SCHEMBL13609953

SCHEMBL13609953

CC(C)(C1CCC(c2ccc(O)cc2)C(c2ccc(O)cc2)C1)C1CCC(c2ccc(O)cc2)C(c2ccc(O)cc2)C1

nearest known ligand 0.42

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
▸ KDM1A O60341 2/20 0.42
▸ ESR2 Q92731 12/20 0.39
▸ ACHE P22303 1/20 0.36
▸ SHBG P04278 1/20 0.35
▸ MDM2 Q00987 1/20 0.34
▸ ESR1 P03372 6/20 0.33
▸ CYP3A4 P08684 2/20 0.33
▸ LMNA P02545 1/20 0.33
▸ TYR P14679 1/20 0.33
▸ AR P10275 1/20 0.33
▸ HPGD P15428 1/20 0.33
▸ TSHR P16473 1/20 0.33
▸ SLC6A2 P23975 1/20 0.33
▸ SLC6A4 P31645 1/20 0.33
▸ HTR6 P50406 1/20 0.33
▸ ESRRG P62508 1/20 0.33
▸ SLC6A3 Q01959 1/20 0.33
▸ HSD17B10 Q99714 1/20 0.33
▸ CYP2C9 P11712 1/20 0.33
▸ HDAC2 Q92769 1/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL16313399 0.85 SHBG (0.33) KDM1AESR2SHBG
SCHEMBL9861782 0.76 ESR2 (0.41) KDM1AESR2ACHEESR1CYP3A4
SCHEMBL4147450 0.76 ESR2 (0.62) ESR2ESR1CYP3A4CYP2C9HDAC2
SCHEMBL9135013 0.73 KDM1A (0.60) KDM1AESR2ACHEESR1CYP3A4
SCHEMBL9135017 0.73 KDM1A (0.60) KDM1AESR2ACHEESR1CYP3A4
SCHEMBL1005966 0.72 ACHE (0.47) KDM1AESR2ACHESHBGESR1
SCHEMBL9815720 0.70 SLC18A3 (0.47) KDM1ACYP3A4LMNAHPGDSLC6A2
SCHEMBL16000745 0.70 ESR2 (0.54) KDM1AESR2ACHEESR1CYP3A4
SCHEMBL1983886 0.69 KDM1A (0.50) KDM1AESR2ESR1CYP3A4CYP2C9
SCHEMBL11865942 0.69 ESR2 (0.52) KDM1AESR2ESR1CYP3A4CYP2C9

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-7615331-B2 Photosensitive resin composition, production method of cured relief pattern using the same and semiconductor device FUJIFILM CORPORATION (JP) 2009-11-10 — — US disclosed
US-7615331-B2 Photosensitive resin composition, production method of cured relief pattern using the same and semiconductor device FUJIFILM CORPORATION (JP) 2009-11-10 — — US disclosed
US-20080081294-A1 PHOTOSENSITIVE RESIN COMPOSITION, PRODUCTION METHOD OF CURED RELIEF PATTERN USING THE SAME AND SEMICONDUCTOR DEVICE FUJIFILM CORPORATION (JP) 2008-04-03 — — US disclosed
US-20080081294-A1 PHOTOSENSITIVE RESIN COMPOSITION, PRODUCTION METHOD OF CURED RELIEF PATTERN USING THE SAME AND SEMICONDUCTOR DEVICE FUJIFILM CORPORATION (JP) 2008-04-03 — — US disclosed
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