SCHEMBL14658792

SCHEMBL14658792

C=C(CC1(CC)CCCCCCC1)C(=O)O

nearest known ligand 0.43

Predicted protein targets (top 12)

geneUniProtsupporting neighboursconfidence
CYP1A2 P05177 2/20 0.41
ALDH1A1 P00352 2/20 0.41
USP2 O75604 1/20 0.41
LMNA P02545 1/20 0.41
TSHR P16473 1/20 0.41
BLM P54132 1/20 0.41
CACNA2D1 P54289 1/20 0.41
SMN1; SMN2 Q16637 1/20 0.41
CYP2C19 P33261 1/20 0.35
TET2 Q6N021 1/20 0.31
MAPK1 P28482 1/20 0.30
KMT2A Q03164 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL2680378 1.00 CYP1A2 (0.41) CYP1A2ALDH1A1USP2LMNATSHR
SCHEMBL2064950 0.98 CYP1A2 (0.38) CYP1A2ALDH1A1USP2LMNATSHR
Methyl Alcohol SCHEMBL30448702 0.88 ALDH1A1 (0.44) CYP1A2ALDH1A1USP2LMNATSHR
SCHEMBL9234902 0.88 ALDH1A1 (0.47) CYP1A2ALDH1A1USP2LMNATSHR
Methacrylic Acid SCHEMBL31436724 0.85 ALDH1A1 (0.41) CYP1A2ALDH1A1USP2LMNATSHR
SCHEMBL15456713 0.82 ALDH1A1 (0.42) CYP1A2ALDH1A1USP2LMNATSHR
SCHEMBL3195737 0.79 ALDH1A1 (0.63) CYP1A2ALDH1A1USP2LMNATSHR
SCHEMBL2920990 0.77 CYP1A2 (0.59) CYP1A2ALDH1A1USP2LMNATSHR
SCHEMBL10165469 0.77 CYP1A2 (0.37) CYP1A2ALDH1A1USP2LMNATSHR
SCHEMBL782180 0.77 EPHX1 (0.31) TSHRTET2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 9 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9310683-B2 Monomer, polymer, positive resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2016-04-12 US disclosed
US-8841061-B2 Positive resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2014-09-23 US disclosed
US-8808966-B2 Positive resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2014-08-19 US disclosed
US-8574817-B2 Positive resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-11-05 US disclosed
US-20130288180-A1 MONOMER, POLYMER, POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-10-31 US disclosed
US-20130084529-A1 POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-04-04 US disclosed
US-20130084528-A1 POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-04-04 US disclosed
US-20130084527-A1 POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-04-04 US disclosed
US-20130029269-A1 POSITIVE RESIST COMPOSITION AND PATTTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-01-31 US disclosed