SCHEMBL1344768

SCHEMBL1344768

CO/N=C(/C#N)c1ccc(OC)cc1

nearest known ligand 0.50

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
▸ NPSR1 Q6W5P4 3/20 0.50
▸ MAPK1 P28482 2/20 0.50
▸ HSP90AA1 P07900 1/20 0.50
▸ GAA P10253 1/20 0.50
▸ PKM P14618 1/20 0.50
▸ GFER P55789 1/20 0.50
▸ TDP1 Q9NUW8 1/20 0.50
▸ MAPT P10636 4/20 0.49
▸ ALDH1A1 P00352 3/20 0.49
▸ KDM4E B2RXH2 3/20 0.49
▸ HPGD P15428 2/20 0.49
▸ TSHR P16473 2/20 0.49
▸ CYP1A2 P05177 1/20 0.49
▸ CYP3A4 P08684 1/20 0.49
▸ NFKB1 P19838 1/20 0.49
▸ APEX1 P27695 1/20 0.49
▸ BLM P54132 1/20 0.49
▸ PMP22 Q01453 1/20 0.49
▸ SMN1; SMN2 Q16637 2/20 0.46
▸ RAB9A P51151 2/20 0.45

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL23504933 1.00 NPSR1 (0.50) NPSR1MAPK1HSP90AA1GAAPKM
SCHEMBL1344772 1.00 NPSR1 (0.50) NPSR1MAPK1HSP90AA1GAAPKM
SCHEMBL10098248 0.86 MAPT (0.46) NPSR1MAPK1HSP90AA1GAAPKM
SCHEMBL10172227 0.83 SMN1; SMN2 (0.57) NPSR1MAPK1HSP90AA1GAAPKM
SCHEMBL10233427 0.83 NPSR1 (0.47) NPSR1MAPK1HSP90AA1GAAPKM
SCHEMBL6706161 0.83 SMN1; SMN2 (0.57) NPSR1MAPK1HSP90AA1GAAPKM
SCHEMBL6706162 0.83 SMN1; SMN2 (0.57) NPSR1MAPK1HSP90AA1GAAPKM
SCHEMBL12994619 0.83 NPSR1 (0.47) NPSR1MAPK1HSP90AA1GAAPKM
SCHEMBL36568 0.82 NQO2 (0.43) NPSR1MAPK1HSP90AA1GAAPKM
SCHEMBL18658480 0.82 ACHE (0.47) NPSR1MAPK1HSP90AA1GAAPKM

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8062825-B2 Positive resist composition and resist pattern forming method TOKYO OHKA KOGYO CO., LTD. (JP) 2011-11-22 — — US disclosed
US-7687221-B2 Positive resist composition and resist pattern forming method TOKYO OHKA KOGYO CO., LTD. (JP) 2010-03-30 — — US disclosed
US-20090075177-A1 POSITIVE RESIST COMPOSITION AND RESIST PATTERN FORMING METHOD TOKYO OHKA KOGYO CO., LTD. (JP) 2009-03-19 — — US disclosed
US-20090047600-A1 high resolution pattern with reduced line edge roughness; increased alkali solubility under action of acid generator TOKYO OHKA KOGYO CO., LTD. (JP) 2009-02-19 — — US disclosed
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