SCHEMBL1457134

SCHEMBL1457134

CC(C)(C)OC(=O)Oc1ccc(C(C)(c2ccc(OC(=O)OC(C)(C)C)cc2)c2ccc(OC(=O)OC(C)(C)C)cc2)cc1

nearest known ligand 0.68

Predicted protein targets (top 16)

geneUniProtsupporting neighboursconfidence
ELANE P08246 9/20 0.68
KDM1A O60341 1/20 0.49
MAPT P10636 3/20 0.42
RAB9A P51151 3/20 0.42
SMN1; SMN2 Q16637 2/20 0.42
NPC1 O15118 1/20 0.42
HTT P42858 1/20 0.42
TDP1 Q9NUW8 1/20 0.42
L3MBTL1 Q9Y468 1/20 0.42
CA2 P00918 1/20 0.42
MEN1 O00255 2/20 0.40
KMT2A Q03164 2/20 0.40
NPSR1 Q6W5P4 2/20 0.38
MAPKAPK2 P49137 1/20 0.37
ALDH1A1 P00352 1/20 0.36
THRB P10828 1/20 0.36

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL12240212 1.00 ELANE (0.68) ELANEKDM1AMAPTRAB9ASMN1; SMN2
SCHEMBL14878467 0.95 ELANE (0.62) ELANEKDM1AMAPTRAB9ASMN1; SMN2
SCHEMBL12240209 0.95 ELANE (0.62) ELANEKDM1AMAPTRAB9ASMN1; SMN2
SCHEMBL5561643 0.95 ELANE (0.62) ELANEKDM1AMAPTRAB9ASMN1; SMN2
SCHEMBL12240208 0.95 ELANE (0.62) ELANEKDM1AMAPTRAB9ASMN1; SMN2
SCHEMBL22504634 0.93 ELANE (0.60) ELANEKDM1AMAPTRAB9ASMN1; SMN2
SCHEMBL12240210 0.90 ELANE (0.57) ELANEKDM1AMAPTRAB9ASMN1; SMN2
SCHEMBL12240211 0.90 ELANE (0.57) ELANEKDM1AMAPTRAB9ASMN1; SMN2
SCHEMBL4061370 0.90 ELANE (0.81) ELANEKDM1AMAPTRAB9ATDP1
SCHEMBL18950789 0.89 ELANE (0.55) ELANEKDM1AMAPTRAB9ASMN1; SMN2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 30 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-3566098-B1 CHEMICALLY AMPLIFIED POSITIVE TYPE PHOTORESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME MERCK PATENT GMBH (DE) 2025-11-19 EP disclosed
US-11835849-B2 Actinic ray-sensitive or radiation-sensitive resin composition, resist film, pattern forming method, and method for manufacturing electronic device FUJIFILM CORPORATION (JP) 2023-12-05 US disclosed
US-11835849-B2 Actinic ray-sensitive or radiation-sensitive resin composition, resist film, pattern forming method, and method for manufacturing electronic device FUJIFILM CORPORATION (JP) 2023-12-05 US disclosed
US-11687001-B2 Actinic ray-sensitive or radiation-sensitive resin composition, resist film, pattern forming method, and method for manufacturing electronic device FUJIFILM CORPORATION (JP) 2023-06-27 US disclosed
US-11687001-B2 Actinic ray-sensitive or radiation-sensitive resin composition, resist film, pattern forming method, and method for manufacturing electronic device FUJIFILM CORPORATION (JP) 2023-06-27 US disclosed
US-20230194983-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, PATTERN FORMING METHOD, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2023-06-22 US disclosed
US-20230194983-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, PATTERN FORMING METHOD, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2023-06-22 US disclosed
US-11163233-B2 Chemically amplified positive type photoresist composition and pattern forming method using the same MERCK PATENT GMBH (DE) 2021-11-02 US disclosed
US-11163233-B2 Chemically amplified positive type photoresist composition and pattern forming method using the same MERCK PATENT GMBH (DE) 2021-11-02 US disclosed
US-20210055653-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, PATTERN FORMING METHOD, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2021-02-25 US disclosed
EP-1449833-B1 BISIMIDE COMPOUND, ACID GENERATOR AND RESIST COMPOSITION EACH CONTAINING THE SAME, AND METHOD OF FORMING PATTERN FROM THE COMPOSITION WAKO PURE CHEM IND LTD (JP) 2009-09-09 EP disclosed
US-7374857-B2 Bismide compound, acid generator and resist composition each containing the same, and method of forming pattern from the composition WAKO PURE CHEMICAL INDUSTRIES LTD. (JP) 2008-05-20 US disclosed
EP-1314725-B1 SULFONIUM SALT COMPOUND WAKO PURE CHEM IND LTD (JP) 2008-03-19 EP disclosed
US-6924323-B2 Sulfonium salt compound WAKO PURE CHEMICAL INDUSTRIES, LTD. (JP) 2005-08-02 US disclosed
US-20050038261-A1 Bismide compound, acid generator and resist composition each containing the same, and method of forming pattern from the composition WAKO PURE CHEMICAL INDUSTRIES LTD. (JP) 2005-02-17 US disclosed
EP-1449833-A1 BISIMIDE COMPOUND, ACID GENERATOR AND RESIST COMPOSITION EACH CONTAINING THE SAME, AND METHOD OF FORMING PATTERN FROM THE COMPOSITION Wako Pure Chemical Industries, Ltd. (JP) 2004-08-25 EP disclosed
US-6723483-B1 Sulfonium salt compounds WAKO PURE CHEMICAL INDUSTRIES, LTD. (JP) 2004-04-20 US disclosed
US-20040033434-A1 Sulfonium salt compound FUJIFILM WAKO PURE CHEMICAL CORPORATION (JP) 2004-02-19 US disclosed
US-6586152-B1 Useful as an ingredient of a resist composition used for preparation of semiconductor devices and the like, which comprises a compound shown by the following general formula useful as an ingredient of a resist composition used for WAKO PURE CHEMICAL INDUSTRIES, LTD. (JP) 2003-07-01 US disclosed
EP-1314725-A1 SULFONIUM SALT COMPOUND Wako Pure Chemical Industries, Ltd. (JP) 2003-05-28 EP disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (5 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-11835849-B2 Actinic ray-sensitive or radiation-sensitive resin composition, resist film, pattern forming method, and method for manufacturing electronic device RER1, TERB1, TRRAP ELANE 515/4885KDM1A 1271/4885MAPT 96/4885
US-20230194983-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, PATTERN FORMING METHOD, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE RER1, TERB1, TRRAP ELANE 543/4885KDM1A 1234/4885MAPT 82/4885
US-11687001-B2 Actinic ray-sensitive or radiation-sensitive resin composition, resist film, pattern forming method, and method for manufacturing electronic device RER1, TERB1, TRRAP ELANE 515/4885KDM1A 1271/4885MAPT 96/4885
US-20050038261-A1 Bismide compound, acid generator and resist composition each containing the same, and method of forming pattern from the composition ASIC1, GAR1, RER1 ELANE 4461/4885KDM1A 1005/4885MAPT 868/4885
US-20040033434-A1 Sulfonium salt compound SPIN1, RER1, SPIN2B ELANE 3146/4885KDM1A 562/4885MAPT 2666/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.