SCHEMBL1506846

SCHEMBL1506846

CCC(CC)C(=O)O.[Nd]

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL6114 0.97 — —
SCHEMBL6912035 0.93 — —
SCHEMBL5969550 0.93 — —
SCHEMBL1506849 0.93 — —
SCHEMBL1506863 0.93 — —
SCHEMBL1506866 0.93 — —
SCHEMBL1506823 0.93 — —
SCHEMBL98743 0.93 — —
SCHEMBL2467242 0.93 — —
Ammonia Solution, Strong SCHEMBL5978991 0.93 — —

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 27 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2298714-B1 COMPOSITION FOR FERROELECTRIC THIN FILM FORMATION, METHOD FOR FERROELECTRIC THIN FILM FORMATION, AND FERROELECTRIC THIN FILM FORMED BY THE METHOD MITSUBISHI MATERIALS CORP (JP) 2017-07-05 — — EP disclosed
CN-104446463-B Composition for ferroelectric thin film formation, method for ferroelectric thin film formation, and ferroelectric thin film formed by the method 三菱综合材料株式会社 2017-04-12 — — CN disclosed
US-9502636-B2 Composition for ferroelectric thin film formation, method for forming ferroelectric thin film, and ferroelectric thin film formed by the method thereof MITSUBISHI MATERIALS CORPORATION (JP) 2016-11-22 — — US disclosed
CN-103360066-B The formation method of Strong dielectric film formation composition, Strong dielectric film and the Strong dielectric film formed by the method MITSUBISHI MATERIALS CORP. (JP) 2015-11-18 — — CN disclosed
US-9005358-B2 Composition for ferroelectric thin film formation, method for forming ferroelectric thin film, and ferroelectric thin film formed by the method thereof MITSUBISHI MATERIALS CORPORATION (JP) 2015-04-14 — — US disclosed
CN-104446463-A Composition for ferroelectric thin film formation, method for ferroelectric thin film formation, and ferroelectric thin film formed by the method MITSUBISHI MATERIALS CORP 2015-03-25 — — CN disclosed
CN-102173795-B Composition for ferroelectric thin film formation, method for forming ferroelectric thin film, and ferroelectric thin film formed by the method thereof MITSUBISHI MATERIALS CORP 2014-12-10 — — CN disclosed
US-20140349834-A1 COMPOSITION FOR FERROELECTRIC THIN FILM FORMATION, METHOD FOR FORMING FERROELECTRIC THIN FILM, AND FERROELECTRIC THIN FILM FORMED BY THE METHOD THEREOF MITSUBISHI MATERIALS CORP (JP) 2014-11-27 — — US disclosed
US-20140349139-A1 COMPOSITION FOR FERROELECTRIC THIN FILM FORMATION, METHOD FOR FORMING FERROELECTRIC THIN FILM, AND FERROELECTRIC THIN FILM FORMED BY THE METHOD THEREOF MITSUBISHI MATERIALS CORPORATION (JP) 2014-11-27 — — US disclosed
US-8859051-B2 Composition for ferroelectric thin film formation, method for forming ferroelectric thin film and ferroelectric thin film formed by the method thereof MITSUBISHI MATERIALS CORPORATION (JP) 2014-10-14 — — US disclosed
CN-102046563-A Composition for forming ferroelectric thin film, method for forming ferroelectric thin film, and ferroelectric thin film formed by the method MITSUBISHI MATERIALS CORP 2011-05-04 — — CN disclosed
US-20110098173-A1 Composition for ferroelectric thin film formation, method for forming ferroelectric thin film, and ferroelectric thin film formed by the method thereof STMicroelectronics(Tours) SAS (FR) 2011-04-28 — — US disclosed
EP-2298714-A1 COMPOSITION FOR FERROELECTRIC THIN FILM FORMATION, METHOD FOR FERROELECTRIC THIN FILM FORMATION, AND FERROELECTRIC THIN FILM FORMED BY THE METHOD Mitsubishi Materials Corporation (JP) 2011-03-23 — — EP disclosed
CN-1427854-A Method for polymerizing conjugated diolefins (dienes) with catalysts of rare earths in presence of vinyl aromatic solvents BAYER AG (DE) 2003-07-02 — — CN disclosed
US-20030050183-A1 Process for the preparation of diene polymers BAYER INC. (CA) 2003-03-13 — — US disclosed
EP-1270612-A1 Process for the preparation of diene polymers Bayer Inc. (CA) 2003-01-02 — — EP disclosed
CN-1351618-A Method for producing thermoplastic molding materials using rubber solutions BAYER AG (DE) 2002-05-29 — — CN disclosed
CN-1350560-A Method for producing thermoplastic molding material using rubber solutions BAYER AG (DE) 2002-05-22 — — CN disclosed
CN-1309674-A Polymerization of Conjugated Dienes Using Rare Earth Catalysts in the Presence of Vinyl Aromatic Solvents BAYER AG (DE) 2001-08-22 — — CN disclosed
CN-1286703-A Catalyst components for polymerization of dienes, catalyst obtained therefrom, and process for preparation of polydienes using same MONTELL TECHNOLOGY COMPANY BV (NL) 2001-03-07 — — CN disclosed
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