Predicted protein targets (top 18)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | MEN1 | O00255 | 5/20 | 0.36 |
| ▸ | KMT2A | Q03164 | 5/20 | 0.36 |
| ▸ | CYP19A1 | P11511 | 1/20 | 0.35 |
| ▸ | MAPK1 | P28482 | 2/20 | 0.35 |
| ▸ | SMN1; SMN2 | Q16637 | 2/20 | 0.35 |
| ▸ | NPC1 | O15118 | 2/20 | 0.35 |
| ▸ | RAB9A | P51151 | 2/20 | 0.35 |
| ▸ | MAPT | P10636 | 1/20 | 0.35 |
| ▸ | XBP1 | P17861 | 1/20 | 0.35 |
| ▸ | HTT | P42858 | 1/20 | 0.35 |
| ▸ | KCNN4 | O15554 | 1/20 | 0.33 |
| ▸ | LMNA | P02545 | 1/20 | 0.32 |
| ▸ | TSHR | P16473 | 1/20 | 0.32 |
| ▸ | NPSR1 | Q6W5P4 | 1/20 | 0.32 |
| ▸ | SSTR3 | P32745 | 1/20 | 0.32 |
| ▸ | L3MBTL1 | Q9Y468 | 1/20 | 0.32 |
| ▸ | KCNH2 | Q12809 | 1/20 | 0.31 |
| ▸ | HSD11B1 | P28845 | 1/20 | 0.31 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL14827346 | 0.94 | MEN1 (0.34) | MEN1KMT2ACYP19A1MAPK1SMN1; SMN2 | |
| SCHEMBL14827350 | 0.94 | NPC1 (0.35) | MEN1KMT2ACYP19A1MAPK1SMN1; SMN2 | |
| SCHEMBL14827358 | 0.93 | NPC1 (0.38) | MEN1KMT2ACYP19A1MAPK1SMN1; SMN2 | |
| SCHEMBL14828489 | 0.89 | BACE1 (0.35) | MAPK1MAPTHTTHSD11B1 | |
| SCHEMBL14827366 | 0.87 | CA1 (0.34) | KMT2ASMN1; SMN2NPC1RAB9AMAPT | |
| SCHEMBL14828486 | 0.83 | HSD11B1 (0.38) | MEN1KMT2AMAPK1MAPTTSHR | |
| SCHEMBL14828483 | 0.83 | CCR1 (0.39) | MAPTHSD11B1 | |
| SCHEMBL14828494 | 0.82 | CCR1 (0.40) | MEN1KMT2ATSHRHSD11B1 | |
| SCHEMBL14827370 | 0.82 | RAB9A (0.36) | KMT2ASMN1; SMN2NPC1RAB9AMAPT | |
| SCHEMBL14827360 | 0.82 | RAB9A (0.33) | KMT2ASMN1; SMN2NPC1RAB9AMAPT |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 17 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-10007178-B2 | Positive resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2018-06-26 | — | — | US | disclosed |
| US-20160048076-A1 | POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2016-02-18 | — | — | US | disclosed |
| US-20160048076-A1 | POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2016-02-18 | — | — | US | disclosed |
| US-9201300-B2 | Resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2015-12-01 | — | — | US | disclosed |
| US-9201300-B2 | Resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2015-12-01 | — | — | US | disclosed |
| US-9140988-B2 | Positive resist composition, monomer, polymer, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2015-09-22 | — | — | US | disclosed |
| US-9140988-B2 | Positive resist composition, monomer, polymer, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2015-09-22 | — | — | US | disclosed |
| US-9040223-B2 | Resist composition, patterning process and polymer | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2015-05-26 | — | — | US | disclosed |
| US-9040223-B2 | Resist composition, patterning process and polymer | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2015-05-26 | — | — | US | disclosed |
| US-20140178818-A1 | RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2014-06-26 | — | — | US | disclosed |
| US-20140178818-A1 | RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2014-06-26 | — | — | US | disclosed |
| US-20140178820-A1 | RESIST COMPOSITION, PATTERNING PROCESS AND POLYMER | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2014-06-26 | — | — | US | disclosed |
| US-20140178820-A1 | RESIST COMPOSITION, PATTERNING PROCESS AND POLYMER | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2014-06-26 | — | — | US | disclosed |
| US-20140162188-A1 | POSITIVE RESIST COMPOSITION, MONOMER, POLYMER, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2014-06-12 | — | — | US | disclosed |
| US-20140162188-A1 | POSITIVE RESIST COMPOSITION, MONOMER, POLYMER, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2014-06-12 | — | — | US | disclosed |
| US-20130084527-A1 | POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2013-04-04 | — | — | US | disclosed |
| US-20130084527-A1 | POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2013-04-04 | — | — | US | disclosed |