⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL570004 | 1.00 | — | — | |
| SCHEMBL5772075 | 0.87 | — | — | |
| SCHEMBL701479 | 0.87 | — | — | |
| SCHEMBL18427899 | 0.87 | — | — | |
| SCHEMBL16303 | 0.82 | — | — | |
| SCHEMBL2180089 | 0.82 | — | — | |
| SCHEMBL9565122 | 0.82 | — | — | |
| SCHEMBL8201124 | 0.82 | — | — | |
| SCHEMBL7903268 | 0.82 | — | — | |
| SCHEMBL139003 | 0.82 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 23 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-6596643-B2 | CVD TiSiN barrier for copper integration | APPLIED MATERIALS, INC. | 2003-07-22 | — | — | US | claimed |
| US-20030022507-A1 | CVD TiSiN barrier for copper integration | APPLIED MATERIALS, INC. | 2003-01-30 | — | — | US | claimed |
| WO-2002091437-A2 | TISIN BARRIER FORMATION WITH TREATMENT IN N2/H2 PLASMA AND IN SILANE | APPLIED MATERIALS, INC. (US) | 2002-11-14 | — | — | WO | claimed |
| CN-112420849-A | Metal oxide thin film transistor and manufacturing method thereof | 昆山龙腾光电股份有限公司 | 2021-02-26 | — | — | CN | disclosed |
| CN-108473311-A | Synthesis and treatment of Q-carbon and Q-BN, and direct conversion of carbon to diamond, BN and C-BN | 北卡罗莱纳州立大学 | 2018-08-31 | — | — | CN | disclosed |
| US-9627406-B1 | Memory cell including electret and random access memory thereof | THE UNITED STATES OF AMERICA, AS REPRESENTED BY THE SECRETARY OF COMMERCE (US) | 2017-04-18 | — | — | US | disclosed |
| US-20170092652-A1 | MEMORY CELL INCLUDING ELECTRET AND RANDOM ACCESS MEMORY THEREOF | GOVERNMENT OF THE UNITED STATES OF AMERICA, AS REPRESENTED BY THE SECRETARY OF COMMERCE, THE NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY | 2017-03-30 | — | — | US | disclosed |
| US-8501621-B2 | Method of fabrication of the memristive device | MICROXACT, INC. (US) | 2013-08-06 | — | — | US | disclosed |
| US-20120202334-A1 | METHOD OF FABRICATION OF THE MEMRISTIVE DEVICE | AFRL/RIJ | 2012-08-09 | — | — | US | disclosed |
| US-6958296-B2 | CVD TiSiN barrier for copper integration | APPLIED MATERIALS, INC. (US) | 2005-10-25 | — | — | US | disclosed |
| US-6958296-B2 | CVD TiSiN barrier for copper integration | APPLIED MATERIALS, INC. (US) | 2005-10-25 | — | — | US | disclosed |
| US-6596643-B2 | CVD TiSiN barrier for copper integration | APPLIED MATERIALS, INC. | 2003-07-22 | — | — | US | disclosed |
| US-6583070-B1 | Semiconductor device having a low dielectric constant material | ADVANCED MICRO DEVICES, INC. | 2003-06-24 | — | — | US | disclosed |
| WO-2002091437-A3 | TISIN BARRIER FORMATION WITH TREATMENT IN N2/H2 PLASMA AND IN SILANE | APPLIED MATERIALS INC (US) | 2003-03-20 | — | — | WO | disclosed |
| US-20030022507-A1 | CVD TiSiN barrier for copper integration | APPLIED MATERIALS, INC. | 2003-01-30 | — | — | US | disclosed |
| US-20030022507-A1 | CVD TiSiN barrier for copper integration | APPLIED MATERIALS, INC. | 2003-01-30 | — | — | US | disclosed |
| WO-2002091437-A2 | TISIN BARRIER FORMATION WITH TREATMENT IN N2/H2 PLASMA AND IN SILANE | APPLIED MATERIALS, INC. (US) | 2002-11-14 | — | — | WO | disclosed |
| WO-2002091437-A2 | TISIN BARRIER FORMATION WITH TREATMENT IN N2/H2 PLASMA AND IN SILANE | APPLIED MATERIALS, INC. (US) | 2002-11-14 | — | — | WO | disclosed |
| US-6217418-B1 | Polishing pad and method for polishing porous materials | ADVANCED MICRO DEVICES, INC. | 2001-04-17 | — | — | US | disclosed |
| US-6208030-B1 | Semiconductor device having a low dielectric constant material | ADVANCED MICRO DEVICES, INC. | 2001-03-27 | — | — | US | disclosed |