SCHEMBL147382

SCHEMBL147382

Cc1cccc(OC(C)(C)C)c1C

nearest known ligand 0.47

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
MAPT P10636 5/20 0.47
TRPA1 O75762 1/20 0.44
ATM Q13315 1/20 0.44
HTR1B P28222 1/20 0.44
L3MBTL1 Q9Y468 2/20 0.40
CYP1A2 P05177 2/20 0.40
CYP2C19 P33261 2/20 0.40
CYP3A4 P08684 1/20 0.40
CYP2D6 P10635 1/20 0.40
KCNH2 Q12809 1/20 0.40
KEAP1 Q14145 1/20 0.40
POLB P06746 1/20 0.40
KDM4E B2RXH2 1/20 0.38
GAA P10253 1/20 0.38
MEN1 O00255 1/20 0.38
KMT2A Q03164 1/20 0.38
DHFR P00374 1/20 0.37
RAB9A P51151 2/20 0.36
NPC1 O15118 1/20 0.36
CASP3 P42574 1/20 0.36

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL28306903 0.98 MAPT (0.46) MAPTTRPA1ATMHTR1BL3MBTL1
SCHEMBL11553756 0.88 KCNH2 (0.43) MAPTTRPA1ATMHTR1BL3MBTL1
SCHEMBL31606753 0.83 TRPA1 (0.46) MAPTTRPA1ATMHTR1BL3MBTL1
SCHEMBL29690513 0.81 TSHR (0.45) CYP1A2CYP2C19CYP2D6KCNH2KDM4E
SCHEMBL2737142 0.81 TSHR (0.45) CYP1A2CYP2C19CYP2D6KCNH2KDM4E
SCHEMBL4004810 0.80 KCNH2 (0.39) MAPTTRPA1ATMCYP1A2CYP3A4
SCHEMBL13160083 0.80 MAPT (0.46) MAPTTRPA1ATMHTR1BL3MBTL1
SCHEMBL13489641 0.79 NCEH1 (0.32) TRPA1ATMKCNH2ALDH1A1
SCHEMBL8298290 0.78 CYP3A4 (0.52) MAPTL3MBTL1CYP1A2CYP2C19CYP3A4
SCHEMBL4503434 0.78 TRPA1 (0.52) MAPTTRPA1ATMCYP3A4KCNH2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 12 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8426115-B2 Patterning process and resist composition SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-04-23 US claimed
US-20110033803-A1 PATTERNING PROCESS AND RESIST COMPOSITION SHIN-ETSU CHEMICAL CO., LTD. (JP) 2011-02-10 US claimed
US-20100159392-A1 PATTERNING PROCESS AND RESIST COMPOSITION SHIN-ETSU CHEMICAL CO., LTD. (JP) 2010-06-24 US claimed
US-8895231-B2 Patterning process and resist composition SHIN-ETSU CHEMICAL CO., LTD. (JP) 2014-11-25 US disclosed
US-8741546-B2 Patterning process and resist composition SHIN-ETSU CHEMICAL CO., LTD. (JP) 2014-06-03 US disclosed
US-8623590-B2 Pattern forming process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2014-01-07 US disclosed
US-20130209936-A1 PATTERNING PROCESS AND RESIST COMPOSITION SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-08-15 US disclosed
US-8426115-B2 Patterning process and resist composition SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-04-23 US disclosed
US-20120108043-A1 PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-05-03 US disclosed
US-20120058428-A1 PATTERNING PROCESS AND RESIST COMPOSITION SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-03-08 US disclosed
US-20110033803-A1 PATTERNING PROCESS AND RESIST COMPOSITION SHIN-ETSU CHEMICAL CO., LTD. (JP) 2011-02-10 US disclosed
US-20100159392-A1 PATTERNING PROCESS AND RESIST COMPOSITION SHIN-ETSU CHEMICAL CO., LTD. (JP) 2010-06-24 US disclosed