SCHEMBL1353073

SCHEMBL1353073

CCc1nccn1C(=O)O

nearest known ligand 0.43

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
ALPG P10696 2/20 0.41
PLAA Q9Y263 1/20 0.41
ALPL P05186 1/20 0.40
KMT2A Q03164 5/20 0.39
ALDH1A1 P00352 4/20 0.39
KDM4E B2RXH2 3/20 0.39
F2 P00734 1/20 0.39
LMNA P02545 1/20 0.39
HPGD P15428 1/20 0.39
MAPT P10636 2/20 0.38
FDPS P14324 2/20 0.37
PDE4A P27815 1/20 0.36
PDE4B Q07343 1/20 0.36
PDE4C Q08493 1/20 0.36
PDE4D Q08499 1/20 0.36
TSHR P16473 2/20 0.35
CA12 O43570 1/20 0.35
CA1 P00915 1/20 0.35
CA2 P00918 1/20 0.35
CA3 P07451 1/20 0.35

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
Ethane SCHEMBL27625282 0.98 ALPG (0.40) ALPGPLAAALPLKMT2AALDH1A1
SCHEMBL28151261 0.86 ALPG (0.40) ALPGPLAAALPLKMT2AALDH1A1
SCHEMBL1165647 0.86 ALPG (0.42) ALPGPLAAALPLKMT2AALDH1A1
SCHEMBL2288576 0.86 ALPG (0.42) ALPGPLAAALPLKMT2AALDH1A1
SCHEMBL28746087 0.84 ALPG (0.41) ALPGPLAAALPLKMT2AALDH1A1
SCHEMBL28701458 0.83 FDPS (0.39) ALPGPLAAALPLKMT2AALDH1A1
SCHEMBL1978411 0.82 AGTR1 (0.44) KMT2AALDH1A1KDM4ELMNAHPGD
SCHEMBL2427242 0.79 FDPS (0.43) ALPGPLAAALPLKMT2AALDH1A1
SCHEMBL2425586 0.79 SMN1; SMN2 (0.37) KMT2ALMNAFDPSTSHRMAPK1
SCHEMBL729229 0.79 AGTR1 (0.40) KMT2AALDH1A1LMNATSHRPOLB

