SCHEMBL142900

SCHEMBL142900

CCC(OC)C(C)COC(C)=O

nearest known ligand 0.41

Predicted protein targets (top 6)

geneUniProtsupporting neighboursconfidence
TDP1 Q9NUW8 1/20 0.41
ALDH1A1 P00352 3/20 0.39
LMNA P02545 1/20 0.39
HSD17B10 Q99714 1/20 0.39
TSHR P16473 3/20 0.33
ALOX15 P16050 1/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL15250900 0.81 ALDH1A1 (0.48) TDP1ALDH1A1LMNAHSD17B10TSHR
SCHEMBL13034086 0.81 ALDH1A1 (0.48) TDP1ALDH1A1LMNAHSD17B10TSHR
SCHEMBL11618596 0.80 ALDH1A1 (0.50) TDP1ALDH1A1LMNAHSD17B10TSHR
SCHEMBL12800030 0.78 TDP1 (0.58) TDP1ALDH1A1LMNAHSD17B10TSHR
SCHEMBL28688624 0.78 TDP1 (0.47) TDP1ALDH1A1LMNAHSD17B10TSHR
SCHEMBL15542421 0.77 ALDH1A1 (0.44) TDP1ALDH1A1LMNAHSD17B10TSHR
SCHEMBL476953 0.77 TDP1 (0.41) TDP1ALDH1A1LMNAHSD17B10TSHR
SCHEMBL21603032 0.75 TDP1 (0.48) TDP1ALDH1A1LMNAHSD17B10TSHR
SCHEMBL28501027 0.75 ALDH1A1 (0.42) TDP1ALDH1A1LMNAHSD17B10TSHR
SCHEMBL21183332 0.74 TDP1 (0.53) TDP1ALDH1A1LMNAHSD17B10TSHR

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 1006 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
WO-2025106703-A1 BIO-BASED COMPOSITIONS FOR PHOTORESISTS AND PATTERNING HUSTAD PHILLIP DENE (US) 2025-05-22 WO claimed
WO-2025106697-A1 BIO-BASED COMPOSITIONS FOR PHOTORESISTS AND PATTERNING HUSTAD PHILLIP DENE (US) 2025-05-22 WO claimed
US-11822250-B2 Solution, method of forming resist pattern, and semiconductor device manufacturing method TOKYO OHKA KOGYO CO., LTD. (JP) 2023-11-21 US claimed
US-11488824-B2 Method for manufacturing semiconductor device using silicon-containing resist underlayer film forming composition for solvent development NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2022-11-01 US claimed
CN-122095070-A Washing liquid and washing method 2026-05-26 CN disclosed
CN-122095069-A Washing liquid and washing method 2026-05-26 CN disclosed
EP-4745668-A1 PHOTOSENSITIVE RESIN COMPOSITION, PATTERN FORMATION METHOD, AND METHOD FOR PRODUCING LAMINATE TOKYO OHKA KOGYO CO., LTD. (JP) 2026-05-20 EP disclosed
EP-4743828-A1 PHOTOCURABLE AS WELL AS THERMALLY CURABLE COMPOSITIONS SUITABLE FOR LOW TEMPERATURE CURING BASF SE (DE) 2026-05-20 EP disclosed
US-12631963-B2 Method for producing hollow package and method for providing photosensitive composition TOKYO OHKA KOGYO CO., LTD. (JP) 2026-05-19 US disclosed
US-12631962-B2 Resist composition and method for forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2026-05-19 US disclosed
CN-122070516-A Negative photosensitive composition, photosensitive resist film, method for producing hollow structure, and method for forming pattern 东京应化工业株式会社 2026-05-19 CN disclosed
WO-2026100268-A1 NEGATIVE PHOTOSENSITIVE FILM, MULTILAYER FILM, DRY FILM, AND NEGATIVE PHOTOSENSITIVE COMPOSITION 東京応化工業株式会社 2026-05-15 WO disclosed
US-6054545-A CELLULOSE MODIFIED WITH CARBOXYLATED ISOCYANATE TOKYO OHKA KOGYO CO., LTD. (JP) 2000-04-25 US disclosed
US-5924912-A Photosensitive resin composition for sandblast resist MATSUSHITA ELECTRONICS CORPORATION (JP) 1999-07-20 US disclosed
US-5916738-A Photosensitive resin composition for sandblast resist MATSUSHITA ELECTRONICS CORPORATION (JP) 1999-06-29 US disclosed
EP-0894808-A1 Modified cellulose compound and photopolymerizable resin composition containing the same TOKYO OHKA KOGYO CO., LTD. (JP) 1999-02-03 EP disclosed
EP-0890417-A1 Plastic abrasive for sandblasting, method for sandblast processing plasma display panel substrate using the same and method for treating sandblasting waste matters TOKYO OHKA KOGYO CO., LTD. (JP) 1999-01-13 EP disclosed
US-5756261-A A CURABLE PHOTORESISTS BLENDS COMPRISING A POLYETHERURETHANE OR A POLYESTERURETHANE COPOLYMER WITH AN ACRYLIC COPOLYMER AND CARBOXY GROUP-CONTAINING CELLULOSE, A PHOTOINITIATOR; ADHESION, FLEXIBILITY, ELASTICITY MATSUSHITA ELECTRONICS CORPORATION (JP) 1998-05-26 US disclosed
CN-1140843-A Photosensitive resin composition for sandblast resist MATSUSHITA ELECTRIC CORP (JP) 1997-01-22 CN disclosed
EP-0741332-A1 Photosensitive resin composition for sandblast resist MATSUSHITA ELECTRONICS CORPORATION (JP) 1996-11-06 EP disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (2 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-12631962-B2 Resist composition and method for forming resist pattern TERB1, TERF2, LSM8 TDP1 2306/4885ALDH1A1 1639/4885LMNA 1064/4885
US-12631963-B2 Method for producing hollow package and method for providing photosensitive composition ASH2L, AS3MT, ASH1L TDP1 1452/4885ALDH1A1 2680/4885LMNA 3028/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.