SCHEMBL98743

SCHEMBL98743

CCC(CC)C(=O)O.[Cu]

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL6114 0.97 — —
SCHEMBL6912035 0.93 — —
SCHEMBL1506823 0.93 — —
SCHEMBL9396203 0.93 — —
SCHEMBL1506846 0.93 — —
SCHEMBL1506863 0.93 — —
SCHEMBL1506866 0.93 — —
SCHEMBL5969550 0.93 — —
SCHEMBL2467242 0.93 — —
SCHEMBL1506849 0.93 — —

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 45 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-103177797-B The composition for forming dielectric film, the dielectric film for forming the method for dielectric film and being formed by methods described 三菱综合材料株式会社 2017-10-10 — — CN claimed
EP-2431986-B1 Dielectric-thin-film forming composition, method of forming dielectric thin film, and dielectric thin film formed by the method MITSUBISHI MATERIALS CORP (JP) 2017-06-21 — — EP claimed
US-9595393-B2 Dielectric-thin-film forming composition, method of forming dielectric thin film, and dielectric thin film formed by the method MITSUBISHI MATERIALS CORPORATION (JP) 2017-03-14 — — US claimed
US-9018118-B2 Dielectric thin film-forming composition, method of forming dielectric thin film and dielectric thin film formed by the method MITSUBISHI MATERIALS CORPORATION (JP) 2015-04-28 — — US claimed
EP-2608219-B1 Dielectric thin film-forming composition, method of forming dielectric thin film and dielectric thin film formed by the method MITSUBISHI MATERIALS CORP (JP) 2015-03-04 — — EP claimed
CN-103177797-A Dielectric thin film-forming composition, method of forming dielectric thin film and dielectric thin film formed by the method MITSUBISHI MATERIALS CORP 2013-06-26 — — CN claimed
EP-2608219-A1 Dielectric thin film-forming composition, method of forming dielectric thin film and dielectric thin film formed by the method Mitsubishi Materials Corporation (JP) 2013-06-26 — — EP claimed
US-20130155571-A1 DIELECTRIC THIN FILM-FORMING COMPOSITION, METHOD OF FORMING DIELECTRIC THIN FILM AND DIELECTRIC THIN FILM FORMED BY THE METHOD STMicroelectronics(Tours) SAS (FR) 2013-06-20 — — US claimed
CN-103068807-A Method for producing phenyl-substituted heterocyclic derivative by means of coupling method using a palladium compound TEIJIN PHARMA LTD 2013-04-24 — — CN claimed
CN-102436866-A Dielectric film-forming composition, method for forming dielectric film and dielectric film formed by the method MITSUBISHI MATERIALS CORP 2012-05-02 — — CN claimed
EP-2431986-A1 Dielectric-thin-film forming composition, method of forming dielectric thin film, and dielectric thin film formed by the method Mitsubishi Materials Corporation (JP) 2012-03-21 — — EP claimed
US-20120055372-A1 DIELECTRIC-THIN-FILM FORMING COMPOSITION, METHOD OF FORMING DIELECTRIC THIN FILM, AND DIELECTRIC THIN FILM FORMED BY THE METHOD MITSUBISHI MATERIALS CORPORATION (JP) 2012-03-08 — — US claimed
CN-107073516-B Method for producing structure having concave pattern, resin composition, method for forming conductive film, electronic circuit, and electronic device JSR株式会社 2020-09-15 — — CN disclosed
CN-105143977-B Method for producing substrate having concave pattern, composition, method for forming conductive film, electronic circuit, and electronic device JSR株式会社 2020-01-07 — — CN disclosed
EP-3409729-B1 ELECTROCONDUCTIVE COMPOSITION, PRODUCTION PROCESS THEREFOR, AND ELECTROCONDUCTIVE MATERIAL TOYO INK SC HOLDINGS CO LTD (JP) 2019-12-18 — — EP disclosed
US-10392699-B2 Method for manufacturing structure having recessed pattern, resin composition, method for forming electroconductive film, electronic circuit, and electronic device JSR CORPORATION (JP) 2019-08-27 — — US disclosed
CN-102436866-A Dielectric film-forming composition, method for forming dielectric film and dielectric film formed by the method MITSUBISHI MATERIALS CORP 2012-05-02 — — CN disclosed
EP-2431986-A1 Dielectric-thin-film forming composition, method of forming dielectric thin film, and dielectric thin film formed by the method Mitsubishi Materials Corporation (JP) 2012-03-21 — — EP disclosed
US-20120055372-A1 DIELECTRIC-THIN-FILM FORMING COMPOSITION, METHOD OF FORMING DIELECTRIC THIN FILM, AND DIELECTRIC THIN FILM FORMED BY THE METHOD MITSUBISHI MATERIALS CORPORATION (JP) 2012-03-08 — — US disclosed
EP-2426684-A1 Dielectric-thin-film forming composition, method of forming dielectric thin film, and dielectric thin film formed by the method MITSUBISHI MATERIALS CORPORATION (JP) 2012-03-07 — — EP disclosed
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