Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | ALDH1A1 | P00352 | 3/20 | 0.33 |
| ▸ | LMNA | P02545 | 1/20 | 0.33 |
| ▸ | CYP3A4 | P08684 | 3/20 | 0.32 |
| ▸ | HMGCR | P04035 | 3/20 | 0.32 |
| ▸ | USP2 | O75604 | 2/20 | 0.32 |
| ▸ | TSHR | P16473 | 2/20 | 0.32 |
| ▸ | KDM4E | B2RXH2 | 1/20 | 0.32 |
| ▸ | SMN1; SMN2 | Q16637 | 1/20 | 0.32 |
| ▸ | NR1I2 | O75469 | 1/20 | 0.32 |
| ▸ | ABCB11 | O95342 | 1/20 | 0.32 |
| ▸ | NR3C1 | P04150 | 1/20 | 0.32 |
| ▸ | PGR | P06401 | 1/20 | 0.32 |
| ▸ | ABCB1 | P08183 | 1/20 | 0.32 |
| ▸ | ADORA3 | P0DMS8 | 1/20 | 0.32 |
| ▸ | CYP2C8 | P10632 | 1/20 | 0.32 |
| ▸ | CHRM1 | P11229 | 1/20 | 0.32 |
| ▸ | ADRB3 | P13945 | 1/20 | 0.32 |
| ▸ | GABRA1 | P14867 | 1/20 | 0.32 |
| ▸ | ADRA2B | P18089 | 1/20 | 0.32 |
| ▸ | ADRA2C | P18825 | 1/20 | 0.32 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL13817663 | 0.88 | SMN1; SMN2 (0.33) | ALDH1A1LMNATSHRSMN1; SMN2 | |
| SCHEMBL111845 | 0.83 | ALDH1A1 (0.42) | ALDH1A1LMNACYP3A4HMGCRUSP2 | |
| SCHEMBL15722235 | 0.80 | ALDH1A1 (0.35) | ALDH1A1LMNACYP3A4USP2TSHR | |
| SCHEMBL14010747 | 0.80 | ALDH1A1 (0.35) | ALDH1A1LMNAHMGCR | |
| SCHEMBL13219648 | 0.79 | HMGCR (0.34) | ALDH1A1LMNACYP3A4HMGCRUSP2 | |
| SCHEMBL10175615 | 0.74 | — | — | |
| SCHEMBL12227819 | 0.73 | CCR2 (0.32) | ALDH1A1LMNAFKBP1A | |
| SCHEMBL13219653 | 0.73 | CYP3A4 (0.34) | ALDH1A1CYP3A4HMGCRUSP2TSHR | |
| SCHEMBL12227769 | 0.71 | ALDH1A1 (0.33) | ALDH1A1LMNACYP3A4HMGCRUSP2 | |
| SCHEMBL12227777 | 0.71 | CYP3A4 (0.38) | ALDH1A1CYP3A4HMGCRUSP2TSHR |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 467 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-10025186-B2 | Active-light-sensitive or radiation-sensitive resin composition, pattern forming method, and method for manufacturing electronic device | FUJIFILM CORPORATION (JP) | 2018-07-17 | — | — | US | disclosed |
| US-10018913-B2 | Active-light-sensitive or radiation-sensitive resin composition, pattern forming method, and method for manufacturing electronic device | FUJIFILM CORPORATION (JP) | 2018-07-10 | — | — | US | disclosed |
| US-20180120706-A1 | PATTERN FORMING METHOD, LAMINATE, AND RESIST COMPOSITION FOR ORGANIC SOLVENT DEVELOPMENT | FUJIFILM CORPORATION (JP) | 2018-05-03 | — | — | US | disclosed |
| US-9952509-B2 | Pattern forming method, actinic ray-sensitive or radiation-sensitive resin composition, method for manufacturing electronic device, and electronic device | FUJIFILM CORPORATION (JP) | 2018-04-24 | — | — | US | disclosed |
| US-9897922-B2 | Method of forming pattern and developer for use in the method | FUJIFILM CORPORATION (JP) | 2018-02-20 | — | — | US | disclosed |
| US-9885956-B2 | Pattern forming method, and, electronic device producing method and electronic device, each using the same | FUJIFILM CORPORATION (JP) | 2018-02-06 | — | — | US | disclosed |
| US-20180011406-A1 | PATTERN FORMING METHOD, RESIST PATTERN, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND COMPOSITION FOR FORMING UPPER LAYER FILM | FUJIFILM CORPORATION (JP) | 2018-01-11 | — | — | US | disclosed |
| US-9841679-B2 | Actinic ray-sensitive or radiation-sensitive resin composition, pattern forming method, method for manufacturing electronic device, and electronic device | FUJIFILM CORPORATION (JP) | 2017-12-12 | — | — | US | disclosed |
| US-9835945-B2 | Positive resist composition and method of pattern formation with the same | FUJIFILM CORPORATION (JP) | 2017-12-05 | — | — | US | disclosed |
| US-20170322490-A1 | PATTERN FORMING METHOD, METHOD FOR PRODUCING ELECTRONIC DEVICE, AND ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION FOR ORGANIC SOLVENT DEVELOPMENT | FUJIFILM CORPORATION (JP) | 2017-11-09 | — | — | US | disclosed |
| US-7192681-B2 | Positive photosensitive composition | FUJI PHOTO FILM CO., LTD. (JP) | 2007-03-20 | — | — | US | disclosed |
| US-20070059639-A1 | Positive resist composition and pattern-forming method using the same | FUJI PHOTO FILM CO., LTD. | 2007-03-15 | — | — | US | disclosed |
| US-7189492-B2 | Photosensitive composition and pattern forming method using the same | FUJI PHOTO FILM CO., LTD. (JP) | 2007-03-13 | — | — | US | disclosed |
| US-7189492-B2 | Photosensitive composition and pattern forming method using the same | FUJI PHOTO FILM CO., LTD. (JP) | 2007-03-13 | — | — | US | disclosed |
| US-20070054217-A1 | Positive photosensitive composition and pattern-forming method using the same | FUJI PHOTO FILM CO., LTD. | 2007-03-08 | — | — | US | disclosed |
| US-20070042290-A1 | resin containing acrylic ester monomers capable of increasing solubility in alkali developer by action of acid, acid generator, aryldicycloalkylsulfonium compounds, and nonionic surfactant; semiconductors, integrated circuits | FUJI PHOTO FILM CO., LTD. | 2007-02-22 | — | — | US | disclosed |
| US-7179578-B2 | Positive resist composition | FUJI PHOTO FILM CO., LTD. (JP) | 2007-02-20 | — | — | US | disclosed |
| US-7179578-B2 | Positive resist composition | FUJI PHOTO FILM CO., LTD. (JP) | 2007-02-20 | — | — | US | disclosed |
| US-20070031757-A1 | Positive photosensitive composition and method of pattern formation with the same | FUJI PHOTO FILM CO., LTD. | 2007-02-08 | — | — | US | disclosed |
| US-20070026343-A1 | Chemical amplification-type resist composition and production process thereof | FUJI PHOTO FILM CO., LTD. | 2007-02-01 | — | — | US | disclosed |