⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL6114 | 0.97 | — | — | |
| SCHEMBL98743 | 0.93 | — | — | |
| SCHEMBL1506823 | 0.93 | — | — | |
| Ammonia Solution, Strong SCHEMBL5978991 | 0.93 | — | — | |
| SCHEMBL1506846 | 0.93 | — | — | |
| SCHEMBL6912035 | 0.93 | — | — | |
| SCHEMBL2467242 | 0.93 | — | — | |
| SCHEMBL1506863 | 0.93 | — | — | |
| SCHEMBL5969550 | 0.93 | — | — | |
| SCHEMBL9396203 | 0.93 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 23 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| EP-2436661-B1 | Composition for ferroelectric thin film formation and method for forming ferroelectric thin film | MITSUBISHI MATERIALS CORP (JP) | 2016-03-30 | — | — | EP | claimed |
| CN-104446463-B | Composition for ferroelectric thin film formation, method for ferroelectric thin film formation, and ferroelectric thin film formed by the method | 三菱综合材料株式会社 | 2017-04-12 | — | — | CN | disclosed |
| US-9502636-B2 | Composition for ferroelectric thin film formation, method for forming ferroelectric thin film, and ferroelectric thin film formed by the method thereof | MITSUBISHI MATERIALS CORPORATION (JP) | 2016-11-22 | — | — | US | disclosed |
| EP-2436661-B1 | Composition for ferroelectric thin film formation and method for forming ferroelectric thin film | MITSUBISHI MATERIALS CORP (JP) | 2016-03-30 | — | — | EP | disclosed |
| CN-103360066-B | The formation method of Strong dielectric film formation composition, Strong dielectric film and the Strong dielectric film formed by the method | MITSUBISHI MATERIALS CORP. (JP) | 2015-11-18 | — | — | CN | disclosed |
| US-9005358-B2 | Composition for ferroelectric thin film formation, method for forming ferroelectric thin film, and ferroelectric thin film formed by the method thereof | MITSUBISHI MATERIALS CORPORATION (JP) | 2015-04-14 | — | — | US | disclosed |
| CN-104446463-A | Composition for ferroelectric thin film formation, method for ferroelectric thin film formation, and ferroelectric thin film formed by the method | MITSUBISHI MATERIALS CORP | 2015-03-25 | — | — | CN | disclosed |
| CN-102173795-B | Composition for ferroelectric thin film formation, method for forming ferroelectric thin film, and ferroelectric thin film formed by the method thereof | MITSUBISHI MATERIALS CORP | 2014-12-10 | — | — | CN | disclosed |
| US-20140349834-A1 | COMPOSITION FOR FERROELECTRIC THIN FILM FORMATION, METHOD FOR FORMING FERROELECTRIC THIN FILM, AND FERROELECTRIC THIN FILM FORMED BY THE METHOD THEREOF | MITSUBISHI MATERIALS CORP (JP) | 2014-11-27 | — | — | US | disclosed |
| US-20140349139-A1 | COMPOSITION FOR FERROELECTRIC THIN FILM FORMATION, METHOD FOR FORMING FERROELECTRIC THIN FILM, AND FERROELECTRIC THIN FILM FORMED BY THE METHOD THEREOF | MITSUBISHI MATERIALS CORPORATION (JP) | 2014-11-27 | — | — | US | disclosed |
| US-20130295414-A1 | COMPOSITION FOR FERROELECTRIC THIN FILM FORMATION, METHOD FOR FORMING FERROELECTRIC THIN FILM, AND FERROELECTRIC THIN FILM FORMED BY THE METHOD THEREOF | MITSUBISHI MATERIALS CORP (JP) | 2013-11-07 | — | — | US | disclosed |
| CN-103360066-A | Composition for ferroelectric thin film formation, method for forming ferroelectric thin film, and ferroelectric thin film formed by the method thereof | MITSUBISHI MATERIALS CORP | 2013-10-23 | — | — | CN | disclosed |
| CN-102173795-A | Composition for ferroelectric thin film formation, method for forming ferroelectric thin film, and ferroelectric thin film formed by the method thereof | MITSUBISHI MATERIALS CORP | 2011-09-07 | — | — | CN | disclosed |
| US-20110177235-A1 | COMPOSITION FOR FERROELECTRIC THIN FILM FORMATION, METHOD FOR FORMING FERROELECTRIC THIN FILM, AND FERROELECTRIC THIN FILM FORMED BY THE METHOD THEREOF | MITSUBISHI MATERIALS CORPORATION (JP) | 2011-07-21 | — | — | US | disclosed |
| EP-2343268-A1 | Composition for ferroelectric thin film formation, method for forming ferroelectric thin film, and ferroelectric thin film formed by the method thereof | Mitsubishi Materials Corporation (JP) | 2011-07-13 | — | — | EP | disclosed |
| CN-102046563-A | Composition for forming ferroelectric thin film, method for forming ferroelectric thin film, and ferroelectric thin film formed by the method | MITSUBISHI MATERIALS CORP | 2011-05-04 | — | — | CN | disclosed |
| US-20110098173-A1 | Composition for ferroelectric thin film formation, method for forming ferroelectric thin film, and ferroelectric thin film formed by the method thereof | STMicroelectronics(Tours) SAS (FR) | 2011-04-28 | — | — | US | disclosed |
| EP-2298714-A1 | COMPOSITION FOR FERROELECTRIC THIN FILM FORMATION, METHOD FOR FERROELECTRIC THIN FILM FORMATION, AND FERROELECTRIC THIN FILM FORMED BY THE METHOD | Mitsubishi Materials Corporation (JP) | 2011-03-23 | — | — | EP | disclosed |
| US-5807495-A | Bi-based dielectric thin films, and compositions and method for forming them | MITSUBISHI MATERIALS CORPORATION (JP) | 1998-09-15 | — | — | US | disclosed |
| US-5630872-A | METAL ALKOXIDES, NITRO COMPOUNDS | MITSUBISHI MATERIALS CORPORATION (JP) | 1997-05-20 | — | — | US | disclosed |