SCHEMBL13296014

SCHEMBL13296014

CN(C)c1ccc(N2c3ccccc3N(C)c3ccccc32)cc1

nearest known ligand 0.49

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
PDGFRB P09619 1/20 0.49
KDM4E B2RXH2 4/20 0.47
L3MBTL1 Q9Y468 3/20 0.47
GAA P10253 2/20 0.47
NPSR1 Q6W5P4 2/20 0.47
MAPT P10636 8/20 0.42
ALDH1A1 P00352 5/20 0.42
TSHR P16473 2/20 0.42
HSD17B10 Q99714 2/20 0.42
ALOX15 P16050 1/20 0.42
APP P05067 5/20 0.42
SNCA P37840 5/20 0.42
NOX4 Q9NPH5 3/20 0.41
NOX1 Q9Y5S8 2/20 0.41
CYBB P04839 1/20 0.41
MEN1 O00255 3/20 0.40
KMT2A Q03164 3/20 0.40
MAPK1 P28482 2/20 0.40
RECQL P46063 1/20 0.40
TDP1 Q9NUW8 2/20 0.38

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL9066824 0.84 SNCA (0.41) PDGFRBL3MBTL1MAPTALDH1A1TSHR
SCHEMBL12251824 0.79 MAOA (0.44) L3MBTL1GAANPSR1ALDH1A1MEN1
SCHEMBL24457994 0.78 HDAC6 (0.50) PDGFRBKDM4EL3MBTL1GAANPSR1
SCHEMBL13024154 0.78 P2RX4 (0.45) PDGFRBKDM4EL3MBTL1GAANPSR1
SCHEMBL20788946 0.78 ELANE (0.46) KDM4EGAAMAPTALDH1A1TSHR
SCHEMBL19001735 0.78 FAAH (0.50) ALDH1A1TSHRALOX15APPMEN1
SCHEMBL21973889 0.76 MAPT (0.41) PDGFRBKDM4EL3MBTL1GAANPSR1
SCHEMBL4571020 0.71 MAOA (0.60) KDM4EL3MBTL1GAAMAPTALDH1A1
SCHEMBL13636983 0.71
SCHEMBL29390564 0.71 MAOA (0.60) KDM4EL3MBTL1GAAMAPTALDH1A1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-7732061-B2 A layer of a mixture of metal oxide and a 1,3,5-tris(N-heterocycl-N-yl)-s-triazine between the electrodes; prevention of an increase in thedriving voltage if film thickens; charge transfer compounds; luminescence; pixel displays with images of favorable reproducible color SEMICONDUCTOR ENERGY LABORATORY CO., LTD. (JP) 2010-06-08 US disclosed
US-7732061-B2 A layer of a mixture of metal oxide and a 1,3,5-tris(N-heterocycl-N-yl)-s-triazine between the electrodes; prevention of an increase in thedriving voltage if film thickens; charge transfer compounds; luminescence; pixel displays with images of favorable reproducible color SEMICONDUCTOR ENERGY LABORATORY CO., LTD. (JP) 2010-06-08 US disclosed
US-20070194692-A1 Light emitting element and light emitting device having the light emittig element SEMICONDUCTOR ENERGY LABORATORY CO., LTD. (JP) 2007-08-23 US disclosed
US-20070194692-A1 Light emitting element and light emitting device having the light emittig element SEMICONDUCTOR ENERGY LABORATORY CO., LTD. (JP) 2007-08-23 US disclosed