⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL2272485 | 0.82 | — | — | |
| SCHEMBL2275365 | 0.78 | — | — | |
| SCHEMBL2101386 | 0.71 | — | — | |
| SCHEMBL9157805 | 0.71 | — | — | |
| SCHEMBL6046989 | 0.71 | — | — | |
| SCHEMBL9845415 | 0.69 | — | — | |
| SCHEMBL230819 | 0.69 | — | — | |
| SCHEMBL329203 | 0.69 | HTT (0.32) | — | |
| SCHEMBL1448901 | 0.69 | HTT (0.32) | — | |
| SCHEMBL431586 | 0.69 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 30 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| WO-2015023116-A1 | HIGH HEAT RESISTANT SEPARATION MEMBRANE, MANUFACTURING METHOD THEREFOR AND BATTERY COMPRISING SAME | 성균관대학교산학협력단 (KR) | 2015-02-19 | — | — | WO | claimed |
| US-20130337312-A1 | SEPARATOR FOR ELECTROCHEMICAL DEVICES AND METHOD OF MANUFACTURING THE SEPARATOR | Research & Business Foundation Sungkyunkwan University (KR) | 2013-12-19 | — | — | US | claimed |
| US-20060019501-A1 | Methods of forming a thin layer including hafnium silicon oxide using atomic layer deposition and methods of forming a gate structure and a capacitor including the same | SAMSUNG ELECTRONICS CO., LTD. | 2006-01-26 | — | — | US | claimed |
| CN-111424261-B | Atomic layer deposition apparatus | 三星电子株式会社 | 2023-09-08 | — | — | CN | disclosed |
| US-11339473-B2 | Apparatus for atomic layer deposition and method of forming thin film using the apparatus | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2022-05-24 | — | — | US | disclosed |
| US-20200216953-A1 | APPARATUS FOR ATOMIC LAYER DEPOSITION AND METHOD OF FORMING THIN FILM USING THE APPARATUS | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2020-07-09 | — | — | US | disclosed |
| US-9873942-B2 | Methods of vapor deposition with multiple vapor sources | ASM IP HOLDING B.V. (NL) | 2018-01-23 | — | — | US | disclosed |
| US-9613800-B2 | Methods of manufacturing semiconductor devices including an oxide layer | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2017-04-04 | — | — | US | disclosed |
| US-20160097121-A1 | MULTIPLE VAPOR SOURCES FOR VAPOR DEPOSITION | ASM IP HOLDING B.V. (NL) | 2016-04-07 | — | — | US | disclosed |
| US-9238865-B2 | Multiple vapor sources for vapor deposition | ASM IP HOLDING B.V. (NL) | 2016-01-19 | — | — | US | disclosed |
| CN-103026471-B | The deposition process of annular membrane | EUGENE TECHNOLOGY CO.,LTD. (KR) | 2016-01-13 | — | — | CN | disclosed |
| US-20110151633-A1 | METHODS OF FORMING A CONDUCTIVE LAYER STRUCTURE AND METHODS OF MANUFACTURING A RECESSED CHANNEL TRANSISTOR INCLUDING THE SAME | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2011-06-23 | — | — | US | disclosed |
| US-7883974-B2 | Method of manufacturing semiconductor device | KABUSHIKI KAISHA TOSHIBA (JP) | 2011-02-08 | — | — | US | disclosed |
| US-20100055854-A1 | Method of manufacturing semiconductor device | KABUSHIKI KAISHA TOSHIBA (JP) | 2010-03-04 | — | — | US | disclosed |
| US-7608498-B2 | Method of manufacturing semiconductor device | KABUSHIKI KAISHA TOSHIBA (JP) | 2009-10-27 | — | — | US | disclosed |
| US-20080182396-A1 | Method of manufacturing semiconductor device | KABUSHIKI KAISHA TOSHIBA (JP) | 2008-07-31 | — | — | US | disclosed |
| US-7335562-B2 | Method of manufacturing semiconductor device | KABUSHIKI KAISHA TOSHIBA (JP) | 2008-02-26 | — | — | US | disclosed |
| US-20070093032-A1 | Method of manufacturing semiconductor device | KABUSHIKI KAISHA TOSHIBA | 2007-04-26 | — | — | US | disclosed |
| US-20060189055-A1 | Method of forming a composite layer, method of manufacturing a gate structure by using the method of forming the composite layer and method of manufacturing a capacitor by using the method of forming the composite layer | SAMSUNG ELECTRONICS CO., LTD. | 2006-08-24 | — | — | US | disclosed |
| US-20060019501-A1 | Methods of forming a thin layer including hafnium silicon oxide using atomic layer deposition and methods of forming a gate structure and a capacitor including the same | SAMSUNG ELECTRONICS CO., LTD. | 2006-01-26 | — | — | US | disclosed |