SCHEMBL14827264

SCHEMBL14827264

CCC(C)C(=O)Oc1ccc(OCC(=O)OC(C)(C)C)cc1

nearest known ligand 0.45

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
PTPN1 P18031 3/20 0.44
PSEN1 P49768 3/20 0.42
PSEN2 P49810 3/20 0.42
APH1B Q8WW43 3/20 0.42
NCSTN Q92542 3/20 0.42
APH1A Q96BI3 3/20 0.42
PSENEN Q9NZ42 3/20 0.42
GAA P10253 4/20 0.41
ALDH1A1 P00352 1/20 0.41
TSHR P16473 1/20 0.41
LMNA P02545 1/20 0.41
NPSR1 Q6W5P4 1/20 0.40
CTSK P43235 1/20 0.40
MAPT P10636 1/20 0.40
MEN1 O00255 2/20 0.39
KMT2A Q03164 2/20 0.39
NPC1 O15118 1/20 0.39
RAB9A P51151 1/20 0.39
L3MBTL1 Q9Y468 1/20 0.39
CNR1 P21554 1/20 0.39

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL17577433 0.85 GAA (0.49) GAAALDH1A1TSHRMAPTMEN1
SCHEMBL2608020 0.83 GAA (0.41) PTPN1GAAALDH1A1TSHRLMNA
SCHEMBL9880584 0.82 ELANE (0.57) GAANPSR1MAPTMEN1KMT2A
SCHEMBL10330475 0.80 MAPT (0.43) PTPN1GAAALDH1A1TSHRLMNA
SCHEMBL2608017 0.80 MAPT (0.43) PTPN1GAAALDH1A1TSHRLMNA
SCHEMBL111936 0.80 ALDH1A1 (0.66) PTPN1PSEN1PSEN2APH1BNCSTN
SCHEMBL29319002 0.80 ELANE (0.46) GAAALDH1A1LMNAMAPTKMT2A
SCHEMBL9880585 0.79 ELANE (0.42) GAATSHRNPSR1MEN1KMT2A
SCHEMBL11987556 0.79 GAA (0.40) PTPN1GAAALDH1A1TSHRLMNA
SCHEMBL9772363 0.78 RAB9A (0.52) PTPN1PSEN1PSEN2APH1BNCSTN

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9766547-B2 Pattern forming method, actinic ray-sensitive or radiation-sensitive resin composition, resist film, method of manufacturing electronic device using the same, and electronic device FUJIFILM CORPORATION (JP) 2017-09-19 US disclosed
US-20160011517-A1 PATTERN FORMING METHOD, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, METHOD OF MANUFACTURING ELECTRONIC DEVICE USING THE SAME, AND ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2016-01-14 US disclosed
US-8822129-B2 Pattern forming method, electron beam-sensitive or extreme ultraviolet-sensitive composition, resist film, manufacturing method of electronic device, and electronic device FUJIFILM CORPORATION (JP) 2014-09-02 US disclosed
US-20130084438-A1 PATTERN FORMING METHOD, ELECTRON BEAM-SENSITIVE OR EXTREME ULTRAVIOLET-SENSITIVE COMPOSITION, RESIST FILM, MANUFACTURING METHOD OF ELECTRONIC DEVICE, AND ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2013-04-04 US disclosed