Predicted protein targets (top 6)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | ALDH1A1 | P00352 | 1/20 | 0.30 |
| ▸ | GLA | P06280 | 1/20 | 0.30 |
| ▸ | HPGD | P15428 | 1/20 | 0.30 |
| ▸ | HTT | P42858 | 1/20 | 0.30 |
| ▸ | MEN1 | O00255 | 1/20 | 0.30 |
| ▸ | KMT2A | Q03164 | 1/20 | 0.30 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL10262727 | 0.90 | ALDH1A1 (0.31) | ALDH1A1GLAHPGDHTTMEN1 | |
| SCHEMBL12997474 | 0.88 | ALDH1A1 (0.30) | ALDH1A1GLAHPGDHTTMEN1 | |
| SCHEMBL20192372 | 0.86 | ALDH1A1 (0.32) | ALDH1A1GLAHPGDHTTMEN1 | |
| SCHEMBL47482 | 0.86 | HMGCR (0.37) | ALDH1A1GLAHPGDHTTMEN1 | |
| SCHEMBL16063447 | 0.84 | ALDH1A1 (0.30) | ALDH1A1GLAHPGDHTTMEN1 | |
| SCHEMBL24861755 | 0.83 | OPRK1 (0.34) | ALDH1A1GLAHPGDHTTMEN1 | |
| SCHEMBL15216837 | 0.83 | ALDH1A1 (0.34) | ALDH1A1GLAHPGDHTTMEN1 | |
| SCHEMBL13648552 | 0.83 | OPRK1 (0.34) | ALDH1A1GLAHPGDHTTMEN1 | |
| SCHEMBL14219797 | 0.83 | OPRK1 (0.34) | ALDH1A1GLAHPGDHTTMEN1 | |
| SCHEMBL12335256 | 0.83 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 2 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-8815492-B2 | Chemically amplified positive resist composition for ArF immersion lithography and pattern forming process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2014-08-26 | — | — | US | disclosed |
| US-20130108964-A1 | CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION FOR ArF IMMERSION LITHOGRAPHY AND PATTERN FORMING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2013-05-02 | — | — | US | disclosed |