⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL359593 | 0.70 | MGLL (0.31) | — | |
| SCHEMBL2270448 | 0.69 | — | — | |
| SCHEMBL2101366 | 0.69 | — | — | |
| SCHEMBL2100625 | 0.69 | — | — | |
| SCHEMBL6046989 | 0.67 | — | — | |
| SCHEMBL9157805 | 0.67 | — | — | |
| SCHEMBL1184035 | 0.67 | — | — | |
| SCHEMBL2101386 | 0.67 | — | — | |
| SCHEMBL2103140 | 0.65 | — | — | |
| SCHEMBL2102472 | 0.65 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 68 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20050255714-A1 | Method for silicon nitride chemical vapor deposition | APPLIED MATERIALS, INC. | 2005-11-17 | — | — | US | claimed |
| US-20260076110-A1 | HYBRID ATOMIC LAYER DEPOSITION | LAM RES CORP (US) | 2026-03-12 | — | — | US | disclosed |
| US-20250372367-A1 | DEPOSITION AND ETCH OF SILICON-CONTAINING LAYER | LAM RES CORP (US) | 2025-12-04 | — | — | US | disclosed |
| US-20250197996-A1 | LOW-K DIELECTRIC PROTECTION DURING PLASMA DEPOSITION OF SILICON NITRIDE | LAM RES CORP (US) | 2025-06-19 | — | — | US | disclosed |
| US-20250188609-A1 | SEAM-FREE AND CRACK-FREE DEPOSITION | LAM RES CORP (US) | 2025-06-12 | — | — | US | disclosed |
| US-20250166989-A1 | THERMAL FILM DEPOSITION | LAM RES CORP (US) | 2025-05-22 | — | — | US | disclosed |
| CN-119604963-A | Hybrid atomic layer deposition | 朗姆研究公司 | 2025-03-11 | — | — | CN | disclosed |
| CN-119487614-A | Deposition and etching of silicon-containing layers | 朗姆研究公司 | 2025-02-18 | — | — | CN | disclosed |
| US-20250054747-A1 | CONFORMAL DEPOSITION OF SILICON NITRIDE | LAM RES CORP (US) | 2025-02-13 | — | — | US | disclosed |
| US-12218138-B2 | Air gap formation between gate spacer and epitaxy structure | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2025-02-04 | — | — | US | disclosed |
| US-7601652-B2 | Method for treating substrates and films with photoexcitation | APPLIED MATERIALS, INC. (US) | 2009-10-13 | — | — | US | disclosed |
| US-20090242957-A1 | ATOMIC LAYER DEPOSITION PROCESSES FOR NON-VOLATILE MEMORY DEVICES | APPLIED MATERIALS, INC. | 2009-10-01 | — | — | US | disclosed |
| US-20090090952-A1 | PLASMA SURFACE TREATMENT FOR SI AND METAL NANOCRYSTAL NUCLEATION | APPLIED MATERIALS, INC. | 2009-04-09 | — | — | US | disclosed |
| US-20090020802-A1 | INTEGRATED SCHEME FOR FORMING INTER-POLY DIELECTRICS FOR NON-VOLATILE MEMORY DEVICES | APPLIED MATERIALS, INC. | 2009-01-22 | — | — | US | disclosed |
| US-20080153271-A1 | SAFE HANDLING OF LOW ENERGY, HIGH DOSE ARSENIC, PHOSPHORUS, AND BORON IMPLANTED WAFERS | APPLIED MATERIALS, INC. | 2008-06-26 | — | — | US | disclosed |
| WO-2007002040-A2 | METHOD FOR FORMING SILICON-CONTAINING MATERIALS DURING A PHOTOEXCITATION DEPOSITION PROCESS | APPLIED MATERIALS, INC. (US) | 2007-01-04 | — | — | WO | disclosed |
| US-20060286774-A1 | METHOD FOR FORMING SILICON-CONTAINING MATERIALS DURING A PHOTOEXCITATION DEPOSITION PROCESS | APPLIED MATERIALS. INC. | 2006-12-21 | — | — | US | disclosed |
| US-20060286775-A1 | METHOD FOR FORMING SILICON-CONTAINING MATERIALS DURING A PHOTOEXCITATION DEPOSITION PROCESS | APPLIED MATERIALS, INC. | 2006-12-21 | — | — | US | disclosed |
| US-20060286820-A1 | Method for treating substrates and films with photoexcitation | APPLIED MATERIALS, INC. | 2006-12-21 | — | — | US | disclosed |
| US-20060286776-A1 | METHOD FOR FORMING SILICON-CONTAINING MATERIALS DURING A PHOTOEXCITATION DEPOSITION PROCESS | APPLIED MATERIALS, INC. | 2006-12-21 | — | — | US | disclosed |