SCHEMBL13496273

SCHEMBL13496273

NCCCC1CCC(CCCN)C(CCCN)C1

nearest known ligand 0.40

Predicted protein targets (top 1)

geneUniProtsupporting neighboursconfidence
▸ SIGMAR1 Q99720 1/20 0.40

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL11583982 0.90 SIGMAR1 (0.32) SIGMAR1
SCHEMBL11585190 0.87 SIGMAR1 (0.33) SIGMAR1
SCHEMBL10404951 0.81 INPP5A (0.30) —
SCHEMBL21686912 0.78 SIGMAR1 (0.44) SIGMAR1
SCHEMBL23493608 0.77 INPP5A (0.32) —
SCHEMBL2688337 0.77 — —
SCHEMBL22783594 0.77 NFKB1 (0.38) SIGMAR1
SCHEMBL24054 0.77 — —
SCHEMBL636867 0.77 SIGMAR1 (0.59) SIGMAR1
SCHEMBL4947401 0.75 SIGMAR1 (0.52) SIGMAR1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 20 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-10303058-B2 Pattern forming method, treating agent, electronic device, and method for manufacturing the same FUJIFILM CORPORATION (JP) 2019-05-28 — — US disclosed
US-9939729-B2 Resist pattern-forming method JSR CORPORATION (JP) 2018-04-10 — — US disclosed
US-9939729-B2 Resist pattern-forming method JSR CORPORATION (JP) 2018-04-10 — — US disclosed
US-9766547-B2 Pattern forming method, actinic ray-sensitive or radiation-sensitive resin composition, resist film, method of manufacturing electronic device using the same, and electronic device FUJIFILM CORPORATION (JP) 2017-09-19 — — US disclosed
US-9766547-B2 Pattern forming method, actinic ray-sensitive or radiation-sensitive resin composition, resist film, method of manufacturing electronic device using the same, and electronic device FUJIFILM CORPORATION (JP) 2017-09-19 — — US disclosed
US-9651863-B2 Pattern forming method, active light sensitive or radiation sensitive resin composition, resist film, method for manufacturing electronic device, and electronic device FUJIFILM CORPORATION (JP) 2017-05-16 — — US disclosed
US-9651863-B2 Pattern forming method, active light sensitive or radiation sensitive resin composition, resist film, method for manufacturing electronic device, and electronic device FUJIFILM CORPORATION (JP) 2017-05-16 — — US disclosed
US-20170075224-A1 RESIST PATTERN-FORMING METHOD JSR CORPORATION (JP) 2017-03-16 — — US disclosed
US-20170075224-A1 RESIST PATTERN-FORMING METHOD JSR CORPORATION (JP) 2017-03-16 — — US disclosed
US-20170059992-A1 RESIST PATTERN-FORMING METHOD AND CHEMICALLY AMPLIFIED RADIATION-SENSITIVE RESIN COMPOSITION JSR CORPORATION (JP) 2017-03-02 — — US disclosed
US-20170059992-A1 RESIST PATTERN-FORMING METHOD AND CHEMICALLY AMPLIFIED RADIATION-SENSITIVE RESIN COMPOSITION JSR CORPORATION (JP) 2017-03-02 — — US disclosed
US-20160327866-A1 PATTERN FORMING METHOD, TREATING AGENT, ELECTRONIC DEVICE, AND METHOD FOR MANUFACTURING THE SAME FUJIFILM CORPORATION (JP) 2016-11-10 — — US disclosed
US-20160327866-A1 PATTERN FORMING METHOD, TREATING AGENT, ELECTRONIC DEVICE, AND METHOD FOR MANUFACTURING THE SAME FUJIFILM CORPORATION (JP) 2016-11-10 — — US disclosed
US-20160195814-A1 PATTERN FORMATION METHOD, ELECTRONIC-DEVICE PRODUCTION METHOD, AND PROCESSING AGENT FUJIFILM CORPORATION (JP) 2016-07-07 — — US disclosed
US-20160195814-A1 PATTERN FORMATION METHOD, ELECTRONIC-DEVICE PRODUCTION METHOD, AND PROCESSING AGENT FUJIFILM CORPORATION (JP) 2016-07-07 — — US disclosed
US-20160041465-A1 PATTERN FORMING METHOD, ACTIVE LIGHT SENSITIVE OR RADIATION SENSITIVE RESIN COMPOSITION, RESIST FILM, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2016-02-11 — — US disclosed
US-20160041465-A1 PATTERN FORMING METHOD, ACTIVE LIGHT SENSITIVE OR RADIATION SENSITIVE RESIN COMPOSITION, RESIST FILM, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2016-02-11 — — US disclosed
US-20160011517-A1 PATTERN FORMING METHOD, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, METHOD OF MANUFACTURING ELECTRONIC DEVICE USING THE SAME, AND ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2016-01-14 — — US disclosed
US-20160011517-A1 PATTERN FORMING METHOD, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, METHOD OF MANUFACTURING ELECTRONIC DEVICE USING THE SAME, AND ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2016-01-14 — — US disclosed
US-20100028803-A1 SURFACE TREATING AGENT FOR RESIST PATTERN FORMATION, RESIST COMPOSITION, METHOD OF TREATING SURFACE OF RESIST PATTERN THEREWITH AND METHOD OF FORMING RESIST PATTERN FUJIFILM CORPORATION (JP) 2010-02-04 — — US disclosed
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