SCHEMBL1484136

SCHEMBL1484136

OCCc1cccc2nc3ccccc3cc12

nearest known ligand 0.51

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
ALDH1A1 P00352 6/20 0.51
KDM4E B2RXH2 5/20 0.51
HPGD P15428 4/20 0.51
GAA P10253 4/20 0.51
GLA P06280 3/20 0.51
POLB P06746 3/20 0.51
KMT2A Q03164 3/20 0.51
LMNA P02545 2/20 0.51
RAB9A P51151 2/20 0.51
NPC1 O15118 1/20 0.51
PTBP1 P26599 1/20 0.51
RCE1 Q9Y256 1/20 0.51
MAPT P10636 1/20 0.47
ACHE P22303 1/20 0.47
RAD52 P43351 2/20 0.41
MITF O75030 1/20 0.41
TTR P02766 1/20 0.41
MEN1 O00255 1/20 0.41
IDO1 P14902 1/20 0.39
TOP2A P11388 1/20 0.38

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL30376957 1.00 ALDH1A1 (0.51) ALDH1A1KDM4EHPGDGAAGLA
SCHEMBL23421423 0.89 KMT2A (0.58) ALDH1A1KDM4EHPGDGAAGLA
SCHEMBL29631756 0.89 KMT2A (0.58) ALDH1A1KDM4EHPGDGAAGLA
SCHEMBL6432006 0.87 ALDH1A1 (0.46) ALDH1A1KDM4EHPGDGAAGLA
SCHEMBL31574332 0.86 ALDH1A1 (0.55) ALDH1A1KDM4EHPGDGAAGLA
SCHEMBL22497413 0.86 ALDH1A1 (0.55) ALDH1A1KDM4EHPGDGAAGLA
SCHEMBL9936015 0.86 ALDH1A1 (0.55) ALDH1A1KDM4EHPGDGAAGLA
SCHEMBL29629266 0.84 ALDH1A1 (0.53) ALDH1A1KDM4EHPGDGAAGLA
SCHEMBL30434810 0.84 ALDH1A1 (0.53) ALDH1A1KDM4EHPGDGAAGLA
SCHEMBL28491074 0.84 ALDH1A1 (0.53) ALDH1A1KDM4EHPGDGAAGLA

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 10 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-111777556-B Method for preparing acridine 9-carboxylic acid by oxidation method 遂成药业股份有限公司 2022-08-19 CN disclosed
CN-111562720-A Photosensitizing chemically amplified resist material, method for forming pattern, semiconductor device, mask for lithography, and template for nanoimprint 东京毅力科创株式会社 2020-08-21 CN disclosed
CN-106030417-B Photosensitizing chemically amplified resist material, method for forming pattern using same, semiconductor device, mask for lithography, and method for manufacturing template for nanoimprinting 东京毅力科创株式会社 2020-02-28 CN disclosed
EP-1580598-B1 Positive resist composition for immersion exposure and pattern-forming method using the same FUJIFILM CORP (JP) 2016-10-12 EP disclosed
US-9023576-B2 Positive resist composition for immersion exposure and pattern-forming method using the same FUJIFILM CORPORATION (JP) 2015-05-05 US disclosed
US-20110076622-A1 POSITIVE RESIST COMPOSITION FOR IMMERSION EXPOSURE AND PATTERN-FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2011-03-31 US disclosed
US-7906268-B2 Positive resist composition for immersion exposure and pattern-forming method using the same FUJIFILM CORPORATION (JP) 2011-03-15 US disclosed
EP-1580598-A2 Positive resist composition for immersion exposure and pattern-forming method using the same Fuji Photo Film Co. Ltd. (JP) 2005-09-28 EP disclosed
US-20050208419-A1 Fluoropolymer containing unsaturated monomer with a adamantyl, decalin, norbornyl, cedrol , cyclohexyl, cycloheptyl, cyclooctyl , a cyclodecanyl, cyclododecanyl and/or tricyclodecanyl group; sulfonium type compound generates acid upon exposure to actinic radiation; semiconductor, integrated circuits FUJI PHOTO FILM CO., LTD. 2005-09-22 US disclosed
US-5193024-A Forming bubbles in a dye solution within a cell and focusing a beam from a laser, vaporization solvent and illumination of solution E. I. DU PONT DE NEMOURS AND COMPANY (US) 1993-03-09 US disclosed