SCHEMBL14828486

SCHEMBL14828486

C=C(C)C(=O)OC(C)(c1ccc(C(F)(F)F)cc1)C1CCC1

nearest known ligand 0.38

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
HSD11B1 P28845 4/20 0.38
CCR1 P32246 1/20 0.36
CCR2 P41597 1/20 0.36
MAPT P10636 1/20 0.34
BACE1 P56817 1/20 0.34
DGAT1 O75907 1/20 0.34
KDM4E B2RXH2 2/20 0.33
ALDH1A1 P00352 2/20 0.33
CES2 O00748 1/20 0.33
CES1 P23141 1/20 0.33
NR4A1 P22736 1/20 0.33
NR4A2 P43354 1/20 0.33
NR4A3 Q92570 1/20 0.33
POLB P06746 1/20 0.33
GAA P10253 1/20 0.33
MAPK1 P28482 1/20 0.33
TDP1 Q9NUW8 1/20 0.33
TEAD1 P28347 1/20 0.33
MEN1 O00255 1/20 0.33
TSHR P16473 1/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL14828483 0.97 CCR1 (0.39) HSD11B1CCR1CCR2MAPTBACE1
SCHEMBL14828494 0.96 CCR1 (0.40) HSD11B1CCR1CCR2KDM4EALDH1A1
SCHEMBL14828489 0.94 BACE1 (0.35) HSD11B1CCR1CCR2MAPTBACE1
SCHEMBL14827346 0.89 MEN1 (0.34) HSD11B1MAPTMAPK1MEN1KMT2A
SCHEMBL14827360 0.88 RAB9A (0.33) HSD11B1CCR1CCR2MAPTKDM4E
SCHEMBL14827350 0.86 NPC1 (0.35) HSD11B1MAPTMAPK1MEN1KMT2A
SCHEMBL14827358 0.85 NPC1 (0.38) HSD11B1MAPTMAPK1MEN1KMT2A
SCHEMBL14827370 0.85 RAB9A (0.36) CCR1CCR2MAPTPOLBKMT2A
SCHEMBL14827365 0.84 RAB9A (0.38) HSD11B1CCR1CCR2MAPTPOLB
SCHEMBL14827344 0.83 MEN1 (0.36) HSD11B1MAPTMAPK1MEN1TSHR

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 7 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-10007178-B2 Positive resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2018-06-26 US disclosed
US-20160048076-A1 POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2016-02-18 US disclosed
US-9140988-B2 Positive resist composition, monomer, polymer, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2015-09-22 US disclosed
US-9040223-B2 Resist composition, patterning process and polymer SHIN-ETSU CHEMICAL CO., LTD. (JP) 2015-05-26 US disclosed
US-20140178820-A1 RESIST COMPOSITION, PATTERNING PROCESS AND POLYMER SHIN-ETSU CHEMICAL CO., LTD. (JP) 2014-06-26 US disclosed
US-20140162188-A1 POSITIVE RESIST COMPOSITION, MONOMER, POLYMER, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2014-06-12 US disclosed
US-20130084527-A1 POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-04-04 US disclosed