Predicted protein targets (top 16)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | CA2 | P00918 | 4/20 | 0.58 |
| ▸ | TSHR | P16473 | 3/20 | 0.57 |
| ▸ | CYP3A4 | P08684 | 2/20 | 0.57 |
| ▸ | NFKB1 | P19838 | 2/20 | 0.57 |
| ▸ | NPSR1 | Q6W5P4 | 2/20 | 0.57 |
| ▸ | USP2 | O75604 | 1/20 | 0.42 |
| ▸ | MAPK1 | P28482 | 1/20 | 0.39 |
| ▸ | CA1 | P00915 | 3/20 | 0.37 |
| ▸ | SLC1A3 | P43003 | 1/20 | 0.37 |
| ▸ | SLC1A2 | P43004 | 1/20 | 0.37 |
| ▸ | SLC1A1 | P43005 | 1/20 | 0.37 |
| ▸ | FFAR3 | O14843 | 1/20 | 0.36 |
| ▸ | HDAC3 | O15379 | 1/20 | 0.36 |
| ▸ | HDAC1 | Q13547 | 1/20 | 0.36 |
| ▸ | HDAC2 | Q92769 | 1/20 | 0.36 |
| ▸ | HDAC8 | Q9BY41 | 1/20 | 0.36 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| Zinc Ion SCHEMBL2355344 | 0.94 | CA2 (0.58) | CA2TSHRCYP3A4NFKB1NPSR1 | |
| SCHEMBL3343198 | 0.94 | CA2 (0.58) | CA2TSHRCYP3A4NFKB1NPSR1 | |
| SCHEMBL9396196 | 0.94 | CA2 (0.58) | CA2TSHRCYP3A4NFKB1NPSR1 | |
| SCHEMBL17178412 | 0.94 | CA2 (0.58) | CA2TSHRCYP3A4NFKB1NPSR1 | |
| SCHEMBL98742 | 0.94 | CA2 (0.58) | CA2TSHRCYP3A4NFKB1NPSR1 | |
| Potassium Ion SCHEMBL267337 | 0.94 | — | — | |
| SCHEMBL5079455 | 0.94 | CA2 (0.58) | CA2TSHRCYP3A4NFKB1NPSR1 | |
| SCHEMBL8574352 | 0.94 | CA2 (0.58) | CA2TSHRCYP3A4NFKB1NPSR1 | |
| SCHEMBL10670321 | 0.94 | CA2 (0.58) | CA2TSHRCYP3A4NFKB1NPSR1 | |
| SCHEMBL1030692 | 0.94 | CA2 (0.58) | CA2TSHRCYP3A4NFKB1NPSR1 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 12 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| EP-2298714-B1 | COMPOSITION FOR FERROELECTRIC THIN FILM FORMATION, METHOD FOR FERROELECTRIC THIN FILM FORMATION, AND FERROELECTRIC THIN FILM FORMED BY THE METHOD | MITSUBISHI MATERIALS CORP (JP) | 2017-07-05 | — | — | EP | disclosed |
| US-9502636-B2 | Composition for ferroelectric thin film formation, method for forming ferroelectric thin film, and ferroelectric thin film formed by the method thereof | MITSUBISHI MATERIALS CORPORATION (JP) | 2016-11-22 | — | — | US | disclosed |
| US-9005358-B2 | Composition for ferroelectric thin film formation, method for forming ferroelectric thin film, and ferroelectric thin film formed by the method thereof | MITSUBISHI MATERIALS CORPORATION (JP) | 2015-04-14 | — | — | US | disclosed |
| US-20140349834-A1 | COMPOSITION FOR FERROELECTRIC THIN FILM FORMATION, METHOD FOR FORMING FERROELECTRIC THIN FILM, AND FERROELECTRIC THIN FILM FORMED BY THE METHOD THEREOF | MITSUBISHI MATERIALS CORP (JP) | 2014-11-27 | — | — | US | disclosed |
| US-20140349139-A1 | COMPOSITION FOR FERROELECTRIC THIN FILM FORMATION, METHOD FOR FORMING FERROELECTRIC THIN FILM, AND FERROELECTRIC THIN FILM FORMED BY THE METHOD THEREOF | MITSUBISHI MATERIALS CORPORATION (JP) | 2014-11-27 | — | — | US | disclosed |
| US-8859051-B2 | Composition for ferroelectric thin film formation, method for forming ferroelectric thin film and ferroelectric thin film formed by the method thereof | MITSUBISHI MATERIALS CORPORATION (JP) | 2014-10-14 | — | — | US | disclosed |
| US-8790538-B2 | Composition for ferroelectric thin film formation, method for forming ferroelectric thin film, and ferroelectric thin film formed by the method thereof | MITSUBISHI MATERIALS CORPORATION (JP) | 2014-07-29 | — | — | US | disclosed |
| US-20130295414-A1 | COMPOSITION FOR FERROELECTRIC THIN FILM FORMATION, METHOD FOR FORMING FERROELECTRIC THIN FILM, AND FERROELECTRIC THIN FILM FORMED BY THE METHOD THEREOF | MITSUBISHI MATERIALS CORP (JP) | 2013-11-07 | — | — | US | disclosed |
| US-20110177235-A1 | COMPOSITION FOR FERROELECTRIC THIN FILM FORMATION, METHOD FOR FORMING FERROELECTRIC THIN FILM, AND FERROELECTRIC THIN FILM FORMED BY THE METHOD THEREOF | MITSUBISHI MATERIALS CORPORATION (JP) | 2011-07-21 | — | — | US | disclosed |
| EP-2343268-A1 | Composition for ferroelectric thin film formation, method for forming ferroelectric thin film, and ferroelectric thin film formed by the method thereof | Mitsubishi Materials Corporation (JP) | 2011-07-13 | — | — | EP | disclosed |
| US-20110098173-A1 | Composition for ferroelectric thin film formation, method for forming ferroelectric thin film, and ferroelectric thin film formed by the method thereof | STMicroelectronics(Tours) SAS (FR) | 2011-04-28 | — | — | US | disclosed |
| EP-2298714-A1 | COMPOSITION FOR FERROELECTRIC THIN FILM FORMATION, METHOD FOR FERROELECTRIC THIN FILM FORMATION, AND FERROELECTRIC THIN FILM FORMED BY THE METHOD | Mitsubishi Materials Corporation (JP) | 2011-03-23 | — | — | EP | disclosed |