Predicted protein targets (top 9)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | FKBP1A | P62942 | 7/20 | 0.35 |
| ▸ | HMGCR | P04035 | 1/20 | 0.35 |
| ▸ | CHRM2 | P08172 | 5/20 | 0.34 |
| ▸ | CHRM4 | P08173 | 5/20 | 0.34 |
| ▸ | CHRM1 | P11229 | 5/20 | 0.34 |
| ▸ | CHRM3 | P20309 | 5/20 | 0.34 |
| ▸ | CCR2 | P41597 | 1/20 | 0.33 |
| ▸ | RIPK1 | Q13546 | 1/20 | 0.32 |
| ▸ | EPHX1 | P07099 | 2/20 | 0.32 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL132896 | 0.98 | FKBP1A (0.36) | FKBP1AHMGCRCHRM2CHRM4CHRM1 | |
| SCHEMBL16125544 | 0.91 | HMGCR (0.32) | FKBP1AHMGCRRIPK1 | |
| SCHEMBL18802884 | 0.89 | FKBP1A (0.33) | FKBP1AHMGCRCHRM2CHRM4CHRM1 | |
| SCHEMBL17370199 | 0.87 | FKBP1A (0.35) | FKBP1AHMGCR | |
| SCHEMBL15978045 | 0.86 | HSD11B1 (0.36) | FKBP1AHMGCREPHX1 | |
| SCHEMBL106191 | 0.85 | HMGCR (0.36) | FKBP1AHMGCRCHRM2CHRM4CHRM1 | |
| SCHEMBL106966 | 0.84 | FKBP1A (0.36) | FKBP1AHMGCRCHRM2CHRM4CHRM1 | |
| SCHEMBL11941678 | 0.84 | FKBP1A (0.36) | FKBP1AHMGCRCHRM2CHRM4CHRM1 | |
| SCHEMBL107051 | 0.84 | FKBP1A (0.36) | FKBP1AHMGCRCHRM2CHRM4CHRM1 | |
| SCHEMBL18802879 | 0.84 | FKBP1A (0.36) | FKBP1AHMGCRCHRM2CHRM4CHRM1 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 382 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-11874601-B2 | Resist composition, method of forming resist pattern, compound, and acid diffusion-controlling agent | TOKYO OHKA KOGYO CO., LTD. (JP) | 2024-01-16 | — | — | US | disclosed |
| US-11835857-B2 | Resist composition and method of forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2023-12-05 | — | — | US | disclosed |
| US-11829068-B2 | Resist composition, method of forming resist pattern, compound, and resin | TOKYO OHKA KOGYO CO., LTD. (JP) | 2023-11-28 | — | — | US | disclosed |
| US-11822240-B2 | Resist composition and method of forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2023-11-21 | — | — | US | disclosed |
| US-11780946-B2 | Alternating copolymer, method of producing alternating copolymer, method of producing polymeric compound, and method of forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2023-10-10 | — | — | US | disclosed |
| US-11762288-B2 | Resist composition, method of forming resist pattern, and acid diffusion-controlling agent | TOKYO OHKA KOGYO CO., LTD. (JP) | 2023-09-19 | — | — | US | disclosed |
| US-11754922-B2 | Resist composition and method of forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2023-09-12 | — | — | US | disclosed |
| US-11754926-B2 | Method of forming resist pattern, resist composition and method of producing the same | TOKYO OHKA KOGYO CO., LTD. (JP) | 2023-09-12 | — | — | US | disclosed |
| US-11747726-B2 | Resist composition and method of forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2023-09-05 | — | — | US | disclosed |
| US-11709425-B2 | Resist composition and method of forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2023-07-25 | — | — | US | disclosed |
| US-20080008961-A1 | POSITIVE RESIST COMPOSITIONS AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2008-01-10 | — | — | US | disclosed |
| US-20080008959-A1 | Resin comprising monomers of cyclopentyl- or cyclohexyl (meth)acrylate; hydroxyadamantyl (meth)acrylate; 3,8-epoxy-6-oxabicyclo[3.2.1]octyl (meth)acrylat;, and/or fluoroalkyl (meth)acrylate; ArF lithography; resolution; forms a pattern with high rectangularity | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2008-01-10 | — | — | US | disclosed |
| US-20070231738-A1 | Resist composition and patterning process using the same | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2007-10-04 | — | — | US | disclosed |
| US-20070231741-A1 | Resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2007-10-04 | — | — | US | disclosed |
| US-20070218405-A1 | Positive resist composition and pattern formation method using the positive resist composition | FUJIFILM CORPORATION (JP) | 2007-09-20 | — | — | US | disclosed |
| US-20070218405-A1 | Positive resist composition and pattern formation method using the positive resist composition | FUJIFILM CORPORATION (JP) | 2007-09-20 | — | — | US | disclosed |
| US-20070179309-A1 | fluoro (meth)acrylate or unsaturated polycyclic ester monomer as radiation-sensitive resist compositions; good development characteristics; high resolution and an anti-swelling effect; low cost production; precise micropatterning | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2007-08-02 | — | — | US | disclosed |
| US-20070172761-A1 | Positive photosensitive composition and method of forming pattern using the same | FUJIFILM CORPORATION (JP) | 2007-07-26 | — | — | US | disclosed |
| US-20070160929-A1 | photoresists; photomasks; heat treatment; high resolution and prevent dissolution in water and penetration of water when processed by immersion lithography | SHIN-ETSU CHEMICAL CO., LTD. | 2007-07-12 | — | — | US | disclosed |
| US-20070148594-A1 | Polymers, resist compositions and patterning process | SHIN-ETSU CHEMICAL CO., LTD. | 2007-06-28 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (3 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-11709425-B2 | Resist composition and method of forming resist pattern | RER1, RRS1, RXFP4 | FKBP1A 466/4885HMGCR 1978/4885CHRM2 1478/4885 |
| US-11874601-B2 | Resist composition, method of forming resist pattern, compound, and acid diffusion-controlling agent | MRPS23, MRPS22, SLC11A2 | FKBP1A 4177/4885HMGCR 1395/4885CHRM2 831/4885 |
| US-20070179309-A1 | fluoro (meth)acrylate or unsaturated polycyclic ester monomer as radiation-sensitive resist compositions; good development characteristics; high resolution and an anti-swelling effect; low cost production; precise micropatterning | AFF1, FASN, FAR1 | FKBP1A 3867/4885HMGCR 469/4885CHRM2 170/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.