Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | HMGCR | P04035 | 6/20 | 0.37 |
| ▸ | CYP3A4 | P08684 | 3/20 | 0.33 |
| ▸ | ALDH1A1 | P00352 | 3/20 | 0.33 |
| ▸ | USP2 | O75604 | 2/20 | 0.33 |
| ▸ | TSHR | P16473 | 2/20 | 0.33 |
| ▸ | MEN1 | O00255 | 2/20 | 0.33 |
| ▸ | KMT2A | Q03164 | 2/20 | 0.33 |
| ▸ | KDM4E | B2RXH2 | 1/20 | 0.33 |
| ▸ | SMN1; SMN2 | Q16637 | 1/20 | 0.33 |
| ▸ | NR1I2 | O75469 | 1/20 | 0.33 |
| ▸ | ABCB11 | O95342 | 1/20 | 0.33 |
| ▸ | NR3C1 | P04150 | 1/20 | 0.33 |
| ▸ | PGR | P06401 | 1/20 | 0.33 |
| ▸ | ABCB1 | P08183 | 1/20 | 0.33 |
| ▸ | ADORA3 | P0DMS8 | 1/20 | 0.33 |
| ▸ | CYP2C8 | P10632 | 1/20 | 0.33 |
| ▸ | CHRM1 | P11229 | 1/20 | 0.33 |
| ▸ | ADRB3 | P13945 | 1/20 | 0.33 |
| ▸ | GABRA1 | P14867 | 1/20 | 0.33 |
| ▸ | ADRA2B | P18089 | 1/20 | 0.33 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL6368555 | 0.91 | HMGCR (0.38) | HMGCRCYP3A4ALDH1A1USP2TSHR | |
| SCHEMBL6368509 | 0.91 | HMGCR (0.36) | HMGCRCYP3A4ALDH1A1USP2TSHR | |
| SCHEMBL14750836 | 0.90 | HMGCR (0.31) | HMGCR | |
| SCHEMBL13324964 | 0.90 | HMGCR (0.35) | HMGCRCYP3A4ALDH1A1USP2TSHR | |
| SCHEMBL12405790 | 0.89 | HMGCR (0.38) | HMGCRCYP3A4ALDH1A1USP2TSHR | |
| SCHEMBL9244154 | 0.89 | HMGCR (0.38) | HMGCRCYP3A4ALDH1A1USP2TSHR | |
| SCHEMBL13294326 | 0.89 | HMGCR (0.34) | HMGCRCYP3A4ALDH1A1USP2TSHR | |
| SCHEMBL75937 | 0.89 | ALDH1A1 (0.32) | HMGCRALDH1A1MEN1KMT2AGLA | |
| SCHEMBL16063447 | 0.89 | ALDH1A1 (0.30) | ALDH1A1MEN1KMT2AGLAHPGD | |
| SCHEMBL20192372 | 0.89 | ALDH1A1 (0.32) | ALDH1A1MEN1KMT2AGLAHPGD |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 1231 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-12032288-B2 | Actinic ray-sensitive or radiation-sensitive resin composition, resist film, pattern forming method, and method for manufacturing electronic device | FUJIFILM CORPORATION (JP) | 2024-07-09 | — | — | US | disclosed |
| US-20240027908-A1 | ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, PATTERN FORMING METHOD, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2024-01-25 | — | — | US | disclosed |
| US-20230400767-A1 | RADIATION-SENSITIVE RESIN COMPOSITION, METHOD OF FORMING RESIST PATTERN, POLYMER, AND COMPOUND | JSR CORPORATION (JP) | 2023-12-14 | — | — | US | disclosed |
| US-20230400769-A1 | ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE FILM, PATTERN FORMING METHOD, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2023-12-14 | — | — | US | disclosed |
| US-20230400768-A1 | RADIATION-SENSITIVE COMPOSITION AND METHOD OF FORMING RESIST PATTERN | JSR CORPORATION (JP) | 2023-12-14 | — | — | US | disclosed |
| US-20230384674-A1 | ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, PATTERN FORMING METHOD, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2023-11-30 | — | — | US | disclosed |
| US-20230367212-A1 | PATTERN FORMING METHOD AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2023-11-16 | — | — | US | disclosed |
| US-11803122-B2 | Chemical amplification-type photosensitive composition, photosensitive dry film, production method of patterned resist layer, production method of plated molded article, compound, and production method of compound | TOKYO OHKA KOGYO CO., LTD. (JP) | 2023-10-31 | — | — | US | disclosed |
| US-20230273521-A1 | CHEMICALLY AMPLIFIED PHOTOSENTIVE COMPOSITION, PHOTOSENSITIVE DRY FILM, PRODUCTION METHOD OF SUBSTRATE HAVING TEMPLATE FOR PLATING, AND PRODUCTION METHOD OF PLATED ARTICLE | TOKYO OHKA KOGYO CO., LTD. (JP) | 2023-08-31 | — | — | US | disclosed |
| US-20230259029-A1 | ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, PATTERN FORMING METHOD, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2023-08-17 | — | — | US | disclosed |
| US-20070072115-A1 | Positive resist compositions and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2007-03-29 | — | — | US | disclosed |
| US-20070072118-A1 | Positive photosensitive composition and pattern forming method using the same | FUJI PHOTO FILM CO., LTD. | 2007-03-29 | — | — | US | disclosed |
| US-20070065752-A1 | Positive resist composition and pattern forming method using the same | FUJI PHOTO FILM CO., LTD. | 2007-03-22 | — | — | US | disclosed |
| US-20070065753-A1 | Positive resist composition for immersion exposure and pattern forming method using the same | FUJI PHOTO FILM CO., LTD. | 2007-03-22 | — | — | US | disclosed |
| US-20070059639-A1 | Positive resist composition and pattern-forming method using the same | FUJI PHOTO FILM CO., LTD. | 2007-03-15 | — | — | US | disclosed |
| US-7189492-B2 | Photosensitive composition and pattern forming method using the same | FUJI PHOTO FILM CO., LTD. (JP) | 2007-03-13 | — | — | US | disclosed |
| US-20070054217-A1 | Positive photosensitive composition and pattern-forming method using the same | FUJI PHOTO FILM CO., LTD. | 2007-03-08 | — | — | US | disclosed |
| US-20070031757-A1 | Positive photosensitive composition and method of pattern formation with the same | FUJI PHOTO FILM CO., LTD. | 2007-02-08 | — | — | US | disclosed |
| US-20070026343-A1 | Chemical amplification-type resist composition and production process thereof | FUJI PHOTO FILM CO., LTD. | 2007-02-01 | — | — | US | disclosed |
| US-7157207-B2 | Polymer, resist material and patterning processing | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2007-01-02 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (2 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20230400767-A1 | RADIATION-SENSITIVE RESIN COMPOSITION, METHOD OF FORMING RESIST PATTERN, POLYMER, AND COMPOUND | RER1, RAD51, RFT1 | HMGCR 2954/4885CYP3A4 3647/4885ALDH1A1 1315/4885 |
| US-12032288-B2 | Actinic ray-sensitive or radiation-sensitive resin composition, resist film, pattern forming method, and method for manufacturing electronic device | RER1, COL1A1, RAD51 | HMGCR 3634/4885CYP3A4 3673/4885ALDH1A1 762/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.