 | 1/20 | 0.30 |
| ▸ | GLA | P06280 | 1/20 | 0.30 |
| ▸ | GAA | P10253 | 1/20 | 0.30 |
| ▸ | MAPK1 | P28482 | 1/20 | 0.30 |
| ▸ | SMN1; SMN2 | Q16637 | 1/20 | 0.30 |
| ▸ | TDP1 | Q9NUW8 | 1/20 | 0.30 |
| ▸ | L3MBTL1 | Q9Y468 | 1/20 | 0.30 |
| ▸ | ATM | Q13315 | 1/20 | 0.30 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| Methacrylic Acid SCHEMBL8492802 | 0.83 | — | — | |
| SCHEMBL1322591 | 0.82 | ALDH1A1 (0.36) | ALDH1A1NPSR1MEN1HTTKMT2A | |
| SCHEMBL1322672 | 0.81 | PRKCA (0.44) | ALDH1A1NPSR1MEN1KMT2ACYP17A1 | |
| SCHEMBL14962543 | 0.81 | THRB (0.46) | ALDH1A1NPSR1MEN1HTTKMT2A | |
| SCHEMBL3267819 | 0.80 | TSHR (0.47) | ALDH1A1TSHR | |
| SCHEMBL2740746 | 0.79 | CYP17A1 (0.35) | ALDH1A1NPSR1HTTEPHX2TSHR | |
| SCHEMBL8518654 | 0.78 | EPHX2 (0.30) | EPHX2 | |
| SCHEMBL8491934 | 0.77 | THRB (0.50) | ALDH1A1NPSR1MEN1HTTKMT2A | |
| SCHEMBL8519751 | 0.77 | EPHX2 (0.35) | EPHX2TSHR | |
| SCHEMBL19499985 | 0.76 | NPSR1 (0.50) | ALDH1A1NPSR1MEN1HTTKMT2A |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 13 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-8378016-B2 | Chemically amplified positive resist composition | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2013-02-19 | — | — | US | disclosed |
| US-8298746-B2 | Chemically amplified positive resist composition | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2012-10-30 | — | — | US | disclosed |
| US-8062830-B2 | Chemically amplified positive resist composition | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2011-11-22 | — | — | US | disclosed |
| US-8057983-B2 | liquid immersion lithography, solves problem of defect caused by residual fluid droplets on the resist film; blend of resin containing no fluorine and acid labile group, and an acrylic fluoro-copolymer with units of a fluoromonomer and units of acid labile, lactone, or hydroxy-functional group | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2011-11-15 | — | — | US | disclosed |
| US-20110165519-A1 | RESIN SUITABLE FOR AN ACID GENERATOR AND A CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION CONTAINING THE SAME | ANDO NOBUO | 2011-07-07 | — | — | US | disclosed |
| US-7932334-B2 | Resin suitable for an acid generator | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2011-04-26 | — | — | US | disclosed |
| US-7794914-B2 | liquid immersion lithography, solves problem of defect caused by residual fluid droplets on the resist film; blend of resin containing no fluorine and acid labile group, and an acrylic fluoro-copolymer with units of a fluoromonomer and units of acid labile, lactone, or hydroxy-functional group | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2010-09-14 | — | — | US | disclosed |
| US-20100010129-A1 | CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2010-01-14 | — | — | US | disclosed |
| US-20090269695-A1 | CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2009-10-29 | — | — | US | disclosed |
| US-20090263742-A1 | liquid immersion lithography, solves problem of defect caused by residual fluid droplets on the resist film; blend of resin containing no fluorine and acid labile group, and an acrylic fluoro-copolymer with units of a fluoromonomer and units of acid labile, lactone, or hydroxy-functional group | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2009-10-22 | — | — | US | disclosed |
| US-20070218401-A1 | liquid immersion lithography, solves problem of defect caused by residual fluid droplets on the resist film; blend of resin containing no fluorine and acid labile group, and an acrylic fluoro-copolymer with units of a fluoromonomer and units of acid labile, lactone, or hydroxy-functional group | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2007-09-20 | — | — | US | disclosed |
| US-20070149702-A1 | Resin suitable for an acid generator and a chemically amplified positive resist composition containing the same | SUMITOMO CHEMICAL COMPANY, LIMITED | 2007-06-28 | — | — | US | disclosed |
| US-5994025-A | MIXTURE OF POLYMER AND ACID GENERATOR | NEC CORPORATION (JP) | 1999-11-30 | — | — | US | disclosed |