SCHEMBL14828489

SCHEMBL14828489

C=C(C)C(=O)OC(C)(c1ccc(C(F)(F)F)cc1)C1CC1

nearest known ligand 0.35

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
BACE1 P56817 1/20 0.35
CCR1 P32246 1/20 0.35
CCR2 P41597 1/20 0.35
CES2 O00748 1/20 0.35
CES1 P23141 1/20 0.35
NR4A1 P22736 1/20 0.35
NR4A2 P43354 1/20 0.35
NR4A3 Q92570 1/20 0.35
GAA P10253 2/20 0.34
KDM4E B2RXH2 1/20 0.34
ALDH1A1 P00352 1/20 0.34
POLB P06746 1/20 0.34
MAPK1 P28482 1/20 0.34
TDP1 Q9NUW8 1/20 0.34
TEAD1 P28347 1/20 0.34
EPHX2 P34913 1/20 0.34
HTT P42858 1/20 0.34
HSD11B1 P28845 1/20 0.34
MAPT P10636 1/20 0.33
MAOB P27338 1/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL14828483 0.94 CCR1 (0.39) BACE1CCR1CCR2CES2CES1
SCHEMBL14828486 0.94 HSD11B1 (0.38) BACE1CCR1CCR2CES2CES1
SCHEMBL14828494 0.93 CCR1 (0.40) CCR1CCR2KDM4EALDH1A1HSD11B1
SCHEMBL14827344 0.89 MEN1 (0.36) MAPK1HTTHSD11B1MAPT
SCHEMBL14827366 0.87 CA1 (0.34) KDM4EHTTMAPTCA1CA2
SCHEMBL14827350 0.83 NPC1 (0.35) MAPK1HTTHSD11B1MAPT
SCHEMBL14827346 0.83 MEN1 (0.34) MAPK1HTTHSD11B1MAPT
SCHEMBL14827358 0.82 NPC1 (0.38) MAPK1EPHX2HTTHSD11B1MAPT
SCHEMBL14827360 0.82 RAB9A (0.33) CCR1CCR2GAAKDM4EPOLB
SCHEMBL14827370 0.82 RAB9A (0.36) CCR1CCR2POLBMAPTCA1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 9 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-10007178-B2 Positive resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2018-06-26 US disclosed
US-20160048076-A1 POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2016-02-18 US disclosed
US-9201300-B2 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2015-12-01 US disclosed
US-9140988-B2 Positive resist composition, monomer, polymer, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2015-09-22 US disclosed
US-9040223-B2 Resist composition, patterning process and polymer SHIN-ETSU CHEMICAL CO., LTD. (JP) 2015-05-26 US disclosed
US-20140178818-A1 RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2014-06-26 US disclosed
US-20140178820-A1 RESIST COMPOSITION, PATTERNING PROCESS AND POLYMER SHIN-ETSU CHEMICAL CO., LTD. (JP) 2014-06-26 US disclosed
US-20140162188-A1 POSITIVE RESIST COMPOSITION, MONOMER, POLYMER, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2014-06-12 US disclosed
US-20130084527-A1 POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-04-04 US disclosed