SCHEMBL1357941

SCHEMBL1357941

C=CC(=O)OCC1(c2ccccc2)CCO1

nearest known ligand 0.43

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
THRB P10828 1/20 0.43
GAA P10253 1/20 0.39
TSHR P16473 2/20 0.38
KMT2A Q03164 3/20 0.37
TET3 O43151 1/20 0.37
FBXL19 Q6PCT2 1/20 0.37
CXXC5 Q7LFL8 1/20 0.37
TET1 Q8NFU7 1/20 0.37
KDM2B Q8NHM5 1/20 0.37
CXXC4 Q9H2H0 1/20 0.37
KDM2A Q9Y2K7 1/20 0.37
OPRM1 P35372 4/20 0.36
CYP2C19 P33261 2/20 0.34
LMNA P02545 2/20 0.34
ALDH1A1 P00352 2/20 0.33
MEN1 O00255 2/20 0.33
L3MBTL1 Q9Y468 1/20 0.33
CYP1A2 P05177 1/20 0.33
CYP3A4 P08684 1/20 0.33
CYP2D6 P10635 1/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL1357280 0.86 THRB (0.48) THRBGAATSHRKMT2ATET3
SCHEMBL245007 0.83 GAA (0.40) GAATSHROPRM1CYP2C19LMNA
SCHEMBL241655 0.80 GAA (0.41) GAATSHROPRM1CYP2C19LMNA
SCHEMBL28550901 0.78 KMT2A (0.39) THRBGAATSHRKMT2ATET3
SCHEMBL1357135 0.77 THRB (0.45) THRBGAATSHRKMT2ATET3
SCHEMBL28357984 0.73 THRB (0.43) THRBGAAKMT2ATET3FBXL19
SCHEMBL28226362 0.72 THRB (0.44) THRBGAATSHRKMT2ATET3
SCHEMBL18456901 0.71 THRB (0.43) THRBGAATSHRKMT2ATET3
SCHEMBL1357657 0.70 THRB (0.49) THRBGAATSHRKMT2ATET3
SCHEMBL243069 0.70 GAA (0.41) GAATSHROPRM1CYP2C19LMNA

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 1 patent. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20110281040-A1 LIQUID CRYSTAL DISPLAY ELEMENT, POSITIVE TYPE RADIATION SENSITIVE COMPOSITION, INTERLAYER INSULATING FILM FOR LIQUID CRYSTAL DISPLAY ELEMENT, AND FORMATION METHOD THEREOF JSR CORPORATION (JP) 2011-11-17 US disclosed