SCHEMBL13296149

SCHEMBL13296149

CNCC(O)COC(C)=O

nearest known ligand 0.54

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
ADRB2 P07550 5/20 0.47
ADRB1 P08588 5/20 0.47
ADRB3 P13945 5/20 0.47
KISS1R Q969F8 2/20 0.44
ALDH1A1 P00352 3/20 0.40
USP2 O75604 2/20 0.40
CYP3A4 P08684 2/20 0.40
MAPT P10636 2/20 0.40
HPGD P15428 1/20 0.40
SMN1; SMN2 Q16637 1/20 0.40
MEN1 O00255 1/20 0.40
TP53 P04637 1/20 0.40
MAPK1 P28482 1/20 0.40
KMT2A Q03164 1/20 0.40
ALOX15 P16050 1/20 0.40
TDP1 Q9NUW8 1/20 0.39
CA12 O43570 1/20 0.38
CA1 P00915 1/20 0.38
CA2 P00918 1/20 0.38
CA9 Q16790 1/20 0.38

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL304203 0.81 TDP1 (0.54) ALDH1A1USP2CYP3A4MAPTHPGD
SCHEMBL29012611 0.81 CYP1A2 (0.44) ADRB2ADRB1ADRB3KISS1RALDH1A1
SCHEMBL12359300 0.81 ALDH1A1 (0.39) ADRB2ADRB1ADRB3ALDH1A1USP2
SCHEMBL685093 0.80 TSHR (0.55) ADRB2ADRB1ADRB3KISS1RALDH1A1
Hydrochloric Acid SCHEMBL1345735 0.79 TSHR (0.53) ADRB2ADRB1ADRB3KISS1RALDH1A1
Dimethylamine SCHEMBL28227831 0.77 ALDH1A1 (0.39) ADRB2ADRB1ADRB3ALDH1A1USP2
SCHEMBL12933227 0.77 TDP1 (0.47) ALDH1A1SMN1; SMN2MEN1KMT2ATDP1
SCHEMBL8074473 0.77 ALDH1A1 (0.58) ALDH1A1USP2CYP3A4MAPTHPGD
SCHEMBL19821991 0.76 ADRB2 (0.40) ADRB2ADRB1ADRB3KISS1RALOX15
SCHEMBL29644203 0.76 KDM4E (0.38) ADRB2ADRB1ADRB3ALDH1A1USP2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-7736822-B2 Resist underlayer coating forming composition for mask blank, mask blank and mask HOYA CORPORATION (JP) 2010-06-15 US disclosed
US-20100081081-A1 RESIST UNDERLAYER FILM FORMING COMPOSITION FOR ELECTRON BEAM LITHOGRAPHY NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2010-04-01 US disclosed
US-7309560-B2 Composition for forming anti-reflective coating NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2007-12-18 US disclosed
US-20070190459-A1 Resist underlayer coating forming composition for mask blank, mask blank and mask HOYA CORPORATION (JP) 2007-08-16 US disclosed