Predicted protein targets (top 6)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | ALDH1A1 | P00352 | 1/20 | 0.33 |
| ▸ | LMNA | P02545 | 1/20 | 0.33 |
| ▸ | HSD17B10 | Q99714 | 1/20 | 0.33 |
| ▸ | MEN1 | O00255 | 1/20 | 0.31 |
| ▸ | KMT2A | Q03164 | 1/20 | 0.31 |
| ▸ | TSHR | P16473 | 1/20 | 0.31 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL14883391 | 0.98 | ALDH1A1 (0.32) | ALDH1A1LMNAHSD17B10MEN1KMT2A | |
| SCHEMBL13649534 | 0.98 | ALDH1A1 (0.32) | ALDH1A1LMNAHSD17B10MEN1KMT2A | |
| SCHEMBL440062 | 0.98 | ALDH1A1 (0.32) | ALDH1A1LMNAHSD17B10MEN1KMT2A | |
| SCHEMBL13104282 | 0.95 | ALDH1A1 (0.33) | ALDH1A1LMNAHSD17B10 | |
| SCHEMBL15492447 | 0.91 | — | — | |
| SCHEMBL14991061 | 0.84 | MEN1 (0.32) | ALDH1A1MEN1KMT2ATSHR | |
| SCHEMBL12220033 | 0.83 | HDAC4 (0.34) | MEN1KMT2ATSHR | |
| SCHEMBL28240742 | 0.83 | MEN1 (0.33) | ALDH1A1LMNAHSD17B10MEN1KMT2A | |
| SCHEMBL31504151 | 0.83 | ALDH1A1 (0.31) | ALDH1A1LMNAHSD17B10 | |
| SCHEMBL14655833 | 0.82 | MEN1 (0.31) | MEN1KMT2ATSHR |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 1199 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-6730451-B2 | FLUOROACRYLATE POLYMERS; TRANSPARENCY; PREVENTING NEGATIVE WORKING; LOW ABSORPTION OF FLUORINE EXCIMER LASER LIGHT; HIGH TRANSMITTANCE TO VACUUM ULTRAVIOLET RADITION | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2004-05-04 | — | — | US | claimed |
| US-6623909-B2 | Polysiloxane | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2003-09-23 | — | — | US | claimed |
| US-6596463-B2 | Photosensitivity, resolution, chemical resistance | SHIN-ETSU CHEMICAL, CO., LTD. (JP) | 2003-07-22 | — | — | US | claimed |
| US-6461790-B1 | NOVEL POLYMER HAVING HIGH TRANSMITTANCE TO VACUUM ULTRAVIOLET RADIATION OF UP TO 300 NANOMETERS; RESIST MATERIALS HAVE SUFFICIENT TRANSPARENCY IN REGION OF EXCIMER LASER AND SATISFY RESOLUTION AND SENSITIVITY REQUIREMENTS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2002-10-08 | — | — | US | claimed |
| US-6461789-B1 | NOVEL POLYMER HAVING HIGH TRANSMITTANCE TO VACUUM ULTRAVIOLET RADIATION OF UP TO 300 NANOMETERS; RESIST MATERIALS HAVE SUFFICIENT TRANSPARENCY IN REGION OF EXCIMER LASERS, AND SATISFY RESOLUTION AND SENSITIVITY REQUIREMENTS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2002-10-08 | — | — | US | claimed |
| US-6436606-B1 | POLYMERS AND PHOTORESISTS COATING | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2002-08-20 | — | — | US | claimed |
| US-6369279-B1 | STYRENE WITH ETHER OR FLUORINE GROUPS FOR POLYMERS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2002-04-09 | — | — | US | claimed |
| US-20240241442-A1 | Positive Resist Material And Patterning Process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2024-07-18 | — | — | US | disclosed |
| US-20240210830-A1 | RESIST COMPOSITION AND PATTERN FORMING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2024-06-27 | — | — | US | disclosed |
| US-20240210824-A1 | CARBOXYLATE, CARBOXYLIC ACID GENERATOR, RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2024-06-27 | — | — | US | disclosed |
| US-20240210824-A1 | CARBOXYLATE, CARBOXYLIC ACID GENERATOR, RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2024-06-27 | — | — | US | disclosed |
| US-12013639-B2 | Positive resist material and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2024-06-18 | — | — | US | disclosed |
| US-20240184200-A1 | AMINE COMPOUND, CHEMICALLY AMPLIFIED RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2024-06-06 | — | — | US | disclosed |
| EP-1096318-A1 | Resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2001-05-02 | — | — | EP | disclosed |
| EP-1085377-A1 | Resist compositions and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2001-03-21 | — | — | EP | disclosed |
| EP-1077391-A1 | Onium salts, photoacid generators for resist compositions, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2001-02-21 | — | — | EP | disclosed |
| EP-1053985-A1 | Resist compositions and patterning process | Shin-Etsu Chemical Co., Ltd. (JP) | 2000-11-22 | — | — | EP | disclosed |
| US-6147249-A | ESTER COMPOUND CAPABLE OF FORMING ACID-DECOMPOSABLE POLYMER WHICH CAN BE BLENDED AS BASE RESIN TO FORMULATE RESIST COMPOSITION HAVING HIGHER SENSITIVITY, RESOLUTION AND ETCHING RESISTANCE THAN CONVENTIONAL RESIST COMPOSITIONS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2000-11-14 | — | — | US | disclosed |
| EP-1031879-A1 | Novel ester compounds, polymers, resist compositions and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2000-08-30 | — | — | EP | disclosed |
| EP-1004568-A2 | Novel ester compounds, polymers, resist compositions and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2000-05-31 | — | — | EP | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (2 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20240210824-A1 | CARBOXYLATE, CARBOXYLIC ACID GENERATOR, RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN | SCO2, CBR1, OXGR1 | ALDH1A1 492/4885LMNA 4690/4885HSD17B10 729/4885 |
| US-20240184200-A1 | AMINE COMPOUND, CHEMICALLY AMPLIFIED RESIST COMPOSITION AND PATTERNING PROCESS | ADAR, HNRNPU, POLQ | ALDH1A1 4624/4885LMNA 1013/4885HSD17B10 4770/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.