SCHEMBL14670243

SCHEMBL14670243

CCC(C(=O)O)C(O)(C(F)(F)F)C(F)(F)F

nearest known ligand 0.47

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
TSHR P16473 2/20 0.47
CYP2D6 P10635 1/20 0.47
CYP2C9 P11712 1/20 0.47
CYP2C19 P33261 1/20 0.47
CA2 P00918 1/20 0.35
MAPK1 P28482 1/20 0.35
HSPD1 P10809 1/20 0.33
BLM P54132 1/20 0.33
HSPE1 P61604 1/20 0.33
CHRM1 P11229 2/20 0.32
ADRA1A P35348 2/20 0.32
HMGCR P04035 1/20 0.32
TBXA2R P21731 1/20 0.32
ALDH1A1 P00352 1/20 0.32
AKR1A1 P14550 1/20 0.31
CHRM3 P20309 1/20 0.31
HTR2A P28223 1/20 0.31
HTR2C P28335 1/20 0.31
HRH1 P35367 1/20 0.31
DRD3 P35462 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL19529533 0.84 TSHR (0.39) TSHRCYP2D6CYP2C9CYP2C19CA2
SCHEMBL19530286 0.83 CHRM1 (0.43) TSHRCYP2D6CYP2C9CYP2C19CA2
SCHEMBL15346515 0.78 CYP2D6 (0.38) TSHRCYP2D6CYP2C9CYP2C19CA2
SCHEMBL14670248 0.78 RNPEP (0.40) TSHRCYP2D6CYP2C9CYP2C19CA2
SCHEMBL4578586 0.78 CA2 (0.39) TSHRCYP2D6CYP2C9CYP2C19CA2
SCHEMBL17469430 0.78 CHRM1 (0.35) TSHRCYP2D6CYP2C9CYP2C19CA2
SCHEMBL2035661 0.78 CHRM1 (0.35) TSHRCYP2D6CYP2C9CYP2C19CA2
Hydrochloric Acid SCHEMBL28492070 0.76 CHRM1 (0.33) TSHRCYP2D6CYP2C9CYP2C19CA2
SCHEMBL7638052 0.76 CHRM1 (0.33) TSHRCYP2D6CYP2C9CYP2C19CA2
SCHEMBL15350742 0.76 THRB (0.38) TSHRCYP2D6CYP2C9CYP2C19CA2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 27 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20240027902-A1 CHEMICALLY AMPLIFIED RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2024-01-25 US disclosed
US-20230359119-A1 RESIST COMPOSITION AND PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-11-09 US disclosed
US-11774853-B2 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-10-03 US disclosed
US-20230305394-A1 RESIST COMPOSITION AND PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-09-28 US disclosed
US-20230305393-A1 RESIST COMPOSITION AND PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-09-28 US disclosed
US-20230161252-A1 POSITIVE RESIST COMPOSITION AND PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-05-25 US disclosed
US-20220066319-A1 POSITIVE RESIST MATERIAL AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2022-03-03 US disclosed
US-20220026805-A1 RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2022-01-27 US disclosed
US-11187980-B2 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2021-11-30 US disclosed
US-20210302838-A1 RESIST COMPOSITION AND PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2021-09-30 US disclosed
US-9897914-B2 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2018-02-20 US disclosed
US-20170315442-A1 NOVEL CARBOXYLIC ACID ONIUM SALT, CHEMICALLY AMPLIFIED RESIST COMPOSITION, AND PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-11-02 US disclosed
US-20170184964-A1 RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-06-29 US disclosed
US-20170184962-A1 RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-06-29 US disclosed
US-20170184963-A1 RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-06-29 US disclosed
US-20170174922-A1 CONDUCTIVE MATERIAL AND SUBSTRATE SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-06-22 US disclosed
US-20170130071-A1 CONDUCTIVE MATERIAL AND SUBSTRATE SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-05-11 US disclosed
US-20170130070-A1 CONDUCTIVE MATERIAL AND SUBSTRATE SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-05-11 US disclosed
US-9360753-B2 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2016-06-07 US disclosed
US-20130029270-A1 RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-01-31 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20170315442-A1 NOVEL CARBOXYLIC ACID ONIUM SALT, CHEMICALLY AMPLIFIED RESIST COMPOSITION, AND PATTERN FORMING PROCESS ETV6, ELOVL5, ALAD TSHR 3464/4885CYP2D6 1911/4885CYP2C9 2094/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.