SCHEMBL668727

SCHEMBL668727

[Cu].[Cu].[Cu].[N-3].[N-3].[N-3].[N-3].[N-3].[Ta+5].[Ta+5].[Ta+5]

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL611428 1.00
SCHEMBL5858664 0.87
SCHEMBL9565122 0.82
SCHEMBL33275 0.82
SCHEMBL139003 0.82
SCHEMBL3467470 0.82
SCHEMBL5434695 0.67
SCHEMBL4368546 0.67
SCHEMBL1796527 0.67
SCHEMBL2539870 0.67

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 33 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-115820127-A Chemical mechanical polishing solution suitable for copper-cobalt interconnection structure and preparation method thereof 上海交通大学 2023-03-21 CN disclosed
CN-112420849-A Metal oxide thin film transistor and manufacturing method thereof 昆山龙腾光电股份有限公司 2021-02-26 CN disclosed
CN-105448925-B Semiconductor structure and manufacturing method thereof 旺宏电子股份有限公司 2018-06-22 CN disclosed
CN-105448925-A Semiconductor structure and manufacturing method thereof MACRONIX INT CO LTD 2016-03-30 CN disclosed
US-9299765-B2 Altering capacitance of MIM capacitor having reactive layer therein GLOBALFOUNDRIES INC. (KY) 2016-03-29 US disclosed
US-20150221717-A1 ALTERING CAPACITANCE OF MIM CAPACITOR HAVING REACTIVE LAYER THEREIN GLOBALFOUNDRIES U.S. INC. 2015-08-06 US disclosed
US-9013857-B2 Altering capacitance of MIM capacitor having reactive layer therein INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2015-04-21 US disclosed
US-8710478-B2 Nonvolatile semiconductor storage device and a manufacturing method thereof RENESAS ELECTRONICS CORPORATION (JP) 2014-04-29 US disclosed
US-20130107416-A1 ALTERING CAPACITANCE OF MIM CAPACITOR HAVING REACTIVE LAYER THEREIN INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2013-05-02 US disclosed
US-8363379-B2 Altering capacitance of MIM capacitor having reactive layer therein INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2013-01-29 US disclosed
US-20030127107-A1 Apparatus and method for removing coating layers from alignment marks TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. 2003-07-10 US disclosed
US-6541384-B1 Method of initiating cooper CMP process APPLIED MATERIALS, INC. 2003-04-01 US disclosed
WO-2003007348-A2 APPARATUS AND METHOD FOR CONTROLLING GALVANIC CORROSION EFFECTS ON A SINGLE-WAFER CLEANING SYSTEM LAM RESEARCH CORPORATION (US) 2003-01-23 WO disclosed
US-20030010361-A1 Apparatus and method for controlling galvanic corrosion effects on a single-wafer cleaning system LAM RESEARCH CORPORATION 2003-01-16 US disclosed
US-6498386-B2 Cylindrical semiconductor capacitor CHARTERED SEMICONDUCTOR MANUFACTURING, INC. 2002-12-24 US disclosed
WO-2002020682-A2 METHOD OF INITIATING COPPER CMP PROCESS APPLIED MATERIALS, INC. (US) 2002-03-14 WO disclosed
US-20020024778-A1 Spin valve films with improved cap layers SEAGATE TECHNOLOGY LLC 2002-02-28 US disclosed
US-20010026002-A1 Cylindrical semiconductor capacitor CHARTERED SEMICONDUCTOR MANUFACTURING LTD. (SG) 2001-10-04 US disclosed
US-6265280-B1 Method for manufacturing a cylindrical semiconductor capacitor CHARTERED SEMICONDUCTOR MANUFACTURING, INC. 2001-07-24 US disclosed
US-6265280-B1 Method for manufacturing a cylindrical semiconductor capacitor CHARTERED SEMICONDUCTOR MANUFACTURING, INC. 2001-07-24 US disclosed