⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL6301067 | 1.00 | — | — | |
| SCHEMBL5772075 | 0.87 | — | — | |
| SCHEMBL701479 | 0.87 | — | — | |
| SCHEMBL18427899 | 0.87 | — | — | |
| SCHEMBL16303 | 0.82 | — | — | |
| SCHEMBL2180089 | 0.82 | — | — | |
| SCHEMBL9565122 | 0.82 | — | — | |
| SCHEMBL8201124 | 0.82 | — | — | |
| SCHEMBL7903268 | 0.82 | — | — | |
| SCHEMBL139003 | 0.82 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 172 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-10727406-B2 | CEM switching device | ARM LIMITED (GB) | 2020-07-28 | — | — | US | claimed |
| US-20190058118-A1 | CEM SWITCHING DEVICE | ARM LIMITED (GB) | 2019-02-21 | — | — | US | claimed |
| US-10002834-B2 | Method and apparatus for protecting metal interconnect from halogen based precursors | APPLIED MATERIALS, INC. (US) | 2018-06-19 | — | — | US | claimed |
| WO-2016144433-A1 | METHOD AND APPARATUS FOR PROTECTING METAL INTERCONNECT FROM HALOGEN BASED PRECURSORS | APPLIED MATERIALS, INC. (US) | 2016-09-15 | — | — | WO | claimed |
| US-20160268207-A1 | METHOD AND APPARATUS FOR PROTECTING METAL INTERCONNECT FROM HALOGEN BASED PRECURSORS | APPLIED MATERIALS, INC. | 2016-09-15 | — | — | US | claimed |
| US-8901530-B2 | Nonvolatile memory device using a tunnel oxide as a passive current steering element | SANDISK 3D LLC (US) | 2014-12-02 | — | — | US | claimed |
| US-8895949-B2 | Nonvolatile memory device using a varistor as a current limiter element | SANDISK 3D LLC (US) | 2014-11-25 | — | — | US | claimed |
| US-20140166969-A1 | NONVOLATILE MEMORY DEVICE USING A TUNNEL OXIDE AS A PASSIVE CURRENT STEERING ELEMENT | KABUSHIKI KAISHA TOSHIBA (JP) | 2014-06-19 | — | — | US | claimed |
| US-20140151625-A1 | NONVOLATILE MEMORY DEVICE USING A VARISTOR AS A CURRENT LIMITER ELEMENT | KABUSHIKI KAISHA TOSHIBA (JP) | 2014-06-05 | — | — | US | claimed |
| US-8735864-B2 | Nonvolatile memory device using a tunnel nitride as a current limiter element | INTERMOLECULAR, INC. (US) | 2014-05-27 | — | — | US | claimed |
| WO-2013109954-A2 | NONVOLATILE MEMORY DEVICE USING A TUNNEL OXIDE AS A PASSIVE CURRENT STEERING ELEMENT | KABUSHIKI KAISHA TOSHIBA (JP) | 2013-07-25 | — | — | WO | claimed |
| US-20130187110-A1 | NONVOLATILE MEMORY DEVICE USING A TUNNEL OXIDE AS A CURRENT LIMITER ELEMENT | INTERMOLECULAR, INC. (US) | 2013-07-25 | — | — | US | claimed |
| US-7067862-B2 | Conductive memory device with conductive oxide electrodes | UNITY SEMICONDUCTOR CORPORATION | 2006-06-27 | — | — | US | claimed |
| US-7045071-B2 | Method for fabricating ferroelectric random access memory device | HYNIX SEMICONDUCTOR INC. (KR) | 2006-05-16 | — | — | US | claimed |
| US-7042035-B2 | Memory array with high temperature wiring | UNITY SEMICONDUCTOR CORPORATION | 2006-05-09 | — | — | US | claimed |
| US-20040159868-A1 | Conductive memory device with barrier electrodes | UNITY SEMICONDUCTOR, INC. | 2004-08-19 | — | — | US | claimed |
| US-20040159869-A1 | Memory array with high temperature wiring | UNITY SEMICONDUCTOR CORPORATION | 2004-08-19 | — | — | US | claimed |
| US-20040147123-A1 | Chemical mechanical polishing slurry for ruthenium titanium nitride and polishing process using the same | HYNIX SEMICONDUCTOR INC. | 2004-07-29 | — | — | US | claimed |
| US-20040129670-A1 | Method for fabricating ferroelectric random access memory device | HYNIX SEMICONDUCTOR INC. (KR) | 2004-07-08 | — | — | US | claimed |
| US-20030003747-A1 | Slurry of ceric ammonium nitrate ((NH4)2Ce(NO3)6) providing improved polishing speed under low pressure in one step; deposited as a barrier film for a capacitor using barium strontium titanate as a dielectric layer; semiconductors | HYNIX SEMICONDUCTOR INC. (KR) | 2003-01-02 | — | — | US | claimed |