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 32 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20260146026-A1 COMPOUND, COMPOSITION, CURED PRODUCT, METHOD FOR PRODUCING CURED PRODUCT, AND METHOD FOR PRODUCING ELECTRONIC COMPONENT ADEKA CORPORATION (JP) 2026-05-28 US disclosed
CN-122037094-A Block copolymer having cleavable main chain, photoresist composition comprising the same, and pattern forming method 杜邦电子材料国际有限责任公司 2026-05-15 CN disclosed
EP-4610254-A1 COMPOUND, COMPOSITION, CURED PRODUCT, METHOD FOR PRODUCING CURED PRODUCT, AND METHOD FOR PRODUCING ELECTRONIC COMPONENT ADEKA CORPORATION (JP) 2025-09-03 EP disclosed
CN-120019045-A Compound, composition, cured product, method for producing cured product, and method for producing electronic component 株式会社艾迪科 2025-05-16 CN disclosed
CN-114450375-B Adhesive composition 住友化学株式会社 2024-10-25 CN disclosed
US-20240352203-A1 FILM-FORMING MATERIAL FOR SEMICONDUCTOR, MEMBER-FORMING MATERIAL FOR SEMICONDUCTOR, PROCESS MEMBER-FORMING MATERIAL FOR SEMICONDUCTOR, UNDERLAYER FILM-FORMING MATERIAL, UNDERLAYER FILM, AND SEMICONDUCTOR DEVICE ADEKA CORPORATION (JP) 2024-10-24 US disclosed
US-20240302742-A1 PHOTORESIST COMPOSITION INCLUDING PHOTOSENSITIVE POLYMER AND METHOD OF MANUFACTURING INTEGRATED CIRCUIT DEVICE SAMSUNG ELECTRONICS CO., LTD. (KR) 2024-09-12 US disclosed
CN-118625595-A Nonionic non-chemically amplified photoresist composition comprising photosensitive polymer and method of manufacturing integrated circuit device 三星电子株式会社 2024-09-10 CN disclosed
US-20240241438-A1 PHOTORESIST COMPOSITION AND METHOD OF MANUFACTURING INTEGRATED CIRCUIT DEVICE BY USING THE SAME SAMSUNG ELECTRONICS CO., LTD. (KR) 2024-07-18 US disclosed
EP-4375750-A1 FILM-FORMING MATERIAL FOR SEMICONDUCTOR, MEMBER-FORMING MATERIAL FOR SEMICONDUCTOR, PROCESS MEMBER-FORMING MATERIAL FOR SEMICONDUCTOR, UNDERLAYER FILM-FORMING MATERIAL, UNDERLAYER FILM, AND SEMICONDUCTOR DEVICE ADEKA CORPORATION (JP) 2024-05-29 EP disclosed
CN-103186040-B The formation method of the outer coating combination of photoresist and electronic equipment ROHM AND HAAS ELECTRONIC MATERIALS CO., LTD. (US) 2015-08-19 CN disclosed
US-8835093-B2 Resist underlayer film forming composition containing silicon having anion group NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2014-09-16 US disclosed
US-8815494-B2 Resist underlayer film forming composition containing silicon having anion group NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2014-08-26 US disclosed
CN-103576458-A Photoresist composition and method of forming photolithographic pattern ROHM & HAAS ELECT MAT 2014-02-12 CN disclosed
CN-103186050-A Photolithographic method ROHM & HAAS ELECT MAT 2013-07-03 CN disclosed
CN-103186040-A Photoresist overcoat compositions and methods of forming electronic devices ROHM & HAAS ELECT MAT 2013-07-03 CN disclosed
US-20130078814-A1 RESIST UNDERLAYER FILM FORMING COMPOSITION CONTAINING SILICON HAVING ANION GROUP NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2013-03-28 US disclosed
US-20110287369-A1 RESIST UNDERLAYER FILM FORMING COMPOSITION CONTAINING SILICON HAVING ANION GROUP NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2011-11-24 US disclosed
EP-2372458-A1 SILICON-CONTAINING RESIST UNDERLAYER FILM FORMATION COMPOSITION HAVING ANION GROUP Nissan Chemical Industries, Ltd. (JP) 2011-10-05 EP disclosed
WO-2010134830-A1 TRITERPENOID DERIVATIVES USEFUL AS ANTIPROLIFERATIVE AGENTS UNIVERSIDADE DE COIMBRA (PT) 2010-11-25 WO disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (3 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20260146026-A1 COMPOUND, COMPOSITION, CURED PRODUCT, METHOD FOR PRODUCING CURED PRODUCT, AND METHOD FOR PRODUCING ELECTRONIC COMPONENT CBR3, CBR1, NOTUM ALPG 2377/4885PLAA 4180/4885ALPL 3931/4885
US-20240352203-A1 FILM-FORMING MATERIAL FOR SEMICONDUCTOR, MEMBER-FORMING MATERIAL FOR SEMICONDUCTOR, PROCESS MEMBER-FORMING MATERIAL FOR SEMICONDUCTOR, UNDERLAYER FILM-FORMING MATERIAL, UNDERLAYER FILM, AND SEMICONDUCTOR DEVICE FBXL19, SRSF9, CNOT9 ALPG 4213/4885PLAA 4386/4885ALPL 4648/4885
US-20110287369-A1 RESIST UNDERLAYER FILM FORMING COMPOSITION CONTAINING SILICON HAVING ANION GROUP SIK2, SRRM2, SRSF7 ALPG 1549/4885PLAA 2619/4885ALPL 2535/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.