SCHEMBL13869082

SCHEMBL13869082

Cc1cccc(OS(=O)(=O)C(F)(F)C(F)(F)C(F)(F)S)c1

nearest known ligand 0.44

Predicted protein targets (top 18)

geneUniProtsupporting neighboursconfidence
PPARG P37231 1/20 0.44
ACHE P22303 1/20 0.42
L3MBTL1 Q9Y468 3/20 0.41
HTT P42858 1/20 0.41
TDP1 Q9NUW8 1/20 0.41
LMNA P02545 2/20 0.40
PTGS1 P23219 1/20 0.38
NPSR1 Q6W5P4 2/20 0.37
GAA P10253 1/20 0.37
F2 P00734 1/20 0.37
CA1 P00915 2/20 0.37
CA2 P00918 2/20 0.37
CA9 Q16790 1/20 0.37
AR P10275 1/20 0.37
MAPK1 P28482 1/20 0.36
ALDH1A1 P00352 1/20 0.36
SDHB P21912 1/20 0.35
HPGD P15428 1/20 0.35

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL2618584 0.85 PPARG (0.43) PPARGACHEL3MBTL1HTTTDP1
SCHEMBL167959 0.82 PPARG (0.54) PPARGACHEL3MBTL1HTTTDP1
Iodide SCHEMBL8736405 0.80 PPARG (0.53) PPARGACHEL3MBTL1HTTTDP1
SCHEMBL19568043 0.74 PPARG (0.53) PPARGACHEL3MBTL1HTTTDP1
SCHEMBL16743488 0.74 KDM4E (0.48) PPARGACHEL3MBTL1HTTTDP1
SCHEMBL3884174 0.74 ACHE (0.56) PPARGACHEL3MBTL1HTTTDP1
SCHEMBL29468643 0.74 ACHE (0.56) PPARGACHEL3MBTL1HTTTDP1
SCHEMBL15086987 0.73 PPARG (0.46) PPARGACHEL3MBTL1HTTTDP1
SCHEMBL22517172 0.73 CA2 (0.34) CA1CA2CA9
SCHEMBL4599461 0.72 PPARG (0.58) PPARGACHEL3MBTL1HTTTDP1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 1 patent. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-7531287-B2 Suitable to liquid immersion exposure capable of suppressing the formation of development defects and scums, with preferably less leaching of resist ingredients to the liquid immersion solution upon pattern formation by liquid immersion exposure FUJIFILM CORPORATION (JP) 2009-05-12 US disclosed