Predicted protein targets (top 4)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | SMN1; SMN2 | Q16637 | 2/20 | 0.35 |
| ▸ | TSHR | P16473 | 1/20 | 0.35 |
| ▸ | MEN1 | O00255 | 1/20 | 0.31 |
| ▸ | KMT2A | Q03164 | 1/20 | 0.31 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL28844445 | 0.94 | TSHR (0.33) | SMN1; SMN2TSHR | |
| SCHEMBL28230690 | 0.91 | TSHR (0.30) | SMN1; SMN2TSHR | |
| SCHEMBL312355 | 0.83 | SMN1; SMN2 (0.42) | SMN1; SMN2TSHRMEN1KMT2A | |
| Perfluorotoluene SCHEMBL308464 | 0.79 | SMN1; SMN2 (0.41) | SMN1; SMN2TSHRMEN1KMT2A | |
| Perfluorotoluene SCHEMBL28273865 | 0.76 | SMN1; SMN2 (0.39) | SMN1; SMN2TSHRMEN1KMT2A | |
| Perfluorotoluene SCHEMBL28760715 | 0.76 | SMN1; SMN2 (0.39) | SMN1; SMN2TSHRMEN1KMT2A | |
| SCHEMBL3168128 | 0.76 | SMN1; SMN2 (0.39) | SMN1; SMN2TSHRMEN1KMT2A | |
| SCHEMBL1998599 | 0.75 | SMN1; SMN2 (0.37) | SMN1; SMN2TSHRMEN1KMT2A | |
| SCHEMBL1972987 | 0.75 | — | — | |
| SCHEMBL24254677 | 0.73 | SMN1; SMN2 (0.38) | SMN1; SMN2TSHRMEN1KMT2A |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 94 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20260123372-A1 | MANUFACTURING SEMICONDUCTOR DEVICE USING SELECTIVE DIELECTRIC ON DIELECTRIC (DOD) DEPOSITION PROCESS | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2026-04-30 | — | — | US | claimed |
| US-12518966-B2 | Selective plasma enhanced atomic layer deposition | VERSUM MATERIALS US, LLC (US) | 2026-01-06 | — | — | US | claimed |
| US-20240047196-A1 | SELECTIVE THERMAL ATOMIC LAYER DEPOSITION | VERSUM MAT US LLC (US) | 2024-02-08 | — | — | US | claimed |
| US-20240014036-A1 | SELECTIVE PLASMA ENHANCED ATOMIC LAYER DEPOSITION | VERSUM MATERIALS US, LLC | 2024-01-11 | — | — | US | claimed |
| US-20230416911-A1 | SELECTIVE DEPOSITION OF SILICON AND OXYGEN CONTAINING DIELECTRIC FILM ON DIELECTRICS | VERSUM MATERIALS US, LLC | 2023-12-28 | — | — | US | claimed |
| CN-116918029-A | selective thermal atomic layer deposition | 弗萨姆材料美国有限责任公司 | 2023-10-20 | — | — | CN | claimed |
| CN-116761906-A | Selective plasma enhanced atomic layer deposition | 弗萨姆材料美国有限责任公司 | 2023-09-15 | — | — | CN | claimed |
| EP-4240886-A1 | SELECTIVE PLASMA ENHANCED ATOMIC LAYER DEPOSITION | Versum Materials US, LLC (US) | 2023-09-13 | — | — | EP | claimed |
| EP-4241299-A1 | SELECTIVE THERMAL ATOMIC LAYER DEPOSITION | Versum Materials US, LLC (US) | 2023-09-13 | — | — | EP | claimed |
| WO-2022119860-A9 | SELECTIVE THERMAL ATOMIC LAYER DEPOSITION | VERSUM MATERIAL US, LLC (US) | 2023-08-24 | — | — | WO | claimed |
| US-20180351121-A1 | HYBRID HALIDE PEROVSKITE-BASED FIELD EFFECT TRANSISTORS | WAKE FOREST UNIVERSITY (US) | 2018-12-06 | — | — | US | claimed |
| US-9815809-B2 | Formation of chiral 4-chromanones using chiral pyrrolidines in the presence of phenols or thiophenols | DSM IP ASSETS B.V. (NL) | 2017-11-14 | — | — | US | claimed |
| CN-105358541-B | Chiral 4 benzodihydropyrone is formed using chiral pyrrolidine in the presence of phenol or thiophenol | 帝斯曼知识产权资产管理有限公司 | 2017-11-03 | — | — | CN | claimed |
| WO-2017083408-A1 | HYBRID HALIDE PEROVSKITE-BASED FIELD EFFECT TRANSISTORS | WAKE FOREST UNIVERSITY (US) | 2017-05-18 | — | — | WO | claimed |
| US-20170130085-A1 | CONDUCTOR COMPOSITION INK, CONDUCTOR, LAMINATE, LAMINATED WIRING BOARD AND ELECTRONIC EQUIPMENT | IDEMITSU KOSAN CO., LTD. (JP) | 2017-05-11 | — | — | US | claimed |
| EP-3016940-B1 | FORMATION OF CHIRAL 4-CHROMANONES USING CHIRAL PYRROLIDINES IN THE PRESENCE OF PHENOLS OR THIOPHENOLS | DSM IP ASSETS BV (NL) | 2017-04-12 | — | — | EP | claimed |
| CN-106459640-A | Conductor composition ink, conductor, laminate, laminated wiring board, and electronic device | 出光兴产株式会社 | 2017-02-22 | — | — | CN | claimed |
| US-20160168111-A1 | FORMATION OF CHIRAL 4-CHROMANONES USING CHIRAL PYRROLIDINES IN THE PRESENCE OF PHENOLS OR THIOPHENOLS | DSM IP ASSETS B.V. (NL) | 2016-06-16 | — | — | US | claimed |
| EP-3016940-A1 | FORMATION OF CHIRAL 4-CHROMANONES USING CHIRAL PYRROLIDINES IN THE PRESENCE OF PHENOLS OR THIOPHENOLS | DSM IP Assets B.V. (NL) | 2016-05-11 | — | — | EP | claimed |
| WO-2015001029-A1 | FORMATION OF CHIRAL 4-CHROMANONES USING CHIRAL PYRROLIDINES IN THE PRESENCE OF PHENOLS OR THIOPHENOLS | DSM IP ASSETS B.V. (NL) | 2015-01-08 | — | — | WO | claimed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (2 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20160168111-A1 | FORMATION OF CHIRAL 4-CHROMANONES USING CHIRAL PYRROLIDINES IN THE PRESENCE OF PHENOLS OR THIOPHENOLS | CYP4B1, CYP4F3, CYP4F2 | SMN1; SMN2 4878/4885TSHR 2008/4885MEN1 4707/4885 |
| US-20260123372-A1 | MANUFACTURING SEMICONDUCTOR DEVICE USING SELECTIVE DIELECTRIC ON DIELECTRIC (DOD) DEPOSITION PROCESS | PDK1, HPD, HAO2 | SMN1; SMN2 3762/4885TSHR 4501/4885MEN1 4174/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.