SCHEMBL14655834

SCHEMBL14655834

CCC1(OC(=O)O)CCCC1

nearest known ligand 0.34

Predicted protein targets (top 13)

geneUniProtsupporting neighboursconfidence
MEN1 O00255 1/20 0.34
KMT2A Q03164 1/20 0.34
TSHR P16473 1/20 0.34
CYP4F2 P78329 1/20 0.32
CYP4A11 Q02928 1/20 0.32
CYP2C19 P33261 1/20 0.31
PRCP P42785 1/20 0.31
SIGMAR1 Q99720 1/20 0.31
CTSL P07711 2/20 0.31
CTSB P07858 2/20 0.31
CTSK P43235 2/20 0.31
ALDH1A1 P00352 1/20 0.30
POLB P06746 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL20484020 0.98 CYP2C19 (0.34) MEN1KMT2ATSHRCYP4F2CYP4A11
SCHEMBL6278444 0.98 CYP2C19 (0.34) MEN1KMT2ATSHRCYP4F2CYP4A11
SCHEMBL28503851 0.95 SMN1; SMN2 (0.31) MEN1KMT2ATSHRCTSLCTSB
SCHEMBL28503847 0.91
SCHEMBL14991061 0.84 MEN1 (0.32) MEN1KMT2ATSHRALDH1A1
SCHEMBL20483832 0.83
SCHEMBL20484018 0.82 CYP2C19 (0.31) MEN1KMT2ATSHRCYP2C19CTSL
SCHEMBL14655833 0.82 MEN1 (0.31) MEN1KMT2ATSHR
SCHEMBL14990797 0.82 CYP2C19 (0.31) MEN1KMT2ATSHRCYP2C19CTSL
SCHEMBL143845 0.82 ALDH1A1 (0.33) MEN1KMT2ATSHRALDH1A1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 13 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20230152693-A1 CARBOXYLATE, CARBOXYLIC ACID GENERATOR, RESIN, RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2023-05-18 US disclosed
US-20230152693-A1 CARBOXYLATE, CARBOXYLIC ACID GENERATOR, RESIN, RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2023-05-18 US disclosed
CN-115023455-A Foamed polyurethane composition 美国主席团有限公司 2022-09-06 CN disclosed
CN-106610566-B Chemically amplified positive resist composition and patterning method 信越化学工业株式会社 2021-10-08 CN disclosed
CN-106444288-B Chemically amplified positive resist composition and pattern forming method 信越化学工业株式会社 2021-04-09 CN disclosed
EP-3163374-B1 CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS SHINETSU CHEMICAL CO (JP) 2020-12-02 EP disclosed
EP-3128368-B1 CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION AND PATTERN FORMING PROCESS SHINETSU CHEMICAL CO (JP) 2018-01-24 EP disclosed
EP-3163374-A1 CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS Shin-Etsu Chemical Co., Ltd. (JP) 2017-05-03 EP disclosed
US-20170115567-A1 Chemically Amplified Positive Resist Composition and Patterning Process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-04-27 US disclosed
EP-3128368-A1 CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION AND PATTERN FORMING PROCESS Shin-Etsu Chemical Co., Ltd. (JP) 2017-02-08 EP disclosed
US-8980525-B2 Chemically amplified positive resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2015-03-17 US disclosed
US-20130026044-A1 CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-01-31 US disclosed
EP-2551722-A1 Chemically amplified positive resist composition and patterning process Shin-Etsu Chemical Co., Ltd. (JP) 2013-01-30 EP disclosed