SCHEMBL13564264

SCHEMBL13564264

CC1(Oc2ccccc2)CCCC1

nearest known ligand 0.45

Predicted protein targets (top 5)

geneUniProtsupporting neighboursconfidence
DRD2 P14416 7/20 0.45
CA4 P22748 1/20 0.39
SLC6A4 P31645 1/20 0.37
LTA4H P09960 1/20 0.36
TSHR P16473 1/20 0.36

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL13672476 0.98 DRD2 (0.44) DRD2CA4SLC6A4
Phenol SCHEMBL28085395 0.90 CA4 (0.41) DRD2CA4SLC6A4LTA4H
SCHEMBL17848479 0.81 OPRM1 (0.45) DRD2LTA4HTSHR
SCHEMBL24595919 0.80 ACHE (0.41) DRD2TSHR
Hydrochloric Acid SCHEMBL17848511 0.79 OPRM1 (0.44) DRD2LTA4HTSHR
SCHEMBL1836787 0.78 ESR2 (0.43) DRD2CA4SLC6A4LTA4H
SCHEMBL18477985 0.78 POLB (0.40) DRD2TSHR
SCHEMBL29050867 0.78 DRD2 (0.50) DRD2SLC6A4
SCHEMBL3452545 0.77 CYP19A1 (0.32) DRD2
SCHEMBL18372581 0.77 DRD2 (0.49) DRD2SLC6A4

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 76 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20230244149-A1 COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-08-03 US disclosed
US-20230244149-A1 COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-08-03 US disclosed
US-20210026246-A1 COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2021-01-28 US disclosed
US-20190258160-A1 RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2019-08-22 US disclosed
US-20180081272-A1 THERMAL CROSSLINKING ACCELERATOR, POLYSILOXANE-CONTAINING RESIST UNDERLAYER FILM FORMING COMPOSITION CONTAINING SAME, AND PATTERNING PROCESS USING SAME SHIN-ETSU CHEMICAL CO., LTD. (JP) 2018-03-22 US disclosed
US-20180081272-A1 THERMAL CROSSLINKING ACCELERATOR, POLYSILOXANE-CONTAINING RESIST UNDERLAYER FILM FORMING COMPOSITION CONTAINING SAME, AND PATTERNING PROCESS USING SAME SHIN-ETSU CHEMICAL CO., LTD. (JP) 2018-03-22 US disclosed
US-9902875-B2 Composition for forming a coating type BPSG film, substrate, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2018-02-27 US disclosed
US-9902875-B2 Composition for forming a coating type BPSG film, substrate, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2018-02-27 US disclosed
US-9880470-B2 Composition for forming a coating type silicon-containing film, substrate, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2018-01-30 US disclosed
US-9880470-B2 Composition for forming a coating type silicon-containing film, substrate, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2018-01-30 US disclosed
EP-2657766-A1 Patterning process Shin-Etsu Chemical Co., Ltd. (JP) 2013-10-30 EP disclosed
EP-2657767-A1 Patterning process Shin-Etsu Chemical Co., Ltd. (JP) 2013-10-30 EP disclosed
US-20130210236-A1 SILICON-CONTAINING SURFACE MODIFIER, RESIST UNDERLAYER FILM COMPOSITION CONTAINING THIS, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-08-15 US disclosed
US-20130210236-A1 SILICON-CONTAINING SURFACE MODIFIER, RESIST UNDERLAYER FILM COMPOSITION CONTAINING THIS, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-08-15 US disclosed
US-20130137041-A1 SILICON-CONTAINING RESIST UNDERLAYER FILM-FORMING COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-05-30 US disclosed
US-20130137041-A1 SILICON-CONTAINING RESIST UNDERLAYER FILM-FORMING COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-05-30 US disclosed
US-20130005150-A1 COMPOSITION FOR FORMING RESIST UNDERLAYER FILM AND PATTERNING PROCESS USING THE SAME SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-01-03 US disclosed
US-20130005150-A1 COMPOSITION FOR FORMING RESIST UNDERLAYER FILM AND PATTERNING PROCESS USING THE SAME SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-01-03 US disclosed
US-20120276483-A1 PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-11-01 US disclosed
US-20120276483-A1 PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-11-01 US disclosed