Predicted protein targets (top 12)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | CYP1A2 | P05177 | 2/20 | 0.41 |
| ▸ | ALDH1A1 | P00352 | 2/20 | 0.41 |
| ▸ | USP2 | O75604 | 1/20 | 0.41 |
| ▸ | LMNA | P02545 | 1/20 | 0.41 |
| ▸ | TSHR | P16473 | 1/20 | 0.41 |
| ▸ | BLM | P54132 | 1/20 | 0.41 |
| ▸ | CACNA2D1 | P54289 | 1/20 | 0.41 |
| ▸ | SMN1; SMN2 | Q16637 | 1/20 | 0.41 |
| ▸ | CYP2C19 | P33261 | 1/20 | 0.35 |
| ▸ | TET2 | Q6N021 | 1/20 | 0.31 |
| ▸ | MAPK1 | P28482 | 1/20 | 0.30 |
| ▸ | KMT2A | Q03164 | 1/20 | 0.30 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL14658792 | 1.00 | CYP1A2 (0.41) | CYP1A2ALDH1A1USP2LMNATSHR | |
| SCHEMBL2064950 | 0.98 | CYP1A2 (0.38) | CYP1A2ALDH1A1USP2LMNATSHR | |
| Methyl Alcohol SCHEMBL30448702 | 0.88 | ALDH1A1 (0.44) | CYP1A2ALDH1A1USP2LMNATSHR | |
| SCHEMBL9234902 | 0.88 | ALDH1A1 (0.47) | CYP1A2ALDH1A1USP2LMNATSHR | |
| Methacrylic Acid SCHEMBL31436724 | 0.85 | ALDH1A1 (0.41) | CYP1A2ALDH1A1USP2LMNATSHR | |
| SCHEMBL15456713 | 0.82 | ALDH1A1 (0.42) | CYP1A2ALDH1A1USP2LMNATSHR | |
| SCHEMBL3195737 | 0.79 | ALDH1A1 (0.63) | CYP1A2ALDH1A1USP2LMNATSHR | |
| SCHEMBL2920990 | 0.77 | CYP1A2 (0.59) | CYP1A2ALDH1A1USP2LMNATSHR | |
| SCHEMBL10165469 | 0.77 | CYP1A2 (0.37) | CYP1A2ALDH1A1USP2LMNATSHR | |
| SCHEMBL782180 | 0.77 | EPHX1 (0.31) | TSHRTET2 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 13 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-118625599-A | Photosensitive resin composition, photosensitive dry film and preparation method thereof | 杭州福斯特电子材料有限公司 | 2024-09-10 | — | — | CN | claimed |
| CN-110133965-B | Chemically amplified positive resist composition | 台湾永光化学工业股份有限公司 | 2023-04-07 | — | — | CN | disclosed |
| CN-111095105-A | Actinic-ray-or radiation-sensitive resin composition, resist film, pattern forming method, and method for manufacturing electronic device | 富士胶片株式会社 | 2020-05-01 | — | — | CN | disclosed |
| US-9733564-B2 | Copolymers for lithography and method for producing same, resist composition, method for producing substrate with pattern formed thereupon, method for evaluating copolymers, and method for analyzing copolymer compositions | MITSUBISHI CHEMICAL CORPORATION (JP) | 2017-08-15 | — | — | US | disclosed |
| US-9296842-B2 | Polymer for lithography | MITSUBISHI RAYON CO., LTD. (JP) | 2016-03-29 | — | — | US | disclosed |
| US-20150301451-A1 | PATTERN FORMING METHOD, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2015-10-22 | — | — | US | disclosed |
| US-9109060-B2 | Method for producing polymer, polymer for lithography, resist composition, and method for producing substrate | MITSUBISHI RAYON, CO., LTD. (JP) | 2015-08-18 | — | — | US | disclosed |
| US-20130331533-A1 | POLYMER FOR LITHOGRAPHY | MITSUBISHI RAYON CO., LTD. (JP) | 2013-12-12 | — | — | US | disclosed |
| US-20130224654-A1 | COPOLYMERS FOR LITHOGRAPHY AND METHOD FOR PRODUCING SAME, RESIST COMPOSITION, METHOD FOR PRODUCING SUBSTRATE WITH PATTERN FORMED THEREUPON, METHOD FOR EVALUATING COPOLYMERS, AND METHOD FOR ANALYZING COPOLYMER COMPOSITIONS | MITSUBISHI RAYON CO., LTD. (JP) | 2013-08-29 | — | — | US | disclosed |
| US-20120115086-A1 | METHOD FOR PRODUCING POLYMER, POLYMER FOR LITHOGRAPHY, RESIST COMPOSITION, AND METHOD FOR PRODUCING SUBSTRATE | MITSUBISHI RAYON CO., LTD. (JP) | 2012-05-10 | — | — | US | disclosed |
| US-7754416-B2 | laminating support having upper surface on which copper exists, inorganic substance layer, and photoresist layer consisting of chemically amplified type positive photoresist composition to obtain photoresist laminate, selectively irradiating active light or radioactive rays to photoresist to form pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2010-07-13 | — | — | US | disclosed |
| US-20090226850-A1 | PROCESS FOR PRODUCING RESIST PATTERN AND CONDUCTOR PATTERN | TOKYO OHKA KOGYO CO., LTD. (JP) | 2009-09-10 | — | — | US | disclosed |
| EP-1817634-B1 | PROCESS FOR PRODUCING RESIST PATTERN AND CONDUCTOR PATTERN | TOKYO OHKA KOGYO CO LTD (JP) | 2009-04-08 | — | — | EP | disclosed |