SCHEMBL13829296

SCHEMBL13829296

CCC(C)(C)C(=O)OC1COC2C(OCOCC(C)(C)C)COC12

nearest known ligand 0.40

Predicted protein targets (top 3)

geneUniProtsupporting neighboursconfidence
BCHE P06276 15/20 0.39
KLK7 P49862 3/20 0.33
KLK5 Q9Y337 2/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL15978093 1.00 BCHE (0.39) BCHEKLK7KLK5
SCHEMBL14616373 0.91 BCHE (0.38) BCHEKLK7KLK5
SCHEMBL14617360 0.85 BCHE (0.41) BCHEKLK7KLK5
SCHEMBL14616335 0.84
SCHEMBL14769030 0.83 BCHE (0.36) BCHEKLK7KLK5
SCHEMBL14616260 0.81
SCHEMBL14616287 0.81 BCHE (0.34) BCHEKLK7KLK5
SCHEMBL14616311 0.80 BCHE (0.34) BCHEKLK7
SCHEMBL15043152 0.80 KLK7 (0.38) BCHEKLK7KLK5
SCHEMBL14616378 0.80 BCHE (0.37) BCHEKLK7KLK5

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 24 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20170226250-A1 POLYMER, RESIST COMPOSITION, AND PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-08-10 US disclosed
US-9519213-B2 Patterning process and resist composition SHIN-ETSU CHEMICAL CO., LTD. (JP) 2016-12-13 US disclosed
US-20160229940-A1 POLYMER, RESIST COMPOSITION, AND PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2016-08-11 US disclosed
US-20160168296-A1 POLYMER, RESIST COMPOSITION, AND PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2016-06-16 US disclosed
US-9213235-B2 Patterning process, resist composition, polymer, and monomer SHIN-ETSU CHEMICAL CO., LTD. (JP) 2015-12-15 US disclosed
US-9182668-B2 Patterning process, resist composition, polymer, and monomer SHIN-ETSU CHEMICAL CO., LTD. (JP) 2015-11-10 US disclosed
US-9086624-B2 Monomer, polymer, resist composition, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2015-07-21 US disclosed
US-9017931-B2 Patterning process and resist composition SHIN-ETSU CHEMICAL CO., LTD. (JP) 2015-04-28 US disclosed
US-8999630-B2 Patterning process and resist composition SHIN-ETSU CHEMICAL CO., LTD. (JP) 2015-04-07 US disclosed
US-20140308614-A1 PATTERNING PROCESS, RESIST COMPOSITION, POLYMER, AND MONOMER SHIN-ETSU CHEMICAL CO., LTD. (JP) 2014-10-16 US disclosed
US-8790866-B2 Patterning process and resist composition SHIN-ETSU CHEMICAL CO., LTD. (JP) 2014-07-29 US disclosed
US-20140051026-A1 PATTERNING PROCESS AND RESIST COMPOSITION SHIN-ETSU CHEMICAL CO., LTD. (JP) 2014-02-20 US disclosed
US-20140045123-A1 MONOMER, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2014-02-13 US disclosed
US-20130130177-A1 NEGATIVE PATTERN FORMING PROCESS AND NEGATIVE RESIST COMPOSITION SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-05-23 US disclosed
US-20130108960-A1 PATTERNING PROCESS AND RESIST COMPOSITION SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-05-02 US disclosed
US-20130065183-A1 PATTERNING PROCESS AND RESIST COMPOSITION SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-03-14 US disclosed
US-20130052587-A1 PATTERNING PROCESS AND RESIST COMPOSITION SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-02-28 US disclosed
US-20130017484-A1 POLYMERIZABLE ESTER COMPOUND, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-01-17 US disclosed
US-20130017492-A1 PATTERNING PROCESS AND RESIST COMPOSITION SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-01-17 US disclosed
US-20120288796-A1 RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-11-15 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (2 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20130017484-A1 POLYMERIZABLE ESTER COMPOUND, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS RER1, DOT1L, H1-0 BCHE 3851/4885KLK7 3173/4885KLK5 3755/4885
US-20140045123-A1 MONOMER, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS MMAB, PARG, DNMT3A BCHE 3414/4885KLK7 3692/4885KLK5 4284/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.