SCHEMBL14477201

SCHEMBL14477201

O=S(=O)(O)C(F)(F)C(F)(F)C(F)(F)S(=O)(=O)N1CCNCC1

nearest known ligand 0.41

Predicted protein targets (top 14)

geneUniProtsupporting neighboursconfidence
KDM4E B2RXH2 1/20 0.41
LMNA P02545 1/20 0.31
CYP3A4 P08684 1/20 0.31
GABRA1 P14867 1/20 0.31
TSHR P16473 1/20 0.31
GABRG2 P18507 1/20 0.31
NFKB1 P19838 1/20 0.31
GABRB3 P28472 1/20 0.31
GABRA5 P31644 1/20 0.31
GABRA3 P34903 1/20 0.31
GABRA2 P47869 1/20 0.31
GABRA6 Q16445 1/20 0.31
MAPT P10636 1/20 0.31
ALDH1A1 P00352 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL2759961 0.83 CA1 (0.38) KDM4ECYP3A4TSHRALDH1A1
SCHEMBL10146446 0.83 CA1 (0.38) KDM4ECYP3A4TSHRALDH1A1
SCHEMBL190593 0.83 CA1 (0.38) KDM4ECYP3A4TSHRALDH1A1
SCHEMBL15083783 0.83 KDM4E (0.39) KDM4EALDH1A1
SCHEMBL9963779 0.82 KDM4E (0.41) KDM4EMAPTALDH1A1
SCHEMBL2618574 0.82 ABCC9 (0.32) LMNA
SCHEMBL9986725 0.81 CA1 (0.37) KDM4ETSHRALDH1A1
SCHEMBL18954349 0.81 KDM4E (0.44) KDM4EMAPT
SCHEMBL17954597 0.80 KDM4E (0.33) KDM4E
SCHEMBL14932177 0.80 KDM4E (0.37) KDM4EMAPTALDH1A1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 75 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-3731016-A1 ACTIVE LIGHT-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, PATTERN FORMATION METHOD, MASK BLANK WITH RESIST FILM, METHOD FOR MANUFACTURING PHOTOMASK, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE Fujifilm Corporation (JP) 2020-10-28 EP disclosed
US-10705428-B2 Organic processing liquid for patterning chemical amplification resist film, container for organic processing liquid for patterning chemical amplification resist film, and pattern forming method, method of manufacturing electronic device, and electronic device using the same FUJIFILM CORPORATION (JP) 2020-07-07 US disclosed
EP-2681623-B1 PATTERN FORMING METHOD, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION AND RESIST FILM FUJIFILM CORP (JP) 2019-07-10 EP disclosed
US-9897922-B2 Method of forming pattern and developer for use in the method FUJIFILM CORPORATION (JP) 2018-02-20 US disclosed
US-9885956-B2 Pattern forming method, and, electronic device producing method and electronic device, each using the same FUJIFILM CORPORATION (JP) 2018-02-06 US disclosed
EP-2891014-B1 PATTERN FORMING METHOD, AND ELECTRONIC DEVICE PRODUCING METHOD USING THE SAME FUJIFILM CORP (JP) 2017-11-29 EP disclosed
US-20170184973-A1 ORGANIC TREATMENT LIQUID FOR PATTERNING RESIST FILM, METHOD OF PRODUCING ORGANIC TREATMENT LIQUID FOR PATTERNING RESIST FILM, STORAGE CONTAINER OF ORGANIC TREATMENT LIQUID FOR PATTERNING RESIST FILM, PATTERN FORMING METHOD USING THE SAME, AND METHOD OF PRODUCING ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2017-06-29 US disclosed
US-20170115571-A1 PATTERN FORMING METHOD AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE USING SAME FUJIFILM CORPORATION (JP) 2017-04-27 US disclosed
US-20170102618-A1 METHOD OF FORMING PATTERN FUJIFILM CORPORATION (JP) 2017-04-13 US disclosed
US-9551931-B2 Method of forming pattern, actinic-ray- or radiation-sensitive resin composition, actinic-ray- or radiation-sensitive film, process for manufacturing electronic device and electronic device FUJIFILM CORPORATION (JP) 2017-01-24 US disclosed
US-20130113082-A1 METHOD OF FORMING PATTERN AND DEVELOPER FOR USE IN THE METHOD FUJIFILM CORPORATION (JP) 2013-05-09 US disclosed
WO-2013062066-A1 PATTERN FORMING METHOD, MULTI-LAYERED RESIST PATTERN, MULTI-LAYERED FILM FOR ORGANIC SOLVENT DEVELOPMENT, RESIST COMPOSITION, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2013-05-02 WO disclosed
US-20130101812-A1 METHOD OF FORMING PATTERN FUJIFILM CORPORATION (JP) 2013-04-25 US disclosed
US-20130078434-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, AND, RESIST FILM, PATTERN FORMING METHOD, ELECTRONIC DEVICE MANUFACTURING METHOD, AND ELECTRONIC DEVICE, EACH USING THE SAME FUJIFILM CORPORATION (JP) 2013-03-28 US disclosed
US-20130078432-A1 PATTERN FORMING METHOD, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, METHOD FOR PREPARING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2013-03-28 US disclosed
US-20130078426-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, AND RESIST FILM, PATTERN FORMING METHOD, METHOD FOR PREPARING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE, EACH USING THE SAME FUJIFILM CORPORATION (JP) 2013-03-28 US disclosed
WO-2013015444-A1 PATTERN FORMING METHOD, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, MANUFACTURING METHOD OF ELECTRONIC DEVICE AND ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2013-01-31 WO disclosed
US-20130004739-A1 PATTERN FORMING METHOD, METHOD FOR PRODUCING ELECTRONIC DEVICE USING THE SAME, AND ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2013-01-03 US disclosed
WO-2013002417-A1 PATTERN FORMING METHOD, MULTI-LAYERED RESIST PATTERN, MULTI-LAYERED FILM FOR ORGANIC SOLVENT DEVELOPMENT, RESIST COMPOSITION, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2013-01-03 WO disclosed
US-20130004740-A1 ACTINIC-RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM AND PATTERN FORMING METHOD EACH USING THE COMPOSITION, METHOD FOR PREPARING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2013-01-03 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20170184973-A1 ORGANIC TREATMENT LIQUID FOR PATTERNING RESIST FILM, METHOD OF PRODUCING ORGANIC TREATMENT LIQUID FOR PATTERNING RESIST FILM, STORAGE CONTAINER OF ORGANIC TREATMENT LIQUID FOR PATTERNING RESIST FILM, PATTERN FORMING METHOD USING THE SAME, AND METHOD OF PRODUCING ELECTRONIC DEVICE MYB, NCL, SMYD2 KDM4E 705/4885LMNA 2142/4885CYP3A4 4708/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.