⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL14150408 | 0.82 | — | — | |
| SCHEMBL28579252 | 0.78 | EPHX1 (0.33) | — | |
| SCHEMBL57189 | 0.73 | — | — | |
| SCHEMBL14150231 | 0.73 | SMN1; SMN2 (0.49) | — | |
| SCHEMBL111511 | 0.72 | — | — | |
| SCHEMBL28476760 | 0.71 | CA2 (0.41) | — | |
| SCHEMBL11741706 | 0.71 | — | — | |
| SCHEMBL18940534 | 0.70 | — | — | |
| SCHEMBL190730 | 0.70 | — | — | |
| SCHEMBL10891054 | 0.70 | LMNA (0.31) | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 22 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-112947000-A | Composition for forming silicon-containing EUV resist underlayer film containing sulfonic acid/salt | 日产化学工业株式会社 | 2021-06-11 | — | — | CN | disclosed |
| US-20210116813-A1 | COMPOSITION FOR RESIST UNDERLAYER FILM FORMATION, UNDERLAYER FILM FOR LITHOGRAPHY, AND PATTERN FORMATION METHOD | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2021-04-22 | — | — | US | disclosed |
| EP-3786710-A1 | RESIST UNDERLAYER FILM-FORMING COMPOSITION, UNDERLAYER FILM FOR LITHOGRAPHY, AND PATTERN FORMATION METHOD | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2021-03-03 | — | — | EP | disclosed |
| CN-112005168-A | Resist underlayer film forming composition, underlayer film for lithography, and pattern forming method | 三菱瓦斯化学株式会社 | 2020-11-27 | — | — | CN | disclosed |
| US-10613440-B2 | Silicon-containing EUV resist underlayer film-forming composition containing onium sulfonate | NISSAN CHEMICAL INDUSTRIES, LTD. (JP) | 2020-04-07 | — | — | US | disclosed |
| US-10079146-B2 | Resist underlayer film forming composition containing silicon containing cyclic organic group having hetero atom | NISSAN CHEMICAL INDUSTRIES, LTD. (JP) | 2018-09-18 | — | — | US | disclosed |
| US-9524871-B2 | Silicon-containing resist underlayer film-forming composition having sulfone structure | NISSAN CHEMICAL INDUSTRIES, LTD. (JP) | 2016-12-20 | — | — | US | disclosed |
| US-9494862-B2 | Resist underlayer film forming composition containing silicon having sulfone structure and amine structure | NISSAN CHEMICAL INDUSTRIES, LTD. (JP) | 2016-11-15 | — | — | US | disclosed |
| US-9291900-B2 | Composition for forming resist underlayer film, containing silicon that bears diketone-structure-containing organic group | NISSAN CHEMICAL INDUSTRIES, LTD. (JP) | 2016-03-22 | — | — | US | disclosed |
| US-20150249012-A1 | RESIST UNDERLAYER FILM FORMING COMPOSITION CONTAINING SILICON CONTAINING CYCLIC ORGANIC GROUP HAVING HETERO ATOM | NISSAN CHEMICAL INDUSTRIES, LTD. (JP) | 2015-09-03 | — | — | US | disclosed |
| US-20150159045-A1 | RESIST UNDERLAYER FILM FORMING COMPOSITION CONTAINING SILICON HAVING SULFONE STRUCTURE AND AMINE STRUCTURE | NISSAN CHEMICAL INDUSTRIES, LTD. (JP) | 2015-06-11 | — | — | US | disclosed |
| EP-2881794-A1 | COMPOSITION FOR FORMING UNDERLAYER FILM FOR SILICON-CONTAINING EUV RESIST AND CONTAINING ONIUM SULFONATE | Nissan Chemical Industries, Ltd. (JP) | 2015-06-10 | — | — | EP | disclosed |
| US-9023588-B2 | Resist underlayer film forming composition containing silicon having nitrogen-containing ring | NISSAN CHEMICAL INDUSTRIES, LTD. (JP) | 2015-05-05 | — | — | US | disclosed |
| US-20140170855-A1 | SILICON-CONTAINING RESIST UNDERLAYER FILM-FORMING COMPOSITION HAVING SULFONE STRUCTURE | NISSAN CHEMICAL INDUSTRIES, LTD. (JP) | 2014-06-19 | — | — | US | disclosed |
| EP-2735904-A1 | THIN FILM FORMATION COMPOSITION FOR LITHOGRAPHY WHICH CONTAINS TITANIUM AND SILICON | Nissan Chemical Industries, Ltd. (JP) | 2014-05-28 | — | — | EP | disclosed |
| US-20140120730-A1 | THIN FILM FORMING COMPOSITION FOR LITHOGRAPHY CONTAINING TITANIUM AND SILICON | NISSAN CHEMICAL INDUSTRIES, LTD. (JP) | 2014-05-01 | — | — | US | disclosed |
| EP-2669737-A1 | COMPOSITION FOR FORMING RESIST UNDERLAYER FILMS, CONTAINING SILICON THAT BEARS DIKETONE-STRUCTURE-CONTAINING ORGANIC GROUP | Nissan Chemical Industries, Ltd. (JP) | 2013-12-04 | — | — | EP | disclosed |
| US-20130302991-A1 | COMPOSITION FOR FORMING RESIST UNDERLAYER FILM, CONTAINING SILICON THAT BEARS DIKETONE-STRUCTURE-CONTAINING ORGANIC GROUP | NISSAN CHEMICAL INDUSTRIES, LTD. (JP) | 2013-11-14 | — | — | US | disclosed |
| EP-2538276-A1 | COMPOSITION FOR FORMATION OF RESIST UNDERLAYER FILM CONTAINING SILICON HAVING NITROGEN-CONTAINING RING | Nissan Chemical Industries, Ltd. (JP) | 2012-12-26 | — | — | EP | disclosed |
| US-20120315765-A1 | RESIST UNDERLAYER FILM FORMING COMPOSITION CONTAINING SILICON HAVING NITROGEN-CONTAINING RING | NISSAN CHEMICAL INDUSTRIES, LTD. (JP) | 2012-12-13 | — | — | US | disclosed |